Micron Technology - MTA4ATF51264HZ-3G2R1

  1. Home
  2. Micron Technology - MTA4ATF51264HZ-3G2R1
MTA4ATF51264HZ-3G2R1 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MTA4ATF51264HZ-3G2R1
Description DDR4 DRAM MODULE;
Datasheet MTA4ATF51264HZ-3G2R1 Datasheet
In Stock1,247
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,247 $17.181 $21,424.707

Popular Products

Category Top Products

MT47H32M16NF-25EAIT:H by Micron Technology

MT47H32M16NF-25EAIT:H

Micron Technology

Micron Technology's MT47H32M16NF-25EAIT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a thin profile grid array package and common I/O type, suitable for industrial applications requiring high-speed synchronous memory with self-refresh capability.
KM416C1000AJ-7 by Samsung

KM416C1000AJ-7

Samsung

Samsung's KM416C1000AJ-7 is a 1MX16 DRAM with 70ns access time, operating at 5V. It features a small outline package, 3-state output, and fast page access mode. Ideal for commercial applications requiring high memory density and fast data retrieval.
MT46H32M16LFBF-6IT by Micron Technology

MT46H32M16LFBF-6IT

Micron Technology

LPDDR1 DRAM; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MT46V32M16P-5BIT:J by Micron Technology

MT46V32M16P-5BIT:J

Micron Technology

Micron Technology's MT46V32M16P-5BIT:J is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high-speed memory with a small outline package and thin profile design.
NT5CC256M16EP-EKT by Nanya Technology

NT5CC256M16EP-EKT

Nanya Technology

NT5CC256M16EP-EKT by Nanya Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a voltage of 1.35V, has a temperature range of -40 to 95 °C, and is suitable for industrial applications.
MT53D512M16D1DS-046WT:D by Micron Technology

MT53D512M16D1DS-046WT:D

Micron Technology

LPDDR4 DRAM;
MTA4ATF51264HZ-3G2R1 by Micron Technology

MTA4ATF51264HZ-3G2R1

Micron Technology

DDR4 DRAM MODULE;
MT47H64M16NF-25EAIT:M by Micron Technology

MT47H64M16NF-25EAIT:M

Micron Technology

Micron Technology's MT47H64M16NF-25EAIT:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.
KM416C1000AJ-6 by Samsung

KM416C1000AJ-6

Samsung

Samsung KM416C1000AJ-6 is a 1MX16 DRAM with 1048576 words, 16-bit memory width, and 60ns access time. It operates at 5V with a max standby current of 0.001A, suitable for fast page applications in commercial temperature grades.
EDB4432BBBJ-1DAAT-F-R by Micron Technology

EDB4432BBBJ-1DAAT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAAT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Ideal for applications requiring high memory density and low power consumption in compact devices.
MT40A512M16JY-083EIT:B by Micron Technology

MT40A512M16JY-083EIT:B

Micron Technology

Micron Technology's MT40A512M16JY-083EIT:B is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
S27KL0642GABHB023 by Infineon Technologies

S27KL0642GABHB023

Infineon Technologies

Infineon's S27KL0642GABHB023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.
MT61K512M32KPA-16:BTR by Micron Technology

MT61K512M32KPA-16:BTR

Micron Technology

Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
AS4C256M16D3A-12BIN by Alliance Memory

AS4C256M16D3A-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3A-12BIN is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.
IS43R16320D-6BL by Integrated Silicon Solution

IS43R16320D-6BL

Integrated Silicon Solution

IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.
AS4C64M16D2A-25BCNTR by Alliance Memory

AS4C64M16D2A-25BCNTR

Alliance Memory

Alliance Memory's AS4C64M16D2A-25BCNTR is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC8M16A2P-75IT by Micron Technology

MT48LC8M16A2P-75IT

Micron Technology

MT48LC8M16A2P-75IT by Micron Technology is a 8MX16 Synchronous DRAM with a memory density of 134217728 bit. It operates at a max clock frequency of 133 MHz and has a max access time of 5.4 ns. This memory module is commonly used in industrial applications requiring high-speed data storage and retrieval.
KM416S4020AT-G10 by Samsung

KM416S4020AT-G10

Samsung

Samsung's KM416S4020AT-G10 is a 4MX16 DRAM with 3.3V supply, operating at 100MHz. It features a small outline, thin profile package and offers 67108864 bits memory density. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT48LC8M16A2P-7EIT:L by Micron Technology

MT48LC8M16A2P-7EIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 143 MHz clock frequency. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density.
MT40A256M16LY-062EIT:FTR by Micron Technology

MT40A256M16LY-062EIT:FTR

Micron Technology

Micron Technology's MT40A256M16LY-062EIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.