100 DRAM 664

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4G323222A-PL50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
K4G323222M-QC45	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4 ns
KM4132G512Q-10/F0	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	7 ns
K4W1G1646D-EJ12	Samsung	DDR3 DRAM	OTHER	100	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	490 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B100	3	1.9 V	1.2 mm	800 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	13.3 mm
KM4132G271AQ-10	Samsung	VIDEO DRAM		100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		32	FLATPACK			.65 mm			256KX32	256K			QUAD	1	R-PQFP-G100		3.6 V	2.45 mm		14 mm	Not Qualified	8388608 bit	3 V							20 mm	10 ns
K4D623237M-QC700	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	5.5 ns
K4G323222A-PC7C	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	133 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
KM4132G512TQ-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6.5 ns
K4G163222A-PL60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5.5 ns
KM4132G512Q-6	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		310 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				166 MHz		Not Qualified	16777216 bit			e0			.002 Amp	4,8		5.5 ns
KM4132G271Q-10	Samsung	VIDEO DRAM		100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		32	FLATPACK			.65 mm			256KX32	256K			QUAD	1	R-PQFP-G100		3.6 V	2.45 mm		14 mm	Not Qualified	8388608 bit	3 V							20 mm	10 ns
K4D623238F-QC50	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	200 MHz	14 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.7 ns
K4D623238B-QC45	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	750 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	222 MHz	14 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.7 ns
KM4132G112Q-7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0			.002 Amp	4,8	20 mm	5.5 ns
K4B1G1646D-HCF70	Samsung	DDR3 DRAM	OTHER	100	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B100		1.575 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	8	13.3 mm	.4 ns
K4B1G1646D-HCF7	Samsung	DDR3 DRAM		100	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B100				400 MHz		Not Qualified	1073741824 bit						.01 Amp	8		.4 ns
K4B1G1646D-HCF7T	Samsung	DDR3 DRAM		100	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B100				400 MHz		Not Qualified	1073741824 bit						.01 Amp	8		.4 ns
K4B1G1646D-HCF80	Samsung	DDR3 DRAM	OTHER	100	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	310 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B100	3	1.575 V	1.2 mm	533 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260	.01 Amp	8	13.3 mm	.3 ns
K4B1G1646D-HCH9	Samsung	DDR3 DRAM		100	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3			667 MHz		Not Qualified	1073741824 bit			e1		260	.01 Amp	8		.255 ns
K4B1G1646D-HCH9T	Samsung	DDR3 DRAM		100	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3			667 MHz		Not Qualified	1073741824 bit			e1		260	.01 Amp	8		.255 ns
K4B1G1646D-HCH90	Samsung	DDR3 DRAM	OTHER	100	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B100	3	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1		260	.01 Amp	8	13.3 mm	.255 ns
K4B1G1646D-HCF8T	Samsung	CACHE DRAM MODULE		100	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3			533 MHz		Not Qualified	1073741824 bit			e1		260	.01 Amp	8		.3 ns
K4B1G1646D-HCF8	Samsung	DDR3 DRAM		100	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM		R-PBGA-B100	3			533 MHz		Not Qualified	1073741824 bit			e1		260	.01 Amp	8		.3 ns
MT2LSDT432UY-10	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		340 mA	4194304 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			100 MHz		Not Qualified	134217728 bit			e3			.006 Amp			7.5 ns
MT8VDDT12832UG-6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2320 mA	67108864 words			COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	64MX32	64M	0 Cel		DUAL		R-PDMA-N100				167 MHz		Not Qualified	2147483648 bit						.04 Amp			.6 ns
MT4VDDT3232UY-75XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		32	MICROELECTRONIC ASSEMBLY				70 Cel		32MX32	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		2.7 V				Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT2VDDT832UY-6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		710 mA	8388608 words			COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			167 MHz		Not Qualified	268435456 bit			e3			.006 Amp			.7 ns
MT4LDT832UG-5	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	SYNCHRONOUS	352 mA	8388608 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		DUAL	1	R-XDMA-N100	1	3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			50 ns
MT8VDDT3232UY-75E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1332 mA	33554432 words			COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	1073741824 bit			e3			.012 Amp			.75 ns
MT2LSDT132UY-8XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1048576 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				70 Cel		1MX32	1M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e4						6 ns
MT8VDDT6432UG-6	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2040 mA	67108864 words			COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	64MX32	64M	0 Cel		DUAL		R-PDMA-N100				167 MHz		Not Qualified	2147483648 bit						.032 Amp			.7 ns
MT8LSDT3232UG-10B1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				70 Cel		32MX32	32M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e0						7.5 ns
MT4LSDT1632UY-75	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		210 mA	16777216 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	536870912 bit			e3			.002 Amp			5.4 ns
MT4LSDT1632UDY-75XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				65 Cel		16MX32	16M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		30	260				5.4 ns
MT2VDDT832UY-75Z	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		660 mA	8388608 words			COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	268435456 bit			e3			.006 Amp			.75 ns
MT4LSDT1632UG-8XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				70 Cel		16MX32	16M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0						6 ns
MT4LSDT1632UDY-75	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1240 mA	16777216 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	536870912 bit			e3			.008 Amp			5.4 ns
MT8LSDT3232UY-10	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2160 mA	33554432 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			100 MHz		Not Qualified	1073741824 bit			e3			.016 Amp			7.5 ns
MT4LSDT832UG-10D1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words				3.3		32	MICROELECTRONIC ASSEMBLY				70 Cel		8MX32	8M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	268435456 bit	3 V	AUTO REFRESH							7 ns
MT8LSDT3232UG-8	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2480 mA	33554432 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M	0 Cel		DUAL		R-PDMA-N100	1			125 MHz		Not Qualified	1073741824 bit						.016 Amp			6 ns
MT4LSDT3232UDG-8XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				65 Cel		32MX32	32M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235				6 ns
MT2VDDT1632UG-75Z	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		700 mA	16777216 words			COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	536870912 bit						.008 Amp			.75 ns
MT8LSDT1632UY-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				70 Cel		16MX32	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e4						7.5 ns
MT8VDDT12832UG-75	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2240 mA	67108864 words			COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	64MX32	64M	0 Cel		DUAL		R-PDMA-N100				133 MHz		Not Qualified	2147483648 bit						.04 Amp			.75 ns
MT45V512K32RG-6	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE			.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH						20 mm
MT8LSDT3232UG-8XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				70 Cel		32MX32	32M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235				6 ns
MT4LSDT232UDY-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				70 Cel		2MX32	2M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e4						7.5 ns
MT8LSDT1632UG-8	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1680 mA	16777216 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		DUAL		R-PDMA-N100	1			125 MHz		Not Qualified	536870912 bit						.016 Amp			6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.