SYNCHRONOUS DRAM MODULE DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Length	Maximum Access Time
THMY7216D0CEG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2712 mA	16777216 words	YES	COMMON	3.3	3.3	4	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	DUAL	1	R-XDMA-N168	3.6 V	43.18 mm	133 MHz	4 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH; WD-MAX	.049 Amp	133.35 mm	5.4 ns
THMY641691EG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1200 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	DUAL	1	R-XDMA-X168	3.6 V	30.48 mm	100 MHz	2.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.008 Amp	133.35 mm	7 ns
THLG645111AFG-12	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		450 mA	524288 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX64	512K	DUAL		R-PDMA-N144			83 MHz		Not Qualified	33554432 bit			.004 Amp		9 ns
THMY7264E0LEG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4060 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH	.046 Amp		6 ns
THMY51E2SA80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5673 mA	134217728 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	DUAL	1	R-XDMA-N168	3.6 V	43.05 mm	125 MHz	6.35 mm	Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH	.067 Amp	133.35 mm	6 ns
THMY7232G1EG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3420 mA	67108864 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	DUAL	1	R-XDMA-N168	3.6 V	34.85 mm		4 mm	Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH	.018 Amp	133.35 mm	5.4 ns
THMY51E10C75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3429 mA	67108864 words	YES	COMMON	3.3	3.3	4	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX4	64M	DUAL	1	R-XDMA-N168	3.6 V	43.18 mm	133 MHz	4 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX	.049 Amp	133.35 mm	5.4 ns
THMY6480H1EG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	720 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-X168	3.6 V	25.4 mm	125 MHz	2.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	.004 Amp	133.35 mm	6 ns
THMY64E11A70L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		16	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		8MX16	8M	DUAL	1	R-XDMA-N168	3.6 V	25.53 mm		2.8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX		133.35 mm	5.4 ns
THLY648031BFG-10L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N144	3.6 V	30.48 mm	100 MHz		Not Qualified	536870912 bit	3 V		.008 Amp		7 ns
THLY648031BFG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N144	3.6 V	30.48 mm	125 MHz		Not Qualified	536870912 bit	3 V		.008 Amp		6 ns
THLY6480H1FG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH			5.4 ns
THMY25E11C70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1530 mA	33554432 words	YES	COMMON	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX8	32M	DUAL	1	R-XDMA-N168	3.6 V	34.98 mm	143 MHz	2.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX	.009 Amp	133.35 mm	5.4 ns
THLY724031BFG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	700 mA	4194304 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX72	4M	DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	301989888 bit	3 V		.005 Amp		6 ns
THLY648051FG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	720 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-X144	3.6 V	25.4 mm	125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	.004 Amp		6 ns
THMY51E01C70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		8	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		64MX8	64M	DUAL	1	R-XDMA-N168	3.6 V	34.85 mm		4 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX		133.35 mm	5.4 ns
THMY51E10B75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH			5.4 ns
THLY25N01B80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH	.008 Amp		6 ns
THMY6420B1AEG10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	2097152 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	DUAL		R-PDMA-N168			100 MHz		Not Qualified	134217728 bit			.016 Amp		8.5 ns
THMY51E01B80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH			6 ns
THLY641651FG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	ZIG-ZAG	1	R-XZMA-N144	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH			6 ns
THMY7240F1BEG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		4MX72	4M	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	301989888 bit	3 V	AUTO/SELF REFRESH			6 ns
THMY12E11A80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		8	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		16MX8	16M	DUAL	1	R-XDMA-N168	3.6 V	34.98 mm		2.8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX		133.35 mm	6 ns
THMY25E01A75L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH			5.4 ns
THMY64E11A80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		16	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		8MX16	8M	DUAL	1	R-XDMA-N168	3.6 V	25.53 mm		2.8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX		133.35 mm	6 ns
THMY642051AEG-12	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1000 mA	2097152 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	DUAL		R-PDMA-N168			83.3 MHz		Not Qualified	134217728 bit			.016 Amp		9 ns
THMY7232F0EG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3433 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH	.031 Amp		5.4 ns
THLY641681FG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		16777216 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			.8 mm	70 Cel		16MX64	16M	DUAL	1	R-XDMA-X144	3.6 V	26.67 mm		3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		67.6 mm	6 ns
THMY51N01B75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2560 mA	67108864 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	.016 Amp		5.4 ns
THLY12N01A70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1360 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	DUAL	1	R-XDMA-N144	3.6 V		143 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.008 Amp		5.4 ns
THLY25N01B75L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH	.008 Amp		5.4 ns
THLY12N11B75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.004 Amp		5.4 ns
THMY25N01A75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH			5.4 ns
THMY7232F0EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3250 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH	.028 Amp		6 ns
THMY25E01A80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH			6 ns
THLY12N11B80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	16777216 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	.004 Amp		6 ns
THLY648031FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1		NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	ZIG-ZAG	1	R-XZMA-N144	3.45 V				Not Qualified	536870912 bit	3.15 V	AUTO/SELF REFRESH			8.5 ns
THMY641661BEG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V		.016 Amp		6 ns
THLY6480X1MG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY			.5 mm	70 Cel		8MX64	8M	ZIG-ZAG	1	R-XZMA-N144	3.6 V	30 mm		3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		38 mm	6 ns
THMY25E10B80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1588 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH	.035 Amp		6 ns
THMY1GE2SB80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH			6 ns
THMY728071BEG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1260 mA	8388608 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	603979776 bit	3 V		.009 Amp		6 ns
THNY51E10B70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3430 mA	67108864 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	DUAL		R-PDMA-N168			143 MHz		Not Qualified	4831838208 bit			.049 Amp		5.4 ns
THLY648031BFG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	DUAL	1	R-XDMA-N144	3.6 V	30.48 mm	125 MHz		Not Qualified	536870912 bit	3 V		.008 Amp		6 ns
THMY7280H1EG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	900 mA	8388608 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	DUAL	1	R-XDMA-X168	3.6 V	25.4 mm	125 MHz	2.8 mm	Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH	.005 Amp	133.35 mm	6 ns
THMY64E11A70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		16	MICROELECTRONIC ASSEMBLY			1.27 mm	70 Cel		8MX16	8M	DUAL	1	R-XDMA-N168	3.6 V	25.53 mm		2.8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH; WD-MAX		133.35 mm	5.4 ns
THMY25E10B70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1845 mA	33554432 words	YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	DUAL	1	R-XDMA-N168	3.6 V		143 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH	.035 Amp		5.4 ns
THMY25E01A70L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH			5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.