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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Self Refresh	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Length	Maximum Access Time
TC59YM916AMG40B	Toshiba	RAMBUS DRAM		108	TBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	YES	1.8	16	GRID ARRAY, THIN PROFILE	1.27 mm		32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	1.86 V	1.2 mm		Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH	e1
TC59YM916AMG32A	Toshiba	RAMBUS DRAM		108	TBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	YES	1.8	16	GRID ARRAY, THIN PROFILE	1.27 mm		32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	1.86 V	1.2 mm		Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH	e1
TC59YM916AMG32B	Toshiba	RAMBUS DRAM		108	TBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	YES	1.8	16	GRID ARRAY, THIN PROFILE	1.27 mm		32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	1.86 V	1.2 mm		Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH	e1
TC59YM916AMG24A	Toshiba	RAMBUS DRAM		108	TBGA	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	YES	1.8	16	GRID ARRAY, THIN PROFILE	1.27 mm		32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	1.86 V	1.2 mm		Not Qualified	536870912 bit	1.74 V	SELF CONTAINED REFRESH	e1
HM5251325CBP-B6	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	108	BGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	YES	3.3	32	GRID ARRAY	1.27 mm	70 Cel	16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	3.6 V	2.35 mm	14 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1	22 mm	6 ns
HM5251325CBP-A6	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	108	BGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	YES	3.3	32	GRID ARRAY	1.27 mm	70 Cel	16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	3.6 V	2.35 mm	14 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1	22 mm	6 ns
HM5251325CBP-75	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	108	BGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	YES	3.3	32	GRID ARRAY	1.27 mm	70 Cel	16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	3.6 V	2.35 mm	14 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1	22 mm	6 ns
HM5212325FBP-B60	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	108	BGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4194304 words	YES	3.3	32	GRID ARRAY	1.27 mm	70 Cel	4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	3.6 V	2.1 mm	14 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1	22 mm	6 ns
HM5225645FBP-B60	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	108	BGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4194304 words	YES	3.3	64	GRID ARRAY	1.27 mm	70 Cel	4MX64	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	3.6 V	2.1 mm	14 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1	22 mm	6 ns
HM5225325FBP-B60	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	108	BGA	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	YES	3.3	32	GRID ARRAY	1.27 mm	70 Cel	8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B108	3.6 V	2.1 mm	14 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1	22 mm	6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.