Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
YES |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
9663676416 bit |
3 V |
AUTO/SELF REFRESH |
5.4 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
UNSPECIFIED |
SYNCHRONOUS |
134217728 words |
YES |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-X168 |
3.6 V |
Not Qualified |
9663676416 bit |
3 V |
AUTO/SELF REFRESH |
5.4 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
210 mA |
67108864 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
4831838208 bit |
3 V |
AUTO/SELF REFRESH |
.002 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
210 mA |
33554432 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
2415919104 bit |
3 V |
AUTO/SELF REFRESH |
.002 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3960 mA |
67108864 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
4831838208 bit |
.036 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
680 mA |
16777216 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
1073741824 bit |
3 V |
AUTO/SELF REFRESH |
.008 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
YES |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
32MX64 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
2147483648 bit |
3 V |
AUTO/SELF REFRESH |
6 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2160 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
2415919104 bit |
.018 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2160 mA |
33554432 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
133 MHz |
Not Qualified |
2415919104 bit |
3 V |
AUTO/SELF REFRESH |
.018 Amp |
5.4 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
8388608 words |
YES |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
8MX64 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
536870912 bit |
3 V |
AUTO/SELF REFRESH |
5.4 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
230 mA |
8388608 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
133 MHz |
Not Qualified |
536870912 bit |
3 V |
AUTO/SELF REFRESH |
.0015 Amp |
5.4 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
520 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
268435456 bit |
.004 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
130 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
603979776 bit |
3 V |
.001 Amp |
8 ns |
|||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
3780 mA |
16777216 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
1207959552 bit |
3 V |
AUTO/SELF REFRESH |
.027 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2900 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
301989888 bit |
.04 Amp |
8 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1920 mA |
33554432 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
133 MHz |
Not Qualified |
2147483648 bit |
3 V |
AUTO/SELF REFRESH |
.016 Amp |
5.4 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
260 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX64 |
4M |
0 Cel |
DUAL |
R-PDMA-N144 |
133 MHz |
Not Qualified |
268435456 bit |
.002 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
8388608 words |
YES |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
8MX64 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
Not Qualified |
536870912 bit |
3 V |
AUTO/SELF REFRESH |
6 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
680 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N144 |
31.75 mm |
100 MHz |
Not Qualified |
536870912 bit |
.004 Amp |
6 ns |
||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
130 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
1207959552 bit |
.001 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
4194304 words |
YES |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
4MX64 |
4M |
0 Cel |
ZIG-ZAG |
1 |
R-XZMA-N144 |
3.6 V |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
6 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
800 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
134217728 bit |
.016 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1024 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
1073741824 bit |
.008 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
220 mA |
67108864 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
4831838208 bit |
3 V |
AUTO/SELF REFRESH |
.002 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
33554432 words |
YES |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
2415919104 bit |
3 V |
AUTO/SELF REFRESH |
5.4 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
130 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
2415919104 bit |
3 V |
.001 Amp |
6 ns |
|||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1760 mA |
67108864 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
125 MHz |
Not Qualified |
4294967296 bit |
3 V |
AUTO/SELF REFRESH |
.016 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
210 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
2415919104 bit |
.002 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
UNSPECIFIED |
SYNCHRONOUS |
33554432 words |
YES |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-X168 |
3.6 V |
Not Qualified |
2415919104 bit |
3 V |
AUTO/SELF REFRESH |
5.4 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
3840 mA |
67108864 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
133 MHz |
Not Qualified |
4294967296 bit |
3 V |
AUTO/SELF REFRESH |
.032 Amp |
5.4 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
900 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
150994944 bit |
3 V |
AUTO/SELF REFRESH |
.018 Amp |
8 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2500 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
83 MHz |
Not Qualified |
301989888 bit |
.04 Amp |
10 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
800 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX64 |
2M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
134217728 bit |
.016 Amp |
8 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
900 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
3 V |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
150994944 bit |
3 V |
AUTO/SELF REFRESH |
.018 Amp |
8 ns |
||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1760 mA |
33554432 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
2147483648 bit |
3 V |
AUTO/SELF REFRESH |
.016 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
130 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
536870912 bit |
.001 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8388608 words |
YES |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
8MX64 |
8M |
0 Cel |
ZIG-ZAG |
1 |
R-XZMA-N144 |
3.6 V |
Not Qualified |
536870912 bit |
3 V |
AUTO/SELF REFRESH |
6 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
130 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
603979776 bit |
3 V |
.001 Amp |
6 ns |
|||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
240 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1207959552 bit |
.002 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
270 mA |
67108864 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
4831838208 bit |
.002 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
16777216 words |
YES |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
16MX64 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N144 |
3.6 V |
Not Qualified |
1073741824 bit |
3 V |
AUTO/SELF REFRESH |
5.4 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
900 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX72 |
2M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
150994944 bit |
.018 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
110 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
603979776 bit |
3 V |
.001 Amp |
6 ns |
|||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
130 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
1207959552 bit |
.001 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
16777216 words |
YES |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
16MX64 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
Not Qualified |
1073741824 bit |
3 V |
AUTO/SELF REFRESH |
6 ns |
||||||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
144 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2080 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM144,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
R-PDMA-N144 |
100 MHz |
Not Qualified |
1073741824 bit |
.016 Amp |
6 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
270 mA |
67108864 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
4294967296 bit |
.002 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
90 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX64 |
8M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
536870912 bit |
3 V |
.001 Amp |
8 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.