100 DRAM 664

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT4LSDT232UDY-8	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		274 mA	2097152 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		DUAL		R-PDMA-N100				125 MHz		Not Qualified	67108864 bit						.008 Amp		6 ns
MT8LSDT6432UG-75XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		64MX32	64M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		30	235			5.4 ns
MT4LSDT232UDY-10	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		264 mA	2097152 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		DUAL		R-PDMA-N100				100 MHz		Not Qualified	67108864 bit						.008 Amp		7.5 ns
MT4VDDT3232UG-6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY					70 Cel		32MX32	32M	0 Cel		DUAL	1	R-XDMA-N100		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		30	235			.7 ns
MT4LSD232UG-10C1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words			3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N100		3.6 V				Not Qualified	67108864 bit	3 V	AUTO REFRESH						7.5 ns
MT2LSDT432UY-75	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		420 mA	4194304 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	134217728 bit			e3			.004 Amp		5.4 ns
MT8LSDT6432UY-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		64MX32	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH	e4					7.5 ns
MT2LSDT132UY-10	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		260 mA	1048576 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL		R-PDMA-N100				100 MHz		Not Qualified	33554432 bit						.004 Amp		7.5 ns
MT2LSDT132UG-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		1MX32	1M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH		30	235			7.5 ns
MT4LSDT1632UG-75XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		16MX32	16M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH						5.4 ns
MT8LSDT3232UG-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		32MX32	32M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235			7.5 ns
MT8LSDT3232UG-10	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2160 mA	33554432 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel		DUAL		R-PDMA-N100	1			100 MHz		Not Qualified	1073741824 bit						.016 Amp		7.5 ns
MT8VDDT3232UG-75E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1332 mA	33554432 words		COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel		DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	1073741824 bit						.012 Amp		.75 ns
MT45V512K32LG-65	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words	YES		2.5		32	FLATPACK, LOW PROFILE				.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH					20 mm
MT2LSDT132UY-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		1MX32	1M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e4					7.5 ns
MT4LSDT832UDG-8XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					65 Cel		8MX32	8M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0					6 ns
MT4VDDT1632UG-75Z	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1300 mA	16777216 words		COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	536870912 bit						.012 Amp		.75 ns
MT8VDDT6432UY-75XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY					70 Cel		64MX32	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e4					.75 ns
MT8LSDT3232UY-8B1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		32MX32	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e4					6 ns
MT4LSDT3232UDY-8XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					65 Cel		32MX32	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e4					6 ns
MT2LD132UG-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	100	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	340 mA	1048576 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL	1	R-XDMA-N100	1	3.6 V	25.654 mm			Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.001 Amp		60 ns
MT2LDT432UG-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	SYNCHRONOUS	330 mA	4194304 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-XDMA-N100	1	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.001 Amp		60 ns
MT8LSDT1632UG-75	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		210 mA	16777216 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	536870912 bit						.002 Amp		5.4 ns
MT8LSD432UG-10	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	100	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	500 mA	4194304 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100	16	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-XDMA-N100	1	3.6 V		100 MHz		Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				.016 Amp		7.5 ns
MT4VDDT1632UY-75	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1300 mA	16777216 words		COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	536870912 bit			e3			.012 Amp		.75 ns
MT4LSDT832UDG-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					65 Cel		8MX32	8M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0					7.5 ns
MT4VDDT3232UG-75G2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1460 mA	33554432 words		COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel		DUAL		R-PDMA-N100				133 MHz		Not Qualified	1073741824 bit						.016 Amp		.75 ns
MT8LSDT1632UG-75XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		16MX32	16M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		30	235			5.4 ns
MT8LSDT6432UG-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		64MX32	64M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		30	235			7.5 ns
MT1LSDT232UG-8C1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		2MX32	2M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	67108864 bit	3 V	AUTO REFRESH, SELF REFRESH						22 ns
MT4LSDT1632UDY-10	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		800 mA	16777216 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			100 MHz		Not Qualified	536870912 bit			e3			.008 Amp		7.5 ns
MT4LSDT1632UG-8	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1240 mA	16777216 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		DUAL		R-PDMA-N100				125 MHz		Not Qualified	536870912 bit						.008 Amp		6 ns
MT8VDDT6432UG-75EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY					70 Cel		64MX32	64M	0 Cel		DUAL	1	R-XDMA-N100		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		30	235			.75 ns
MT8VDDT3232UG-75B1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY					70 Cel		32MX32	32M	0 Cel		DUAL	1	R-XDMA-N100		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		30	235			.75 ns
MT2LD132UG-5	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N100		3.6 V				Not Qualified	33554432 bit	3 V							50 ns
MT8LSDT1632UG-8XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		16MX32	16M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH						6 ns
MT2LSDT132UG-8XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		1MX32	1M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH		30	235			6 ns
MT4VDDT3232UG-6G2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1640 mA	33554432 words		COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel		DUAL		R-PDMA-N100				167 MHz		Not Qualified	1073741824 bit						.016 Amp		.7 ns
MT4LSDT232UDG-8	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		274 mA	2097152 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		DUAL		R-PDMA-N100				125 MHz		Not Qualified	67108864 bit						.008 Amp		6 ns
MT2VDDT1632UG-6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		820 mA	16777216 words		COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		DUAL		R-PDMA-N100	1			167 MHz		Not Qualified	536870912 bit						.008 Amp		.7 ns
MT8LSDT432UG-10C1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words			3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N100		3.6 V				Not Qualified	134217728 bit	3 V	AUTO REFRESH						7.5 ns
MT8LSDT6432UG-75	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		270 mA	67108864 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	64MX32	64M	0 Cel		DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	2147483648 bit						.002 Amp		5.4 ns
MT8LSDT6432UY-75	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		270 mA	67108864 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	64MX32	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	2147483648 bit			e3			.002 Amp		5.4 ns
MT2LD132UG-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	100	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	1048576 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL	1	R-XDMA-N100	1	3.6 V	25.654 mm			Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.001 Amp		50 ns
MT8VDDT6432UY-6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		32	MICROELECTRONIC ASSEMBLY					70 Cel		64MX32	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e4					.7 ns
MT4VDDT3232UY-75	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1460 mA	33554432 words		COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	1073741824 bit			e3			.016 Amp		.75 ns
MT4LSDT1632UY-8	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1240 mA	16777216 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		DUAL		R-PDMA-N100				125 MHz		Not Qualified	536870912 bit						.008 Amp		6 ns
MT4LSDT1632UDG-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		32	MICROELECTRONIC ASSEMBLY					65 Cel		16MX32	16M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH						7.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.