LPDDR5 DRAM DRAM 49

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

MT62F1G64D8EK-031AAT:B

Micron Technology

LPDDR5 DRAM

MT62F1G64D8EK-031FAAT:B

Micron Technology

LPDDR5 DRAM

MT62F1G32D4DR-031WT:B

Micron Technology

LPDDR5 DRAM

YES

1

CMOS

BALL

SYNCHRONOUS

1073741824 words

1.05

32

85 Cel

1GX32

1G

-25 Cel

BOTTOM

1

3200 MHz

34359738368 bit

MT62F1G64D8EK-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F1G32D4DS-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F1G64D8CH-031WT:B

Micron Technology

LPDDR5 DRAM

1

CMOS

1073741824 words

64

85 Cel

1GX64

1G

-25 Cel

1

68719476736 bit

MT62F512M32D2DR-031WT:B

Micron Technology

LPDDR5 DRAM

OTHER

YES

1

CMOS

BALL

536870912 words

1.05

32

85 Cel

512MX32

512M

-25 Cel

BOTTOM

1

3200 MHz

17179869184 bit

MT62F512M64D4BG-031WT:B

Micron Technology

LPDDR5 DRAM

OTHER

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

1.05

32

85 Cel

512MX64

512M

-25 Cel

BOTTOM

1

3200 MHz

34359738368 bit

MT62F1G64D8CH-031WT:A

Micron Technology

LPDDR5 DRAM

1

CMOS

1073741824 words

64

85 Cel

1GX64

1G

-25 Cel

1

68719476736 bit

MT62F512M32D2DS-031WT:B

Micron Technology

LPDDR5 DRAM

1

CMOS

536870912 words

32

85 Cel

512MX32

512M

-25 Cel

1

17179869184 bit

MT62F1G64D8DR-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F2G32D8DS-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F1G32D4DS-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F512M32D2EK-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F2G32D8DR-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4DS-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F512M32D2DS-031AUT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4EK-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4EK-031FAAT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4DS-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F512M32D2DS-031FAAT:B

Micron Technology

LPDDR5 DRAM

MT62F512M32D2DR-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F1G32D4EK-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F1G64D8EK-031AIT:B

Micron Technology

LPDDR5 DRAM

MT62F512M32D2DS-031AIT:B

Micron Technology

LPDDR5 DRAM

MT62F1G64D8EK-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F2G32D8EK-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F1G32D4DS-031AAT:B

Micron Technology

LPDDR5 DRAM

MT62F1G32D4DS-031AIT:B

Micron Technology

LPDDR5 DRAM

MT62F2G32D8DR-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F2G32D8EK-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F1G32D4DR-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F1G64D8DS-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F1G32D4DS-031FAAT:B

Micron Technology

LPDDR5 DRAM

MT62F2G32D8DS-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F512M32D2EK-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4DR-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F1G64D8EK-031AUT:B

Micron Technology

LPDDR5 DRAM

MT62F1G32D4EK-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4EK-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4EK-031AAT:B

Micron Technology

LPDDR5 DRAM

MT62F512M32D2DS-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4DR-031IT:B

Micron Technology

LPDDR5 DRAM

MT62F512M32D2DS-031AAT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4EK-031AUT:B

Micron Technology

LPDDR5 DRAM

MT62F1G64D8DS-031WT:B

Micron Technology

LPDDR5 DRAM

MT62F512M64D4EK-031AIT:B

Micron Technology

LPDDR5 DRAM

MT62F1G64D8DR-031IT:B

Micron Technology

LPDDR5 DRAM

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.