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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KM4132G271BQ-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	7 ns
K4D623237A-QC600	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH		30	240			20 mm	5.5 ns
KM4132G271A-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.4 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH						20 mm	7 ns
K4Y50164UE-JCC40	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	1350 mA	33554432 words		YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	28 ns
KM4132G512ATQ-6	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	166 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
K4D263238K-UC500	Samsung	GDDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	358 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M	0 Cel		QUAD	1	R-PQFP-G100	2	2.625 V	1.2 mm	250 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH				.02 Amp	2,4,8	20 mm	.7 ns
K4D263238F-UC50	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		4MX32	4M	0 Cel		QUAD	1	R-PQFP-G100		2.625 V	1.2 mm		14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						20 mm	.7 ns
KM4132G512ATQ-F6	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	166 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
K4G323222M-QC80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
K4D263238I-UC500	Samsung	GDDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		4MX32	4M	0 Cel		QUAD	1	R-PQFP-G100	2	2.625 V	1.2 mm		14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						20 mm	.7 ns
KM4132G512ATQ-7/F7	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V							20 mm	5.5 ns
KM432D2131TQ-G8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	340 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	125 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4,8	20 mm	6 ns
K4Y50024UE-JCA2T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		710 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			36 ns
KM4132G271BTQ-12	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH/SELF REFRESH						20 mm	8 ns
KM4132G512AQ-F5	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	100 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
KM4132G512Q-7/F7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	6 ns
KM4132G512ATQ-8/F8	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V							20 mm	6 ns
KM4132G271BTQ-H	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH/SELF REFRESH						20 mm	6 ns
KM4132G271AQ-7	Samsung	VIDEO DRAM		100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		32	FLATPACK			.65 mm			256KX32	256K			QUAD	1	R-PQFP-G100		3.6 V	2.45 mm		14 mm	Not Qualified	8388608 bit	3 V							20 mm	70 ns
K4D263238I-UC40	Samsung	GDDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	412 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	MATTE TIN	QUAD	1	R-PQFP-G100	1	2.625 V	1.2 mm	250 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e3			.01 Amp	2,4,8	20 mm	.6 ns
K4G163222A-PL55	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5 ns
K4G323222A-PC60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
KM4132G512TQ-F0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		210 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9	DRAMs	.5 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				100 MHz		Not Qualified	16777216 bit			e0			.002 Amp	4,8		7 ns
K4D623237M-QC600	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH						20 mm	5.5 ns
K4G323222A-QC60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
K4Y50084UE-JCA2	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		810 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			36 ns
K4D623237M-QC60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	420 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	166 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4,8	20 mm	5.5 ns
KM4132G512AQ-10	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				100 MHz		Not Qualified	16777216 bit			e0			.002 Amp	4,8		6 ns
KM432D2131TQ-G6	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	420 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	166 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4,8	20 mm	5.5 ns
K4W1G1646D-EJ11T	Samsung	CACHE DRAM MODULE	OTHER	100	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	540 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B100	3	1.9 V	1.2 mm	900 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	13.3 mm
KM4132G512AQ-6/F6	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3.135 V							20 mm	5.5 ns
KM4132G512QFO	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		210 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel		QUAD		R-PQFP-G100				100 MHz		Not Qualified	16777216 bit						.002 Amp	4,8		7 ns
K4G323222A-QC45	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4 ns
KM4132G512Q-7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
KM4132G112Q-C	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	183 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	5 ns
KM4132G112TQ-5/F5	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		1MX32	1M	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH						20 mm	4.5 ns
KM4132G512TQ-F7	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		280 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9	DRAMs	.5 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				143 MHz		Not Qualified	16777216 bit			e0			.002 Amp	4,8		6 ns
K4G813222B-PC10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	7 ns
K4D623238B-QC50	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	700 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	200 MHz	14 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.7 ns
KM4132G512ATQ-5/F5	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3.135 V							20 mm	4.5 ns
K4Y50164UE-JCB3	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1150 mA	33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B100	3					Not Qualified	536870912 bit					260	.04 Amp			35 ns
KM4132G271Q-13	Samsung	VIDEO DRAM		100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		32	FLATPACK			.65 mm			256KX32	256K			QUAD	1	R-PQFP-G100		3.6 V	2.45 mm		14 mm	Not Qualified	8388608 bit	3 V							20 mm	13 ns
KM4132G271A-12	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.4 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH						20 mm	9 ns
K4D623238B-QL60	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	620 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	166 MHz	14 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.75 ns
KM4132G271BQ-7	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		300 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				143 MHz		Not Qualified	8388608 bit			e0			.002 Amp	4,8		6 ns
KM4132G271BQ-12	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH/SELF REFRESH						20 mm	8 ns
K4Y50044UE-JCB30	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	950 mA	134217728 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	35 ns
KM4132G512TQ-7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	143 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.