HYPERRAM DRAM 184

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Length	Maximum Access Time
S27KS0642GABHM020	Infineon Technologies	HYPERRAM	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words			1.8	1	GRID ARRAY			125 Cel		64MX1	64M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V		200 MHz		67108864 bit	1.7 V				35 ns
S27KL0642GABHM023	Infineon Technologies	HYPERRAM	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words				1	GRID ARRAY			125 Cel		64MX1	64M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V		200 MHz		67108864 bit	2.7 V				35 ns
S70KL1282GABHM020	Infineon Technologies	HYPERRAM	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		COMMON	3	1	GRID ARRAY			125 Cel		128MX1	128M	-40 Cel	BOTTOM	1	R-PBGA-B240	3	3.6 V		200 MHz		134217728 bit	2.7 V				35 ns
S70KS1282GABHM033	Infineon Technologies	HYPERRAM
S70KS1282GABHM030	Infineon Technologies	HYPERRAM
S70KS1283DPBHM033	Infineon Technologies	HYPERRAM
S27KL0642GABHA020	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm	67108864 bit	2.7 V		.00025 Amp	8 mm
S70KL1282DPBHM030	Infineon Technologies	HYPERRAM
S70KL1282GABHM030	Infineon Technologies	HYPERRAM
S70KL1282DPBHM023	Infineon Technologies	HYPERRAM
S70KL1283DPBHM023	Infineon Technologies	HYPERRAM
S70KL1283DPBHM020	Infineon Technologies	HYPERRAM
S70KS1282DPBHM030	Infineon Technologies	HYPERRAM
S70KL1282GABHV023	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm	134217728 bit	2.7 V		.00075 Amp	8 mm
S70KS1283DPBHM020	Infineon Technologies	HYPERRAM
S70KS1283GABHM023	Infineon Technologies	HYPERRAM
S70KL1283GABHM030	Infineon Technologies	HYPERRAM
S70KL1283GABHM023	Infineon Technologies	HYPERRAM
S70KS1283GABHM020	Infineon Technologies	HYPERRAM
S70KL1283GABHM033	Infineon Technologies	HYPERRAM
S70KL1282DPBHM033	Infineon Technologies	HYPERRAM
S70KS1282DPBHM020	Infineon Technologies	HYPERRAM
S70KS1283DPBHM030	Infineon Technologies	HYPERRAM
S70KS1283GABHM030	Infineon Technologies	HYPERRAM
S70KS1282DPBHM023	Infineon Technologies	HYPERRAM
S70KL1283DPBHM030	Infineon Technologies	HYPERRAM
S70KL1283DPBHM033	Infineon Technologies	HYPERRAM
S70KS1283GABHM033	Infineon Technologies	HYPERRAM
S27KS0643GABHB020	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel		8MX8	8M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm	67108864 bit	1.7 V	SELF REFRESH	.00036 Amp	8 mm	35 ns
S27KL0643DPBHI023	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel		8MX8	8M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm	67108864 bit	2.7 V	SELF REFRESH	.00025 Amp	8 mm	35 ns
S70KL1283GABHV023	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel		16MX8	16M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm	134217728 bit	2.7 V	SELF REFRESH	.00075 Amp	8 mm	35 ns
S27KL0643DPBHV023	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel		8MX8	8M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm	67108864 bit	2.7 V	SELF REFRESH	.00036 Amp	8 mm	35 ns
S27KL0643GABHV023	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel		8MX8	8M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm	67108864 bit	2.7 V	SELF REFRESH	.00036 Amp	8 mm	35 ns
S27KL0643DPBHI020	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel		8MX8	8M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm	67108864 bit	2.7 V	SELF REFRESH	.00025 Amp	8 mm	35 ns
S27KL0642GABHI030	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel		8MX8	8M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm	67108864 bit	2.7 V	SELF REFRESH	.00025 Amp	8 mm
S70KL1283DPBHI023	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	56 mA	16777216 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel		16MX8	16M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm	134217728 bit	2.7 V	SELF REFRESH	.0005 Amp	8 mm	35 ns
S27KL0643DPBHV020	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel		8MX8	8M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm	67108864 bit	2.7 V	SELF REFRESH	.00036 Amp	8 mm	35 ns
S70KL1283DPBHI020	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	56 mA	16777216 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	85 Cel		16MX8	16M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm	134217728 bit	2.7 V	SELF REFRESH	.0005 Amp	8 mm	35 ns
S27KL0643GABHV020	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel		8MX8	8M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm	67108864 bit	2.7 V	SELF REFRESH	.00036 Amp	8 mm	35 ns
S70KL1283GABHV020	Infineon Technologies	HYPERRAM	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1 mm	105 Cel		16MX8	16M	-40 Cel	BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm	134217728 bit	2.7 V	SELF REFRESH	.00075 Amp	8 mm	35 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.