EDO DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT8LD264G-60BN	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			3.3		64	MICROELECTRONIC ASSEMBLY		32			70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	134217728 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH				60 ns
MT4LDT164HG-7XL	Micron Technology	EDO DRAM MODULE	COMMERCIAL	144	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		620 mA	1048576 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		DUAL		R-PDMA-N144			28.194 mm		Not Qualified	67108864 bit				.0006 Amp		70 ns
MT4D51232G-6XTR	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72		512	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	512KX32	512K		SINGLE	1	R-XSMA-N72	1	5.5 V			Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
MT9LD272AG-52B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1260 mA	2097152 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M		DUAL	1	R-XDMA-N168	1	3.47 V	25.654 mm		Not Qualified	150994944 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH		.0045 Amp		52 ns
MT4D232M-52B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	560 mA	2097152 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		SINGLE	1	R-XSMA-N72	1	5.25 V			Not Qualified	67108864 bit	4.75 V	RAS ONLY/CAS BEFORE RAS REFRESH		.012 Amp		52 ns
MT2DT132M-60B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	320 mA	1048576 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72	1	5.25 V	20.574 mm		Not Qualified	33554432 bit	4.75 V	RAS ONLY/CAS BEFORE RAS REFRESH		.011 Amp		60 ns
MT9LD272G-52B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			3.3		72	MICROELECTRONIC ASSEMBLY		32			70 Cel	3-STATE	2MX72	2M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	150994944 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH				52 ns
MT18LDT472G-7XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1980 mA	4194304 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	1	R-XDMA-N168	1	3.6 V	25.654 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		.0027 Amp		70 ns
MT4D232DM-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	372 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		SINGLE	1	R-XSMA-N72	1	5.5 V	20.574 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.012 Amp		50 ns
MT8LD264G-52B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			3.3		64	MICROELECTRONIC ASSEMBLY		32			70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	134217728 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH				52 ns
MT8D132G-6XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words	YES		5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				60 ns
MT16LD464G-5BN	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2400 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH		.008 Amp		52 ns
MT18LDT1672G-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2880 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V	50.8 mm		Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.009 Amp		60 ns
MT12LDT872G-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	886 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		DUAL	1	R-XDMA-N168	1	3.6 V			Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS /HIDDEN REFRESH		.069 Amp		50 ns
MT4D232G-60B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	520 mA	2097152 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		SINGLE	1	R-XSMA-N72	1	5.25 V			Not Qualified	67108864 bit	4.75 V	RAS ONLY/CAS BEFORE RAS REFRESH		.012 Amp		60 ns
MT16LD232G-6XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	648 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		SINGLE	1	R-XSMA-N72	1	3.6 V	25.654 mm		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		.0016 Amp		60 ns
MT18LD1672AG-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	3060 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.009 Amp		50 ns
MT2D132M-70B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72		5.25 V			Not Qualified	33554432 bit	4.75 V	RAS ONLY/CAS BEFORE RAS REFRESH				70 ns
MT4LD164G-70B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			3.3		64	MICROELECTRONIC ASSEMBLY		32			70 Cel	3-STATE	1MX64	1M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	67108864 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH				70 ns
MT16LD464G-7BN	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2080 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH		.008 Amp		70 ns
MT2D132G-6B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72		5.25 V			Not Qualified	33554432 bit	4.75 V	RAS ONLY/CAS BEFORE RAS REFRESH				60 ns
MT4LDT164G-60BN	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			3.3		64	MICROELECTRONIC ASSEMBLY		32			70 Cel	3-STATE	1MX64	1M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	67108864 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH				60 ns
MT16D232G-7XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words	YES		5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M		SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				70 ns
MT4D232DG-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	372 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		SINGLE	1	R-XSMA-N72	1	5.5 V	20.574 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.012 Amp		50 ns
MT2LDT432HG-6XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	330 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M		DUAL	1	R-XDMA-N72	1	3.6 V	2.54 mm	25.4 mm	Not Qualified	134217728 bit	3 V	CAS BEFORE RAS REFRESH		.001 Amp	59.69 mm	60 ns
MT4DT232DM-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	352 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		SINGLE	1	R-XSMA-N72	1	5.5 V	20.574 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.012 Amp		60 ns
MT16LD464G-7B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2080 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH		.008 Amp		70 ns
MT18LD1672AG-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2880 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168	1	3.6 V			Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.009 Amp		60 ns
MT18LDT472G-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2160 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		DUAL	1	R-XDMA-N168	1	3.6 V	25.654 mm		Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.009 Amp		60 ns
MT18LD1672G-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2880 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V	27.94 mm		Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.009 Amp		60 ns
MT4DT232G-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel		2MX32	2M		SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				50 ns
MT2LDT132HG-6XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	340 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M		DUAL	1	R-XDMA-N72	1	3.6 V	25.654 mm		Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		.0003 Amp		60 ns
MT9D436M-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1080 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M		SINGLE	1	R-XSMA-N72	1	5.5 V			Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.024 Amp		60 ns
MT8LDT864AG-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	704 mA	8388608 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	Gold (Au)	DUAL	1	R-XDMA-N168		3.6 V			Not Qualified	536870912 bit	3 V	CAS BEFORE RAS REFRESH	e4	.004 Amp		50 ns
MT2DT132G-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	340 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72	1	5.5 V	20.574 mm		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.011 Amp		60 ns
MT8LDT264HG-7XL	Micron Technology	EDO DRAM MODULE	COMMERCIAL	144	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		628 mA	2097152 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		DUAL		R-PDMA-N144					Not Qualified	134217728 bit				.0012 Amp		70 ns
MT8LDT264G-7XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N168	1	3.6 V	25.654 mm		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		.0012 Amp		70 ns
MT2D25632G-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	390 mA	262144 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	256KX32	256K		SINGLE	1	R-XSMA-N72	1	5.25 V			Not Qualified	8388608 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.002 Amp		50 ns
MT2DT132G-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72	1	5.5 V	20.574 mm		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.011 Amp		50 ns
MT2LDT132HG-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	1048576 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M		DUAL	1	R-XDMA-N72	1	3.6 V	25.654 mm		Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.001 Amp		50 ns
MT4LD164G-5B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	760 mA	1048576 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	67108864 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH		.002 Amp		52 ns
MT2D132G-7B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72		5.25 V			Not Qualified	33554432 bit	4.75 V	RAS ONLY/CAS BEFORE RAS REFRESH				70 ns
MT36LD3272FG-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2775 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168	1	3.6 V	50.8 mm		Not Qualified	2415919104 bit	3 V	CAS BEFORE RAS REFRESH		.018 Amp		50 ns
MT4LD164G-7BN	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	640 mA	1048576 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	67108864 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH		.002 Amp		70 ns
MT8LD264G-70B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			3.3		64	MICROELECTRONIC ASSEMBLY		32			70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N168		3.47 V			Not Qualified	134217728 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH				70 ns
MT9LD272G-6BN	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1260 mA	2097152 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M		DUAL	1	R-XDMA-N168	1	3.47 V			Not Qualified	150994944 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH		.0045 Amp		60 ns
MT16LD232M-7X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	568 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		SINGLE	1	R-XSMA-N72	1	3.6 V	25.654 mm		Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		70 ns
MT8D132M-7XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words	YES		5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72		5.5 V			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.