FAST PAGE DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS426400P-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	17.14 mm	60 ns
LC321664BT-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		80 ns
LC322270T-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	131072 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K		DUAL		R-PDSO-G40				Not Qualified	2097152 bit						.001 Amp		80 ns
LC32464P-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		70 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K		DUAL		R-PDIP-T18				Not Qualified	262144 bit						.001 Amp		80 ns
LC321664BM-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		70 ns
LC321664BJ-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-J40				Not Qualified	1048576 bit						.001 Amp		70 ns
LC322270J-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		125 mA	131072 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	128KX16	128K		DUAL		R-PDSO-J40				Not Qualified	2097152 bit						.001 Amp		70 ns
LC321664BT-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		70 ns
LC32464M-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	24	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		70 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOP24,.4	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K		DUAL		R-PDSO-G24				Not Qualified	262144 bit						.001 Amp		80 ns
LC321664BM-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOP40,.56	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-G40				Not Qualified	1048576 bit						.001 Amp		80 ns
LC321664BJ-80	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K		DUAL		R-PDSO-J40				Not Qualified	1048576 bit						.001 Amp		80 ns
LC322270T-70	Onsemi	FAST PAGE DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		125 mA	131072 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	128KX16	128K		DUAL		R-PDSO-G40				Not Qualified	2097152 bit						.001 Amp		70 ns
MCM54100AZ70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		100 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit						.001 Amp		70 ns
MCM5L4100AN70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.0002 Amp		70 ns
MCM54100AT60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.001 Amp		60 ns
MCM5L4100AT80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.0002 Amp		80 ns
MCM54100AT60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.001 Amp		60 ns
MCM54100AN60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.001 Amp		60 ns
MCM5L4100AT70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.0002 Amp		70 ns
MCM54100AT70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.001 Amp		70 ns
MCM5L4100AN80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.0002 Amp		80 ns
MCM5L4100AT60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.0002 Amp		60 ns
MCM54100AN70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.001 Amp		70 ns
MCM54100AT70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.001 Amp		70 ns
MCM54100AN80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.001 Amp		80 ns
MCM5L4100AT80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.0002 Amp		80 ns
MCM5L4100AT60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.0002 Amp		60 ns
MCM54100AZ80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		85 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit						.001 Amp		80 ns
MCM5L4100AN60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.0002 Amp		60 ns
MCM5L4100AZ80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		85 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit						.0002 Amp		80 ns
MCM54100AT80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.001 Amp		80 ns
MCM5L4100AZ60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		120 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit						.0002 Amp		60 ns
MCM54100AN80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.001 Amp		80 ns
MCM54100AN70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.001 Amp		70 ns
MCM54100AZ60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		120 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit						.001 Amp		60 ns
MCM5L4100AT70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.0002 Amp		70 ns
MCM54100AN60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.001 Amp		60 ns
MCM54100AT80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20				Not Qualified	4194304 bit						.001 Amp		80 ns
MCM5L4100AZ70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		100 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit						.0002 Amp		70 ns
MCM5L4100AN70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.0002 Amp		70 ns
MCM5L4100AN60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.0002 Amp		60 ns
MCM5L4100AN80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-J20				Not Qualified	4194304 bit						.0002 Amp		80 ns
HYB514256AL-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		80 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20				Not Qualified	1048576 bit			e0			.0003 Amp		70 ns
HYB514400BJL-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.75 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp	17.27 mm	60 ns
HYB3165400T-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	34	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	140 mA	16777216 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP34,.56	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	TIN LEAD	DUAL	1	R-PDSO-G34	3.6 V	1.2 mm	12.7 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.0002 Amp	22.25 mm	50 ns
HYB511000AJ-10	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	1048576 bit			e0					100 ns
HYB3164800AT-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	8388608 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	20.95 mm	50 ns
HYB314400BJL-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	TIN LEAD	DUAL	1	R-PDSO-J20	3.6 V	3.75 mm	7.75 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp	17.27 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.