EDO DRAM MODULE DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

KMM374F410CS1-5

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1980 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

2

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

50 ns

KMM374F804CS1-6

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

606 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

603979776 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.006 Amp

60 ns

M53640405BY0-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

300 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.003 Amp

60 ns

KMM5364105BKG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

990 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

50 ns

KMM372F410BS-5

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1980 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

50 ns

M366F0803DJ2-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

536870912 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

60 ns

KMM332F203BS-L7

Samsung

EDO DRAM MODULE

COMMERCIAL

72

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

320 mA

2097152 words

YES

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

DUAL

1

R-XDMA-N72

3.6 V

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.0012 Amp

70 ns

M372F0883CJ0-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

900 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

603979776 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

60 ns

KMM332F400BS-L6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

4194304 words

YES

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

DUAL

1

R-XDMA-N72

3.6 V

Not Qualified

134217728 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.0024 Amp

60 ns

KMM5324004BKG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

KMM372F3200AS-7

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2440 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

36

Other Memory ICs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

59.69 mm

Not Qualified

2415919104 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

70 ns

M372E3280CJ0-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1720 mA

33554432 words

COMMON

5

5

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

5.5 V

50.8 mm

Not Qualified

2415919104 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

60 ns

KMM372F400BS-7

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1440 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

36

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

70 ns

M364E0803CJ0-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

880 mA

8388608 words

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

5.5 V

Not Qualified

536870912 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

60 ns

KMM5364105BK/BKG-7

Samsung

EDO DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

4194304 words

5

36

MICROELECTRONIC ASSEMBLY

4MX36

4M

SINGLE

1

R-XSMA-N72

Not Qualified

150994944 bit

70 ns

KMM5322204BW-7

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

284 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.05 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

70 ns

KMM5321204C2W-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

280 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

19.05 mm

Not Qualified

33554432 bit

.002 Amp

60 ns

KMM366F124AJ-6

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

600 mA

1048576 words

NO

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

60 ns

KMM53232004CKG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

976 mA

33554432 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX32

32M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

1073741824 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

50 ns

M53230800DW0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

736 mA

8388608 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

50 ns

M53640800DB0-60

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

918 mA

8388608 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX36

8M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

301989888 bit

.018 Amp

60 ns

KMM364E213BS-6

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

2097152 words

NO

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

1

R-XDMA-N168

5.5 V

25.4 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

60 ns

M53230400CB0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

4194304 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

M53230804CY0-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

224 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

60 ns

KMM374F883BS-6

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

990 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

31.75 mm

Not Qualified

603979776 bit

3 V

.0045 Amp

60 ns

KMM5328004CKG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

656 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

60 ns

KMM372F213CK-6

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

900 mA

2097152 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

2MX72

2M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

150994944 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

60 ns

M372F0410CB0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1980 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

50 ns

KMM5368005BK/BKG-6

Samsung

EDO DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

8388608 words

5

36

MICROELECTRONIC ASSEMBLY

8MX36

8M

SINGLE

1

R-XSMA-N72

Not Qualified

301989888 bit

60 ns

M372F0410CZ0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

168

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

4194304 words

3.3

72

MICROELECTRONIC ASSEMBLY

70 Cel

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

301989888 bit

3 V

50 ns

KMM5364005CSW-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

300 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

DUAL

1

R-XDMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.003 Amp

60 ns

KMM374F3200BK1-6

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2124 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

41.275 mm

Not Qualified

2415919104 bit

3 V

RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH

.018 Amp

60 ns

M53640410CB0-60

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

900 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

150994944 bit

.009 Amp

60 ns

KMM5322204AW/AWG-6

Samsung

EDO DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

2097152 words

5

32

MICROELECTRONIC ASSEMBLY

2MX32

2M

SINGLE

1

R-XSMA-N72

Not Qualified

67108864 bit

60 ns

KMM5368005BK-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

918 mA

8388608 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX36

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

301989888 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.018 Amp

50 ns

M466F0404AF1-L600

Samsung

EDO DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

560 mA

4194304 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

R-PDMA-N144

Not Qualified

268435456 bit

.0012 Amp

60 ns

KMM5328004BK-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

816 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

60 ns

KMM372F1680AS-7

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2340 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

31.75 mm

Not Qualified

1207959552 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

70 ns

KMM374F3280CK1-5

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1998 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

2

R-XDMA-N168

3.6 V

41.275 mm

Not Qualified

2415919104 bit

3 V

.018 Amp

50 ns

KMM5321204C2WG

Samsung

EDO DRAM MODULE

COMMERCIAL

72

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

32

MICROELECTRONIC ASSEMBLY

70 Cel

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

60 ns

KMM366F1680AK-5

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2400 mA

16777216 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

1073741824 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

KMM5328004BSWG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

244 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

50 ns

KMM372F1600AK-6

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2520 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

31.75 mm

Not Qualified

1207959552 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

60 ns

KMM5321204C2W-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

300 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

19.05 mm

Not Qualified

33554432 bit

.002 Amp

50 ns

KMM366F124AJ-7

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

560 mA

1048576 words

NO

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

25.4 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

70 ns

M372F1680CJ0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1980 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

31.75 mm

Not Qualified

1207959552 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.03 Amp

50 ns

KMM374F1600AK-5

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2700 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

36

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

1207959552 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

50 ns

KMM374F1600CK1-6

Samsung

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1800 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

2

R-XDMA-N168

3.6 V

Not Qualified

1207959552 bit

3 V

.009 Amp

60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.