HYS72V128220GU-7.5-A by Infineon Technologies | Memory ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	HYS72V128220GU-7.5-A
Description	SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Shape: RECTANGULAR; No. of Words: 134217728 words; Maximum Supply Voltage (Vsup): 3.6 V;
Datasheet	HYS72V128220GU-7.5-A Datasheet
In Stock	642

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Organization:	128MX72
Access Mode:	DUAL BANK PAGE BURST
Minimum Supply Voltage (Vsup):	3 V
Surface Mount:	NO
No. of Terminals:	168
No. of Words:	134217728 words
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	CMOS
JESD-30 Code:	R-XDMA-N168
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
No. of Ports:	1
Memory Density:	9663676416 bit
Self Refresh:	YES
Memory IC Type:	SYNCHRONOUS DRAM MODULE
Minimum Operating Temperature:	0 Cel
Memory Width:	72
No. of Functions:	1
Qualification:	Not Qualified
Maximum Access Time:	5.4 ns
No. of Words Code:	128M
Nominal Supply Voltage / Vsup (V):	3.3
Additional Features:	AUTO/SELF REFRESH
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
642	-	-

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.