Texas Instruments - TMS44C256-15FML

  1. Home
  2. Texas Instruments - TMS44C256-15FML
TMS44C256-15FML by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TMS44C256-15FML
Description FAST PAGE DRAM; Temperature Grade: COMMERCIAL; Package Code: QCCJ; Refresh Cycles: 512; Surface Mount: YES; Memory Width: 4;
Datasheet TMS44C256-15FML Datasheet
In Stock3,998
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .003 Amp
Organization: 256KX4
Output Characteristics: 3-STATE
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 55 mA
No. of Words: 262144 words
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
Technology: CMOS
Terminal Form: J BEND
Maximum Operating Temperature: 70 Cel
Package Code: QCCJ
Input/Output Type: COMMON
Memory Density: 1048576 bit
Memory IC Type: FAST PAGE DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 4
Qualification: Not Qualified
Package Equivalence Code: LDCC(UNSPEC)
Refresh Cycles: 512
Maximum Access Time: 150 ns
No. of Words Code: 256K
Nominal Supply Voltage / Vsup (V): 5
Peak Reflow Temperature (C): NOT SPECIFIED
Temperature Grade: COMMERCIAL
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,998 - -

Popular Products

Category Top Products

KMM591000B-8 by Samsung

KMM591000B-8

Samsung

Samsung's KMM591000B-8 is a 1MX9 DRAM module with 1048576 words, 9437184 bit memory density, and 80 ns max access time. It operates in fast page access mode at a nominal voltage of 5V. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
AS4C32M16SB-7TCN by Alliance Memory

AS4C32M16SB-7TCN

Alliance Memory

Alliance Memory's AS4C32M16SB-7TCN is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85°C. Featuring self-refresh and four bank page burst access mode, it offers 33554432 words memory density for various commercial applications.
K4T1G164QF-BCE7 by Samsung

K4T1G164QF-BCE7

Samsung

Samsung's K4T1G164QF-BCE7 DDR2 DRAM features 64MX16 organization, 400 MHz clock frequency, and 1073741824 bit memory density. Ideal for applications requiring high-speed data processing and storage in devices like computers and servers.
MT46H64M16LFBF-5AIT:B by Micron Technology

MT46H64M16LFBF-5AIT:B

Micron Technology

Micron Technology's MT46H64M16LFBF-5AIT:B is a 64MX16 DDR1 DRAM with 67108864 words. It operates at 200 MHz, has a memory density of 1073741824 bit, and supports a max clock frequency of 200 MHz. Ideal for industrial applications requiring fast data access and high memory capacity.
K4W1G1646G-BC11 by Samsung

K4W1G1646G-BC11

Samsung

Samsung's K4W1G1646G-BC11 DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and large memory capacity.
AS4C512M8D4-83BIN by Alliance Memory

AS4C512M8D4-83BIN

Alliance Memory

Alliance Memory's AS4C512M8D4-83BIN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT48LC8M16A2P-6A:L by Micron Technology

MT48LC8M16A2P-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.
MTA8ATF1G64HZ-3G2J1 by Micron Technology

MTA8ATF1G64HZ-3G2J1

Micron Technology

Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.
MT46H128M32L2MC-6WT:B by Micron Technology

MT46H128M32L2MC-6WT:B

Micron Technology

Micron Technology's MT46H128M32L2MC-6WT:B is a 128MX32 DDR1 DRAM with 240 terminals and operates at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring fast access times and high memory density.
MT48LC4M32B2B5-7:G by Micron Technology

MT48LC4M32B2B5-7:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
MT48LC4M16A2P-6AIT:J by Micron Technology

MT48LC4M16A2P-6AIT:J

Micron Technology

Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.
W9825G6KH-6I by Winbond Electronics

W9825G6KH-6I

Winbond Electronics

W9825G6KH-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it features self-refresh and offers a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
KVR16LN11/4 by Kingston Technology Company

KVR16LN11/4

Kingston Technology Company

Kingston's KVR16LN11/4 DDR DRAM module operates synchronously at 1.35V, with 512MX64 organization and 64-bit memory width. Ideal for applications requiring high memory density and multi-bank page burst access mode in microelectronic assemblies.
MT53E2G32D4DT-046AAT:A by Micron Technology

MT53E2G32D4DT-046AAT:A

Micron Technology

LPDDR4 DRAM;
S70KS1282GABHB030 by Cypress Semiconductor

S70KS1282GABHB030

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Maximum Supply Voltage (Vsup): 2 V;
IS46TR16640CL-107MBLA2 by Integrated Silicon Solution

IS46TR16640CL-107MBLA2

Integrated Silicon Solution

IS46TR16640CL-107MBLA2 by Integrated Silicon Solution is a 64MX16 DDR3 DRAM with 1.35V supply voltage, operating in synchronous mode with self-refresh capability. It features a memory density of 1073741824 bits and is suitable for industrial applications requiring multi-bank page burst access mode at temperatures ranging from -40 to 105°C.
MT40A512M16LY-062EIT:ETR by Micron Technology

MT40A512M16LY-062EIT:ETR

Micron Technology

Micron Technology's MT40A512M16LY-062EIT:ETR is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. This thin-profile memory module is suitable for applications requiring high-speed data processing in a compact form factor.
MT41J128M16JT-093:K by Alliance Memory

MT41J128M16JT-093:K

Alliance Memory

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
W631GG6NB12I by Winbond Electronics

W631GG6NB12I

Winbond Electronics

W631GG6NB12I by Winbond Electronics is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz clock frequency. It features a 1.5V nominal voltage and offers a memory density of 1073741824 bits. This industrial-grade DRAM is suitable for applications requiring high-speed synchronous memory operations.
K4H561638N-LCCC by Samsung

K4H561638N-LCCC

Samsung

Samsung's K4H561638N-LCCC DDR1 DRAM features 16MX16 organization, 200 MHz clock frequency, and 70°C max operating temp. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.