100 DRAM 664

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KM4132G512TQ-6/F6	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5.5 ns
K4D263238I-QC400	Samsung	GDDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		4MX32	4M	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm		14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0					20 mm	.6 ns
KM4132G112Q-FD	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	4 ns
KM4132G512Q-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	125 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6.5 ns
K4Y50024UE-JCB3T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		910 mA	268435456 words			COMMON	1.8	1.8	2	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	256MX2	256M	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			35 ns
KM4132G112Q-7/F7	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		1MX32	1M		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH						20 mm	5.5 ns
KM4132G112TQ-5	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	4.5 ns
K4Y50084UE-JCA20	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	810 mA	67108864 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	36 ns
K4Y50044UE-JCB3	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		950 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			35 ns
K4G163222A-PL70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	5.5 ns
KM4132G512ATQ-10/F0	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V							20 mm	6 ns
K4G163222A-QL50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	4.5 ns
K4G323222A-PL7C	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	133 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
K4G323222A-QL45	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4 ns
KM4132G512Q-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	100 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	7 ns
KM4132G112Q-F5	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	4.5 ns
KM432D2131TQ-G7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	143 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	2,4,8	20 mm	5.5 ns
K4G323222A-PC45	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4 ns
KM4132G271BTQR-7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	143 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
K4G163222A-PC80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	6 ns
K4G323222A-QL50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	4.5 ns
KM4132G271BTQ-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	125 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6.5 ns
KM4132G112Q-6	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	5.5 ns
K4D623238B-QC60	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	620 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	166 MHz	14 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.75 ns
K4Y50044UE-JCA2	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		740 mA	134217728 words			COMMON	1.8	1.8	4	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	128MX4	128M	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			36 ns
KM4132G512ATQ-C/FC	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3.135 V							20 mm	5 ns
KM4132G512TQ-7/F7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	70 Cel		512KX32	512K		QUAD	1	R-PQFP-G100		3.6 V	1.2 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20 mm	6 ns
K4Y50164UE-JCC4	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1350 mA	33554432 words			COMMON	1.8	1.8	16	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			28 ns
KM4132G112TQ-FC	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	183 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0			.002 Amp	4,8	20 mm	5 ns
K4Y50084UE-JCB3T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1020 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			35 ns
KM4132G512AQ-C	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	182 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5 ns
K4G323222A-QC7C	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	133 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
KM4132G512TQ-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	100 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	7 ns
K4D263238M-QC550	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		4MX32	4M		QUAD	1	R-PQFP-G100		2.625 V	1.2 mm		14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH		30	240			20 mm	.75 ns
KM4132G512ATQ-7	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	143 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
KM4132G112Q-F7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0			.002 Amp	4,8	20 mm	5.5 ns
KM4132G112TQ-F7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0			.002 Amp	4,8	20 mm	5.5 ns
KM4132G271-15	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		190 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				66 MHz		Not Qualified	8388608 bit			e0			.003 Amp	1,2,4,8		12 ns
K4W1G1646D-EJ12T	Samsung	CACHE DRAM MODULE	OTHER	100	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	490 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		BOTTOM	1	R-PBGA-B100	3	1.9 V	1.2 mm	800 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	13.3 mm
K4Y50084UE-JCA2T	Samsung	RAMBUS DRAM	OTHER	100	BGA	32768	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		810 mA	67108864 words			COMMON	1.8	1.8	8	GRID ARRAY	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	64MX8	64M	MATTE TIN	BOTTOM		R-PBGA-B100	1					Not Qualified	536870912 bit			e3			.04 Amp			36 ns
K4G323222M-PL80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	6 ns
K4D62323HA-QC50T	Samsung	DDR1 DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		450 mA	2097152 words	2,4,8,FP		COMMON		2.5,3.3	32	FLATPACK	TQFP100,.7X.9	DRAMs	.5 mm	65 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				200 MHz		Not Qualified	67108864 bit			e0			.06 Amp	2,4,8		.75 ns
KM4132G271BQ-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	7 ns
K4D623237A-QC600	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		2MX32	2M		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH		30	240			20 mm	5.5 ns
KM4132G271A-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	LQFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX32	256K		QUAD	1	R-PQFP-G100		3.6 V	1.4 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH						20 mm	7 ns
K4Y50164UE-JCC40	Samsung	RAMBUS DRAM	OTHER	100	TFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	ASYNCHRONOUS	1350 mA	33554432 words		YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,50/32	DRAMs	.8 mm	100 Cel	3-STATE	32MX16	32M		BOTTOM	1	R-PBGA-B100		1.89 V	1.13 mm		14 mm	Not Qualified	536870912 bit	1.71 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.04 Amp		14.5 mm	28 ns
KM4132G512ATQ-6	Samsung	VIDEO DRAM	COMMERCIAL	100	TQFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.2 mm	166 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0			.002 Amp	4,8	20 mm	5.5 ns
K4D263238K-UC500	Samsung	GDDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	358 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M		QUAD	1	R-PQFP-G100	2	2.625 V	1.2 mm	250 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH				.02 Amp	2,4,8	20 mm	.7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.