EDO DRAM MODULE DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

MT16LD464G-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1920 mA

4194304 words

NO

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

25.654 mm

Not Qualified

268435456 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

60 ns

MT8LDT432HG-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

880 mA

4194304 words

NO

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

DUAL

1

R-XDMA-N72

1

3.6 V

25.654 mm

Not Qualified

134217728 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

50 ns

MT4D51232M-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

394 mA

524288 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

512KX32

512K

0 Cel

SINGLE

1

R-XSMA-N72

1

5.25 V

Not Qualified

16777216 bit

4.75 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

50 ns

MT8LDT264HG-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

144

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

688 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

TIN LEAD

DUAL

1

R-XDMA-N144

3.6 V

Not Qualified

134217728 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.004 Amp

60 ns

MT8LD264G-5BN

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1200 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

1

R-XDMA-N168

3.47 V

Not Qualified

134217728 bit

3.13 V

RAS ONLY/CAS BEFORE RAS REFRESH

.004 Amp

52 ns

MT16LD464G-6BN

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2240 mA

4194304 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

1

R-XDMA-N168

3.47 V

Not Qualified

268435456 bit

3.13 V

RAS ONLY/CAS BEFORE RAS REFRESH

.008 Amp

60 ns

MT4LD164G-6B

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

1048576 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

1

R-XDMA-N168

3.47 V

Not Qualified

67108864 bit

3.13 V

RAS ONLY/CAS BEFORE RAS REFRESH

.002 Amp

60 ns

MT36LD872G-7

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1710 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

32

Other Memory ICs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

38.354 mm

Not Qualified

603979776 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.018 Amp

70 ns

MT8LDT864HG-6XS

Micron Technology

EDO DRAM MODULE

COMMERCIAL

144

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1320 mA

8388608 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N144

1

3.6 V

Not Qualified

536870912 bit

3 V

CAS BEFORE RAS REFRESH/SELF REFRESH

.004 Amp

60 ns

MT18LDT1672FG-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2160 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

50.8 mm

Not Qualified

1207959552 bit

3 V

CAS BEFORE RAS REFRESH

.009 Amp

60 ns

MT36LDT3272G-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

3135 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

TIN LEAD

DUAL

1

R-XDMA-N168

3.6 V

50.8 mm

Not Qualified

2415919104 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.018 Amp

50 ns

MT16LD832M-7X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

888 mA

8388608 words

NO

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

1

3.6 V

25.654 mm

Not Qualified

268435456 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

70 ns

MT2DT132G-70B

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

32

MICROELECTRONIC ASSEMBLY

16

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.25 V

Not Qualified

33554432 bit

4.75 V

RAS ONLY/CAS BEFORE RAS REFRESH

70 ns

MT9LD872FG-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1395 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

Not Qualified

603979776 bit

3 V

CAS BEFORE RAS REFRESH

.0045 Amp

50 ns

MT12LDT872AG-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

SYNCHRONOUS

886 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

25.4 mm

Not Qualified

603979776 bit

3 V

CAS BEFORE RAS REFRESH

.006 Amp

50 ns

MT8D432M-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

880 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

1

5.5 V

25.654 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.014 Amp

50 ns

MT9LD872AG-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1485 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

TIN LEAD

DUAL

1

R-XDMA-N168

3.6 V

32.004 mm

Not Qualified

603979776 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0045 Amp

60 ns

MT4LD232G-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

480 mA

2097152 words

NO

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

1

3.6 V

25.654 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

60 ns

MT8D264G-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1040 mA

2097152 words

NO

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

1

R-XDMA-N168

1

5.5 V

30.099 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.014 Amp

60 ns

MT16LDT464G-6XS

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1920 mA

4194304 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

25.654 mm

Not Qualified

268435456 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.0024 Amp

60 ns

MT2DT132M-6B

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

32

MICROELECTRONIC ASSEMBLY

16

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.25 V

Not Qualified

33554432 bit

4.75 V

RAS ONLY/CAS BEFORE RAS REFRESH

60 ns

MT18LDT472G-6XS

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2160 mA

4194304 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

36

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

25.654 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.0027 Amp

60 ns

MT2D132M-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

340 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

1

5.5 V

20.574 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.011 Amp

60 ns

MT18LD472FG-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1620 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

60 ns

MT8LD264AG-7

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

960 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

Not Qualified

134217728 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

70 ns

MT8LDT264HG-7X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

144

DIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

628 mA

2097152 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

R-PDMA-N144

Not Qualified

134217728 bit

.004 Amp

70 ns

MT36LD3272FG-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2235 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

50.8 mm

Not Qualified

2415919104 bit

3 V

CAS BEFORE RAS REFRESH

.018 Amp

60 ns

MT8D432G-60B

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

960 mA

4194304 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

TIN LEAD

SINGLE

1

R-XSMA-N72

5.25 V

Not Qualified

134217728 bit

4.75 V

RAS ONLY/CAS BEFORE RAS REFRESH

e0

.014 Amp

60 ns

MT6LDT472AG-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

SYNCHRONOUS

820 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

25.4 mm

Not Qualified

301989888 bit

3 V

CAS BEFORE RAS REFRESH

.003 Amp

60 ns

MT18LD472G-7X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1620 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

32

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

25.654 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

70 ns

MT4LDT232HG-6XL

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

DIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

344 mA

2097152 words

NO

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

DUAL

1

R-XDMA-N72

1

3.6 V

25.654 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.0006 Amp

60 ns

MT16LDT464G-7XS

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1760 mA

4194304 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

4MX64

4M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

25.654 mm

Not Qualified

268435456 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.0024 Amp

70 ns

MT4LDT164G-70BN

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

3.3

64

MICROELECTRONIC ASSEMBLY

32

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

1

R-XDMA-N168

3.47 V

Not Qualified

67108864 bit

3.13 V

RAS ONLY/CAS BEFORE RAS REFRESH

70 ns

MT8LDT264G-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1040 mA

2097152 words

NO

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

2MX64

2M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

25.654 mm

Not Qualified

134217728 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

60 ns

MT9LD272AG-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

990 mA

2097152 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

2MX72

2M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

25.654 mm

Not Qualified

150994944 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.0045 Amp

50 ns

MT4LD164G-52BN

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

3.3

64

MICROELECTRONIC ASSEMBLY

32

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

1

R-XDMA-N168

3.47 V

Not Qualified

67108864 bit

3.13 V

RAS ONLY/CAS BEFORE RAS REFRESH

52 ns

MT9LD272G-7B

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1170 mA

2097152 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

2MX72

2M

0 Cel

DUAL

1

R-XDMA-N168

1

3.47 V

Not Qualified

150994944 bit

3.13 V

RAS ONLY/CAS BEFORE RAS REFRESH

.0045 Amp

70 ns

MT18LD472G-6X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1800 mA

4194304 words

NO

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX72

4M

0 Cel

TIN LEAD

DUAL

1

R-XDMA-N168

3.6 V

25.654 mm

Not Qualified

301989888 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.009 Amp

60 ns

MT4LDT164G-52BN

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

3.3

64

MICROELECTRONIC ASSEMBLY

32

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

1

R-XDMA-N168

3.47 V

Not Qualified

67108864 bit

3.13 V

RAS ONLY/CAS BEFORE RAS REFRESH

52 ns

MT16LD832M-7XS

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

888 mA

8388608 words

YES

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

1

3.6 V

25.654 mm

Not Qualified

268435456 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.0024 Amp

70 ns

MT2DT132G-7X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

310 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

1

5.5 V

20.574 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.011 Amp

70 ns

MT9LDT872G-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1575 mA

8388608 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

8MX72

8M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

Not Qualified

603979776 bit

3 V

CAS BEFORE RAS REFRESH

.0045 Amp

50 ns

MT4LDT832HG-5XS

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

352 mA

8388608 words

YES

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

DUAL

1

R-XDMA-N72

1

3.6 V

2.54 mm

25.4 mm

Not Qualified

268435456 bit

3 V

CAS BEFORE RAS REFRESH

.002 Amp

59.69 mm

50 ns

MT16D232G-6XS

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

YES

5

32

MICROELECTRONIC ASSEMBLY

16

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

60 ns

MT18LD472G-70B

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

4194304 words

3.3

72

MICROELECTRONIC ASSEMBLY

36

70 Cel

3-STATE

4MX72

4M

0 Cel

DUAL

1

R-XDMA-N168

3.47 V

Not Qualified

301989888 bit

3.13 V

RAS ONLY/CAS BEFORE RAS REFRESH

70 ns

MT2DT132M-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

360 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

1

5.5 V

20.574 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.011 Amp

50 ns

MT36LDT3272FG-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2775 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

1

3.6 V

50.8 mm

Not Qualified

2415919104 bit

3 V

CAS BEFORE RAS REFRESH

.018 Amp

50 ns

MT4LDT832HG-5X

Micron Technology

EDO DRAM MODULE

COMMERCIAL

72

DIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

352 mA

8388608 words

NO

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

DUAL

1

R-XDMA-N72

1

3.6 V

2.54 mm

25.4 mm

Not Qualified

268435456 bit

3 V

CAS BEFORE RAS REFRESH

.002 Amp

59.69 mm

50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.