SYNCHRONOUS GRAPHICS RAM DRAM 266

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4D26323QG-VC22	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	615 mA	4194304 words	2,4,8	YES	COMMON	2	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32		DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM	1	S-PBGA-B144	3	2.1 V	1.4 mm	450 MHz	12 mm	Not Qualified	134217728 bit	1.9 V	AUTO/SELF REFRESH			260	.066 Amp	2,4,8	12 mm	.45 ns
K4G323222M-QL80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
K4D261638F-LC400	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M	0 Cel	TIN BISMUTH	DUAL	1	R-PDSO-G66	3	2.625 V	1.2 mm	250 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e6			.045 Amp	2,4,8	22.22 mm	.6 ns
K4D553238E-EC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32		DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	200 MHz	12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH			260		2,4,8	12 mm	.7 ns
KM4132G512TQ-8/F8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	6.5 ns
K4G323222A-PC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
K4G813222B-UC10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK				.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH						20 mm	7 ns
K4G163222A-QL60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5.5 ns
K4D261638F-TC5A0	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M	0 Cel		DUAL	1	R-PDSO-G66	1	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	134217728 bit	2.4 V	AUTO/SELF REFRESH					2,4,8	22.22 mm	.7 ns
KM4132G271BTQR-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	7 ns
K4G163222A-QL80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	6 ns
K4G323222A-QL60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
K4G163222A-QL55	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5 ns
K4G323222M-QC60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		QUAD	1	R-PQFP-G100	1	3.6 V	1.2 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH				.002 Amp	4,8	20 mm	5.5 ns
KM4132G512Q-6/F6	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK				.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5.5 ns
KM4132G112Q-F8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0			.002 Amp	4,8	20 mm	6 ns
K4G323222M-PL70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
K4G813222B-QC10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	7 ns
K4U52324QE-BC070	Samsung	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1310 mA	16777216 words	8	YES	COMMON	1.8	1.8	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.89 V	1.2 mm	1400 MHz	11 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH	e1			.135 Amp	8	14 mm	.16 ns
K4G323222M-QL45	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4 ns
K4G813222B-QC80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6.5 ns
K4D553238E-EC33	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32		DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	300 MHz	12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH			260		2,4,8	12 mm	.6 ns
KM4132G512TQ-10/F0	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	7 ns
K4G163222A-QC80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	6 ns
K4G323222M-QC70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		QUAD	1	R-PQFP-G100	1	3.6 V	1.2 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				.002 Amp	4,8	20 mm	5.5 ns
K4G323222M-QL70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
KM4132G112TQ-7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0			.002 Amp	4,8	20 mm	5.5 ns
KM4132G112TQ-F5	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	4.5 ns
KM4132G112TQ-FD	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	4 ns
K4G323222M-QL55	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	183 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5 ns
MT61K256M32JE-12:ATR	Micron Technology	SYNCHRONOUS GRAPHICS RAM																															TIN SILVER COPPER														30	260
MT58K256M32JA-110:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM		190	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm			256MX32	256M			BOTTOM	1	R-PBGA-B190		1.3905 V	1.2 mm		10 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH						14 mm
MT61K256M32JE-16:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH						14 mm
MT45V512K32LG-6	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE				.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH						20 mm
MT61K256M32JE-14:ATR	Micron Technology	SYNCHRONOUS GRAPHICS RAM																															TIN SILVER COPPER														30	260
EDW4032BABG-70-F-R	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY						14 mm
MT58K256M321JA-120:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM		190	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.65 mm			256MX32	256M			BOTTOM	1	R-PBGA-B190		1.3905 V	1.2 mm		10 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH		30	260			14 mm
MT51J256M32HF-70:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						14 mm
MT45V512K32RG-65	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE				.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH						20 mm
MT45V512K32LG-7	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE				.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO REFRESH AND SELF REFRESH						20 mm
MT61K256M32JE-12:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH	e1	30	260			14 mm
EDW4032BABG-80-F-D	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY						14 mm
EDW4032BABG-60-F-D	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY						14 mm
MT58K256M321JA-110:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM		190	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.65 mm			256MX32	256M			BOTTOM	1	R-PBGA-B190		1.3905 V	1.2 mm		10 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH		30	260			14 mm
MT51J256M32HF-80:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	95 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						14 mm
EDW4032BABG-60-F-R	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY						14 mm
MT45V512K32LG-65	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE				.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH						20 mm
MT58K256M32JA-120:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM		190	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm			256MX32	256M			BOTTOM	1	R-PBGA-B190		1.3905 V	1.2 mm		10 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH						14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.