GDDR3 DRAM DRAM 70

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4J55323QF-VC200	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	950 mA	8388608 words	4	YES	COMMON	2	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	2	2.1 V	1.4 mm	500 MHz	12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1		.13 Amp	4	12 mm	.35 ns
K4J55323QG-BC16	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		860 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136				600 MHz		Not Qualified	268435456 bit					.08 Amp	4,8		.29 ns
K4J52324QH-HJ7A0	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1452 mA	16777216 words	4,8	YES	COMMON	2.05	2	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	2.1 V	1.2 mm	1300 MHz	10 mm	Not Qualified	536870912 bit	2 V	AUTO/SELF REFRESH	e1	260	.109 Amp	4,8	14 mm	.18 ns
K4J52324QH-HJ1A0	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	960 mA	16777216 words	4,8	YES	COMMON	1.9	1.9	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	2 V	1.2 mm	1000 MHz	10 mm	Not Qualified	536870912 bit	1.5 V	AUTO/SELF REFRESH	e1	260	.085 Amp	4,8	14 mm	.2 ns
K4J55323QG-AC140	Samsung	GDDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	TIN LEAD	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0				14 mm	.26 ns
K4J55323QG-BC120	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1050 mA	8388608 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm	800 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		.1 Amp	4,8	14 mm	.23 ns
K4J55323QG-BC200	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	830 mA	8388608 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm	500 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		.07 Amp	4,8	14 mm	.35 ns
K4J52324QE-BC12	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1130 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM		R-PBGA-B136	3			800 MHz		Not Qualified	536870912 bit			e1	260	.09 Amp	4,8		.23 ns
K4J52324KI-HC14	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		540 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		BOTTOM		R-PBGA-B136				700 MHz		Not Qualified	536870912 bit				260	.07 Amp			.26 ns
K4J55323QF-GC15T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		1055 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				667 MHz		Not Qualified	268435456 bit					.14 Amp	4		.26 ns
K4J55323QF-GL20	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		950 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				500 MHz		Not Qualified	268435456 bit					.13 Amp	4		.35 ns
K4J55323QF-GC160	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	970 mA	8388608 words	4	YES	COMMON	2	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.1 V	1.4 mm	600 MHz	12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e0		.135 Amp	4	12 mm	.29 ns
K4J52324QH-HC120	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	820 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	1.9 V	1.2 mm	800 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	260	.075 Amp	4,8	14 mm	.23 ns
K4J55323QG-AC200	Samsung	GDDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	TIN LEAD	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0				14 mm	.35 ns
K4J55323QF-GL200	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	950 mA	8388608 words	4	YES	COMMON	1.8	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm	500 MHz	12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0		.13 Amp	4	12 mm	.35 ns
K4W2G1646C-HC11	Samsung	GDDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		285 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		BOTTOM		R-PBGA-B96				933 MHz		Not Qualified	2147483648 bit				260	.012 Amp	8		.195 ns
K4J52324QC-BJ140	Samsung	GDDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH	e1				14 mm	.26 ns
K4J55323QF-GC200	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	950 mA	8388608 words	4	YES	COMMON	2	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.1 V	1.4 mm	500 MHz	12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e0		.13 Amp	4	12 mm	.35 ns
K4J52324QE-BC140	Samsung	GDDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	890 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	1.9 V	1.2 mm	700 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	260	.08 Amp	4,8	14 mm	.26 ns
K4J55323QG-BC160	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	860 mA	8388608 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm	600 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		.08 Amp	4,8	14 mm	.29 ns
K4J52324QH-HC140	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	750 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	1.9 V	1.2 mm	700 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	260	.07 Amp	4,8	14 mm	.26 ns
K4J52324KI-HC7A	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		760 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		BOTTOM		R-PBGA-B136				1300 MHz		Not Qualified	536870912 bit				260	.095 Amp			.18 ns
K4J55323QG-BC140	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	935 mA	8388608 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm	700 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		.09 Amp	4,8	14 mm	.26 ns
K4J52324QH-HJ080	Samsung	GDDR3 DRAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1340 mA	16777216 words	4,8	YES	COMMON	2.05	2	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	2.1 V	1.2 mm	1200 MHz	10 mm	Not Qualified	536870912 bit	2 V	AUTO/SELF REFRESH	e1	260	.1 Amp	4,8	14 mm	.19 ns
K4J52324QE-BC14T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		890 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM		R-PBGA-B136	3			700 MHz		Not Qualified	536870912 bit			e1	260	.08 Amp	4,8		.26 ns
K4J55323QI-BC14	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		925 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136	3			700 MHz		Not Qualified	268435456 bit				260	.085 Amp	4,8		.26 ns
K4J55323QI-BC12	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136	3			800 MHz		Not Qualified	268435456 bit				260	.085 Amp	4,8		.23 ns
K4J55323QG-AC120	Samsung	GDDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	TIN LEAD	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0				14 mm	.23 ns
K4W2G1646C-HC15	Samsung	GDDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		245 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		BOTTOM		R-PBGA-B96				667 MHz		Not Qualified	2147483648 bit				260	.012 Amp	8		.255 ns
K4J55323QI-BJ1A	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1145 mA	8388608 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136				1000 MHz		Not Qualified	268435456 bit					.095 Amp	4,8		.2 ns
K4J52324KI-HC08	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		720 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		BOTTOM		R-PBGA-B136				1200 MHz		Not Qualified	536870912 bit				260	.09 Amp			.19 ns
K4J55323QF-GC20	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		950 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				500 MHz		Not Qualified	268435456 bit			e0		.13 Amp	4		.35 ns
K4J55323QI-BJ1AT	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1145 mA	8388608 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136	3			1000 MHz		Not Qualified	268435456 bit				260	.095 Amp	4,8		.2 ns
K4J55323QF-VL200	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	950 mA	8388608 words	4	YES	COMMON	1.8	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	2	1.9 V	1.4 mm	500 MHz	12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		.13 Amp	4	12 mm	.35 ns
K4J52324QE-BC12T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1130 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM		R-PBGA-B136	3			800 MHz		Not Qualified	536870912 bit			e1	260	.09 Amp	4,8		.23 ns
K4J52324QE-BJ11	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1270 mA	16777216 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		BOTTOM		R-PBGA-B136				900 MHz		Not Qualified	536870912 bit					.1 Amp	4,8		.22 ns
K4J55323QF-VL20T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		950 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				500 MHz		Not Qualified	268435456 bit					.13 Amp	4		.35 ns
K4J52324KI-HC1A	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		660 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		BOTTOM		R-PBGA-B136				1000 MHz		Not Qualified	536870912 bit				260	.085 Amp			.2 ns
K4J55323QG-AC160	Samsung	GDDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	TIN LEAD	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0				14 mm	.29 ns
K4J55323QF-GC140	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1060 mA	8388608 words	4	YES	COMMON	2	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.1 V	1.4 mm	700 MHz	12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e0		.14 Amp	4	12 mm	.26 ns
K4J52324QE-BJ11T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1270 mA	16777216 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		BOTTOM		R-PBGA-B136				900 MHz		Not Qualified	536870912 bit					.1 Amp	4,8		.22 ns
K4J55323QF-GC16T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				600 MHz		Not Qualified	268435456 bit					.135 Amp	4		.29 ns
K4J52324QE-BJ1A0	Samsung	GDDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1520 mA	16777216 words	4,8	YES	COMMON	1.9	1.9	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	2 V	1.2 mm	1000 MHz	11 mm	Not Qualified	536870912 bit	1.8 V	AUTO/SELF REFRESH	e1	260	.11 Amp	4,8	14 mm	.2 ns
K4J55323QF-VC140	Samsung	GDDR3 DRAM	OTHER	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	2	2.1 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1				12 mm
K4J55323QF-GC15	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		1055 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				667 MHz		Not Qualified	268435456 bit					.14 Amp	4		.26 ns
K4J52324QE-BJ1A	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1520 mA	16777216 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM		R-PBGA-B136	3			1000 MHz		Not Qualified	536870912 bit			e1	260	.11 Amp	4,8		.2 ns
K4J55323QF-GC120	Samsung	GDDR3 DRAM	OTHER	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.9		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	TIN LEAD	BOTTOM	1	S-PBGA-B144		2 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.8 V	AUTO/SELF REFRESH	e0				12 mm
K4J55323QI-BC12T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136	3			800 MHz		Not Qualified	268435456 bit				260	.085 Amp	4,8		.23 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.