FAST PAGE DRAM MODULE DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Maximum Access Time
KMM5361203WG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
M53210410CB0-60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		800 mA	4194304 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE		R-PSMA-N72			Not Qualified	134217728 bit			.008 Amp	60 ns
KMM372V120CT-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	1048576 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	1MX72	1M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	75497472 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.05 Amp	70 ns
KMM332V213AT-L6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	400 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	DUAL	1	R-XDMA-N72	3.6 V	25.4 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0012 Amp	60 ns
KMM536256B-10	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	660 mA	262144 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.012 Amp	100 ns
KMM364C803AK-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1040 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	70 ns
KMM5401000A-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	950 mA	1048576 words		COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72		Other Memory ICs	1.27 mm	70 Cel	3-STATE	1MX40	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	41943040 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.01 Amp	80 ns
KMM5322100CKU-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp	50 ns
M53620412DW0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp	50 ns
KMM5334000CV-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		33	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	4MX33	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	138412032 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
KMM364C1600AS-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2400 mA	16777216 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM364C1600BS-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		16777216 words			5		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		50 ns
KMM372V3280BS1-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1540 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	53.34 mm	Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM5368003CKVG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		8MX36	8M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	301989888 bit	4.5 V			60 ns
KMM5362003C-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		50 ns
M53620400DW0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		4MX36	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		50 ns
M53211600BE0-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	16777216 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.008 Amp	60 ns
KMM591000B-10	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	540 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.009 Amp	100 ns
KMM5364000C-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel	3-STATE	4MX36	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
KMM332V410BS-L7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	DUAL	1	R-XDMA-N72	3.6 V	25.4 mm	Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.0024 Amp	70 ns
KMM532256AW-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	256KX32	256K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
KMM372C400BK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1620 mA	4194304 words		COMMON	5	5	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V	25.4 mm	Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM5364003CSWG-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	330 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel	DUAL	1	R-XDMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.003 Amp	50 ns
KMM364C883BS-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	640 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM364C120CJ-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1200 mA	1048576 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V	25.4 mm	Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.05 Amp	60 ns
KMM5361000BG-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.012 Amp	80 ns
KMM332V203AJ-L7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	280 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	DUAL	1	R-XDMA-N72	3.6 V	25.4 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0012 Amp	70 ns
M372V3280CT1-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1818 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	53.34 mm	Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM5401000AG-10	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	850 mA	1048576 words		COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72		Other Memory ICs	1.27 mm	70 Cel	3-STATE	1MX40	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	41943040 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.01 Amp	100 ns
KMM5816000T-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	560 mA	16777216 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	22.86 mm	Not Qualified	134217728 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.008 Amp	80 ns
KMM5328000BK-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	736 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm	Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.016 Amp	50 ns
KMM594000B-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.009 Amp	70 ns
M53620810DW0-50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1008 mA	8388608 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	0 Cel	SINGLE		R-PSMA-N72			Not Qualified	301989888 bit			.018 Amp	50 ns
KMM5324000AVG-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
KMM532512BWG-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
M372V3200DJ4-C60	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1818 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	50.8 mm	Not Qualified	2415919104 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	60 ns
KMM372V413CS-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	999 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	25.4 mm	Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM5364003BK/BKG-6	Samsung	FAST PAGE DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD			4194304 words			5		36	MICROELECTRONIC ASSEMBLY							4MX36	4M		SINGLE	1	R-XSMA-N72			Not Qualified	150994944 bit				60 ns
KMM5916000T-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	630 mA	16777216 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	16MX9	16M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	22.86 mm	Not Qualified	150994944 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	.009 Amp	80 ns
KMM5322200AW/AWG-6	Samsung	FAST PAGE DRAM MODULE		72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD			2097152 words			5		32	MICROELECTRONIC ASSEMBLY							2MX32	2M		SINGLE	1	R-XSMA-N72			Not Qualified	67108864 bit				60 ns
KMM5368100AK-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel	3-STATE	8MX36	8M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
KMM5322200AW-8	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
KMM372V1600BS-5	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2160 mA	16777216 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V	31.75 mm	Not Qualified	1207959552 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM5362003BG-6	Samsung	FAST PAGE DRAM MODULE		72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD			2097152 words					36	MICROELECTRONIC ASSEMBLY							2MX36	2M		SINGLE	1	R-XSMA-N72			Not Qualified	75497472 bit				60 ns
KMM5331000C-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		33	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX33	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	34603008 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
M364C0803BJ0-C50	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	8388608 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	536870912 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	50 ns
KMM584100AN-6	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	30		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	4MX8	4M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
KMM364C1680AK-7	Samsung	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2080 mA	16777216 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	DUAL	1	R-XDMA-N168	5.5 V		Not Qualified	1073741824 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.03 Amp	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.