GDDR3 DRAM DRAM 70

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4J55323QF-VC150	Samsung	GDDR3 DRAM	OTHER	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	2	2.1 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1					12 mm
K4W2G1646C-HC1A	Samsung	GDDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		BOTTOM		R-PBGA-B96				1066 MHz		Not Qualified	2147483648 bit					260		8		.18 ns
K4J10324KE-HC140	Samsung	GDDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX32	32M		BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		10 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH						14 mm
K4J55323QG-BC20	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		830 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136				500 MHz		Not Qualified	268435456 bit						.07 Amp	4,8		.35 ns
K4J55323QI-BC14T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		925 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136	3			700 MHz		Not Qualified	268435456 bit					260	.085 Amp	4,8		.26 ns
K4J52324KI-HC12	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		580 mA	16777216 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		BOTTOM		R-PBGA-B136				800 MHz		Not Qualified	536870912 bit					260	.075 Amp			.23 ns
K4J55323QI-BJ11	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1065 mA	8388608 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136	3			900 MHz		Not Qualified	268435456 bit					260	.09 Amp	4,8		.22 ns
K4J55323QG-BC12	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1050 mA	8388608 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136	3			800 MHz		Not Qualified	268435456 bit					260	.1 Amp	4,8		.23 ns
K4J55323QF-VL20	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		950 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				500 MHz		Not Qualified	268435456 bit						.13 Amp	4		.35 ns
K4J52324QE-BJ1AT	Samsung	GDDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1520 mA	16777216 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM		R-PBGA-B136	3			1000 MHz		Not Qualified	536870912 bit			e1		260	.11 Amp	4,8		.2 ns
K4J55323QF-GL20T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		950 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				500 MHz		Not Qualified	268435456 bit						.13 Amp	4		.35 ns
K4J55323QI-BJ11T	Samsung	GDDR3 DRAM	OTHER	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1065 mA	8388608 words	4,8		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		R-PBGA-B136	3			900 MHz		Not Qualified	268435456 bit					260	.09 Amp	4,8		.22 ns
K4J55323QF-GC14T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		1060 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				700 MHz		Not Qualified	268435456 bit						.14 Amp	4		.26 ns
K4J55323QF-VC160	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	970 mA	8388608 words	4	YES	COMMON	2	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	2	2.1 V	1.4 mm	600 MHz	12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1			.135 Amp	4	12 mm	.29 ns
K4J55323QF-GC14	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		1060 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				700 MHz		Not Qualified	268435456 bit			e0			.14 Amp	4		.26 ns
K4J55323QF-GC12	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		1030 mA	8388608 words	4		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				800 MHz		Not Qualified	268435456 bit			e0			.085 Amp	4		.23 ns
K4W2G1646C-HC12	Samsung	GDDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		BOTTOM		R-PBGA-B96				800 MHz		Not Qualified	2147483648 bit					260	.012 Amp	8		.225 ns
K4J55323QF-GC150	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1055 mA	8388608 words	4	YES	COMMON	2	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.1 V	1.4 mm	667 MHz	12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e0			.14 Amp	4	12 mm	.26 ns
K4J55323QF-GC20T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		950 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				500 MHz		Not Qualified	268435456 bit						.13 Amp	4		.35 ns
K4J52324QE-BC120	Samsung	GDDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1130 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	1.9 V	1.2 mm	800 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.09 Amp	4,8	14 mm	.23 ns
K4J52324QE-BJ110	Samsung	GDDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1270 mA	16777216 words	4,8	YES	COMMON	1.9	1.9	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		BOTTOM	1	R-PBGA-B136		2 V	1.2 mm	900 MHz	11 mm	Not Qualified	536870912 bit	1.8 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.1 Amp	4,8	14 mm	.22 ns
K4J55323QF-GC16	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				600 MHz		Not Qualified	268435456 bit			e0			.135 Amp	4		.29 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.