SYNCHRONOUS GRAPHICS RAM DRAM 266

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
EDW4032BABG-70-F-D	Micron Technology	SYNCHRONOUS GRAPHICS RAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH		16		.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.6V, 1.55V, 1.5V NOMINAL SUPPLY						14 mm
MT61K256M32JE-14:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH	e1	30	260			14 mm
K4G323222M-PC60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
MT58K256M32JA-100:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM		190	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm			256MX32	256M			BOTTOM	1	R-PBGA-B190		1.3905 V	1.2 mm		10 mm		8589934592 bit	1.3095 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
KM4132G112Q-5	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	4.5 ns
MT41LC256K32D4LG-12	Micron Technology	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	180 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	84 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20 mm	12.5 ns
HYB18H256321AF-14	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						14 mm	.25 ns
HYB18H512321AFL14	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.25 ns
HYB18T256324F-22	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						11 mm	.45 ns
HYB18H512321AF-14	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH						14 mm	.25 ns
HYB18H256321AFL14	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.25 ns
HYB18H256321AFL20	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.35 ns
HYB18H256321AF-12	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						14 mm	.22 ns
HYB18H512321AF-12	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH						14 mm	.22 ns
HYB18H512321AFL20	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.35 ns
HYB39S16320TQ-7	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	143 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20 mm	5.5 ns
HYB18H512321AFL16	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.28 ns
HYB18T256324F-20	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						11 mm	.4 ns
HYB39S16320TQ-8	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	125 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20 mm	6 ns
HYB18H512321AF-16	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH	e1					14 mm	.28 ns
HYB18H256321AFL16	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.28 ns
HYB39S16320TQ-6	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20 mm	5.5 ns
HYB18H512321AF-20	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH	e1					14 mm	.35 ns
HYB18T256324F-16	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						11 mm	.4 ns
HYB18H256321AF-16	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1					14 mm	.28 ns
TC59G1631AFB-80	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0					20 mm	7.5 ns
TC59G1631AFB-10	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0					20 mm	8 ns
TC59G1632AFB-80	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100	1	3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	7.5 ns
TC59G1632AFB-10	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0					20 mm	8 ns
TC59G1632AFB-12	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0					20 mm	9 ns
TC59G1631AFB-12	Toshiba	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.27 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0					20 mm	9 ns
KM4132G112Q-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0			.002 Amp	4,8	20 mm	6 ns
K4D261638F-LC500	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	245 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M	0 Cel	TIN BISMUTH	DUAL	1	R-PDSO-G66	3	2.625 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e6			.045 Amp	2,4,8	22.22 mm	.7 ns
KM4132G112TQ-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0			.002 Amp	4,8	20 mm	6 ns
K4D261638F-TC330	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46		DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M	0 Cel		DUAL	1	R-PDSO-G66		2.625 V	1.2 mm	300 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH		30	240	.045 Amp	2,4,8	22.22 mm	.6 ns
K4G323222M-PC55	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	183 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5 ns
KM4132G112TQ-C	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	183 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	5 ns
K4G813222B-UC70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK				.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH						20 mm	6 ns
K4J10324KG-HC140MX	Samsung	SYNCHRONOUS GRAPHICS RAM		96	BGA		UNSPECIFIED	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		32	GRID ARRAY							32MX32	32M			BOTTOM	1	X-PBGA-B96		1.9 V					1073741824 bit	1.7 V
KM432D2131TQ-G0	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	100 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4,8	20 mm	6 ns
KM432D2131TQ-G00	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	65 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	6 ns
KM4132G271BQ-H	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK				.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH/SELF REFRESH						20 mm	6 ns
K4N1G164QF-BC200	Samsung	SYNCHRONOUS GRAPHICS RAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.35 ns
K4G323222A-QC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
KM432D2131TQ-G10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	65 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	6 ns
KM432D2131TQ-G70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE				.65 mm	65 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	5.5 ns
K4G163222A-PC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK				.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	4.5 ns
KM4132G271BTQR-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25		DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.