FAST PAGE DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
5962-9061702MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	DUAL	1	R-XDSO-N20	5.5 V	2.54 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.145 mm	120 ns
TMS45160P-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K	0 Cel	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH				26.035 mm	100 ns
SMJ416400-10FNC	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel	DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				19.685 mm	100 ns
SMJ44C256-12FQL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	DUAL	1	R-CDSO-N20	5.5 V	2.34 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.145 mm	120 ns
TMS426100P-10DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words	YES		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.57 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH				17.145 mm	100 ns
TMS418160-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	180 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	27.305 mm	70 ns
5962-9062201MVX	Texas Instruments	FAST PAGE DRAM	MILITARY	16	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	DUAL	1	R-CDIP-T16	5.5 V	3.93 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				20.32 mm	120 ns
TMS426400AP-50DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	90 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.00015 Amp	17.14 mm	50 ns
SMJ4C1024-10SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH	NOT SPECIFIED	NOT SPECIFIED	.003 Amp	26.67 mm	100 ns
TMS46100P-10SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words	YES		3.3		1	IN-LINE			1.27 mm	70 Cel		4MX1	4M	0 Cel	ZIG-ZAG	1	R-PZIP-T20	3.6 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					100 ns
SM4C1024-12HKM	Texas Instruments	FAST PAGE DRAM	MILITARY			512		CERAMIC				CMOS					1048576 words		SEPARATE	5	5	1			DRAMs		125 Cel	3-STATE	1MX1	1M	-55 Cel							Not Qualified	1048576 bit							120 ns
TMS44C256-12N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	55 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	DUAL	1	R-PDIP-T20	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	24.325 mm	120 ns
TMS426400PDGA-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS/SELF REFRESH				17.14 mm	70 ns
TMS427400-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	100 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.14 mm	60 ns
TMS418160P-70DC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words	YES		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH				20.95 mm	70 ns
TMS417400P-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.145 mm	80 ns
TMS416100-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	18.415 mm	60 ns
SMJ44400-12SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel	DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	26.67 mm	120 ns
TMS427400P-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	17.14 mm	60 ns
TMS46460P-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	17.145 mm	60 ns
TMS44400DGA-60	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		1MX4	1M	0 Cel	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS				17.14 mm	60 ns
TMS426400PDGA-60	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS/SELF REFRESH				17.14 mm	60 ns
TMS45160S-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	160 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE ACCESS	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	26.035 mm	70 ns
TMS426400-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	60 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.145 mm	70 ns
TMS426100P-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words	YES		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.57 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH				17.145 mm	70 ns
TMS417400P-70DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.14 mm	70 ns
TMS44165-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	140 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	26.035 mm	60 ns
TMS46400-10DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words			3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		1MX4	1M	0 Cel	DUAL	1	R-PDSO-G20	3.6 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				17.14 mm	100 ns
5962-9062201MXX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		4194304 words			5		1	FLATPACK			1.27 mm	125 Cel		4MX1	4M	-55 Cel	DUAL	1	R-XDFP-F20	5.5 V	2.54 mm	12.45 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.78 mm	120 ns
5962-9061701MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	55 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	DUAL	1	R-XDSO-N20	5.5 V	2.54 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.145 mm	150 ns
TMS426100-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words			3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				17.14 mm	80 ns
TMS416160-60DC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				20.95 mm	60 ns
TMS46400P-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	LSOP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	50 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, LOW PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-G20	3.6 V	1.27 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.14 mm	80 ns
SMJ416100-80HKB	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		16777216 words			5		1	FLATPACK			1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel	DUAL	1	R-CDFP-F28	5.5 V	3.32 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				19.655 mm	80 ns
TMS427400PDGA-80	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS/SELF REFRESH				17.14 mm	80 ns
SMJ44100-10HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	75 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	DUAL	1	R-CDSO-J20	5.5 V	3.56 mm	8.382 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.145 mm	100 ns
TMS416400-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	60 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.14 mm	80 ns
TMS426160-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	27.305 mm	70 ns
SMJ416400-60HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		4194304 words			5		4	FLATPACK			1.27 mm	125 Cel		4MX4	4M	-55 Cel	DUAL	1	R-CDFP-F28	5.5 V	3.32 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				19.685 mm	60 ns
5962-9061704MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	80 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	DUAL	1	R-XDSO-N20	5.5 V	2.54 mm	8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.145 mm	80 ns
TMS44100P-70DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	LSOP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	90 mA	4194304 words	YES	SEPARATE	5	5	1	SMALL OUTLINE, LOW PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	1	R-PDSO-G20	5.5 V	1.27 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.14 mm	70 ns
5962-9084701MNA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel	ZIG-ZAG	1	R-XZIP-T20	5.5 V	11.56 mm	2.92 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	26.67 mm	120 ns
SMJ416160-70HKDM	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	MOS	38535Q/M;38534H;883B	FLAT	ASYNCHRONOUS	80 mA	1048576 words	NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel	DUAL	1	R-CDFP-F50	5.5 V	3.55 mm	16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	21 mm	70 ns
TMS426400-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	50 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.145 mm	80 ns
TMS417800P-80DE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		2097152 words	YES		5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M	0 Cel	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH				20.95 mm	80 ns
SMJ417100-70HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		16777216 words			5		1	FLATPACK			1.27 mm	125 Cel		16MX1	16M	-55 Cel	DUAL	1	R-CDFP-F28	5.5 V	3.32 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				19.685 mm	70 ns
TMS44C256-15FML	Texas Instruments	FAST PAGE DRAM	COMMERCIAL		QCCJ	512		PLASTIC/EPOXY		YES		CMOS		J BEND		55 mA	262144 words		COMMON	5	5	4	CHIP CARRIER	LDCC(UNSPEC)	DRAMs		70 Cel	3-STATE	256KX4	256K	0 Cel	QUAD						Not Qualified	1048576 bit			NOT SPECIFIED	NOT SPECIFIED	.003 Amp		150 ns
SMJ417400-10FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		4MX4	4M	-55 Cel	DUAL	1	R-CDSO-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				19.685 mm	100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.