Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
620 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
R-PDMA-N144 |
28.194 mm |
Not Qualified |
67108864 bit |
.002 Amp |
70 ns |
||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
100 |
DIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
342 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM100 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-XDMA-N100 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
.002 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
33554432 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0008 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1170 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.47 V |
Not Qualified |
150994944 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.0045 Amp |
70 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1200 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.47 V |
Not Qualified |
134217728 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.004 Amp |
52 ns |
||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1485 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
Not Qualified |
603979776 bit |
3 V |
CAS BEFORE RAS REFRESH |
.0045 Amp |
60 ns |
||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1040 mA |
4194304 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.25 V |
Not Qualified |
134217728 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.014 Amp |
52 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
880 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
134217728 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0012 Amp |
50 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1019 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.048 Amp |
50 ns |
||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2880 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
31.877 mm |
Not Qualified |
1207959552 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
50 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.47 V |
Not Qualified |
67108864 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.002 Amp |
70 ns |
||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
36 |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.47 V |
Not Qualified |
301989888 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
60 ns |
||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1440 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
Not Qualified |
301989888 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
880 mA |
4194304 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
134217728 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0012 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2340 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
36 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.47 V |
Not Qualified |
301989888 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.009 Amp |
70 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2097152 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
2MX36 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
75497472 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
880 mA |
4194304 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
134217728 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0012 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1776 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
38.354 mm |
Not Qualified |
536870912 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
50 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
480 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0006 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
32 |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.47 V |
Not Qualified |
268435456 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
52 ns |
||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
320 mA |
1048576 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.25 V |
20.574 mm |
Not Qualified |
33554432 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.011 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1118 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
301989888 bit |
.048 Amp |
60 ns |
||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
100 |
DIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
362 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM100 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N100 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
50 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
144 |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
YES |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
1 |
3.6 V |
Not Qualified |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
60 ns |
|||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
680 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
R-PDMA-N144 |
28.194 mm |
Not Qualified |
67108864 bit |
.0006 Amp |
60 ns |
||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2775 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
41.91 mm |
Not Qualified |
2415919104 bit |
3 V |
CAS BEFORE RAS REFRESH |
.018 Amp |
50 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
32 |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.47 V |
Not Qualified |
67108864 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
70 ns |
||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2097152 words |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
32 |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.47 V |
Not Qualified |
150994944 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
70 ns |
||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
880 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
352 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1080 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
150994944 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.0045 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
324 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
524288 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.25 V |
Not Qualified |
16777216 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
50 ns |
|||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
3060 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
50.8 mm |
Not Qualified |
1207959552 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
50 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
888 mA |
8388608 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2955 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
41.91 mm |
Not Qualified |
2415919104 bit |
3 V |
CAS BEFORE RAS REFRESH |
.018 Amp |
60 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
900 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
25.654 mm |
Not Qualified |
150994944 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.0045 Amp |
60 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2898 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
50.8 mm |
Not Qualified |
2415919104 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1800 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
301989888 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
50 ns |
||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1760 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
620 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX64 |
1M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
YES |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
70 ns |
|||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2097152 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.25 V |
Not Qualified |
67108864 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
70 ns |
||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1170 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
150994944 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0013 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
32 |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.47 V |
Not Qualified |
268435456 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
60 ns |
||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
810 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
150994944 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.0045 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1920 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
32 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
1 |
3.47 V |
25.654 mm |
Not Qualified |
268435456 bit |
3.13 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.008 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
440 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0006 Amp |
70 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.