112 DRAM 21

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length	Maximum Access Time
K4B1G1646C-ZCF7	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B112	3			400 MHz		Not Qualified	1073741824 bit					260	8		.4 ns
K4B1G1646C-ZCG8T	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B112				533 MHz		Not Qualified	1073741824 bit						8		.3 ns
K4B1G1646C-ZCH90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	112	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B112		1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.255 ns
K4B1G1646C-ZCF8	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B112	3			533 MHz		Not Qualified	1073741824 bit					260	8		.3 ns
K4B1G1646C-ZCF70	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	112	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B112		1.575 V	1.2 mm	400 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.4 ns
K4B1G1646C-ZCG8	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B112	3			533 MHz		Not Qualified	1073741824 bit					260	8		.3 ns
K4B1G1646C-ZCF8T	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B112				533 MHz		Not Qualified	1073741824 bit						8		.3 ns
K4B1G1646C-ZCH9T	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B112				667 MHz		Not Qualified	1073741824 bit						8		.255 ns
K4B1G1646C-ZCF80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	112	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B112		1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.3 ns
K4B1G1646C-ZCG9	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M		MATTE TIN	BOTTOM		R-PBGA-B112	1			667 MHz		Not Qualified	1073741824 bit			e3			8		.255 ns
K4B1G1646C-ZCG80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	112	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B112		1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.3 ns
K4B1G1646C-ZCG90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	112	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B112		1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	8	18 mm	.255 ns
K4B1G1646C-ZCG9T	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B112				667 MHz		Not Qualified	1073741824 bit						8		.255 ns
K4B1G1646C-ZCH9	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B112	3			667 MHz		Not Qualified	1073741824 bit					260	8		.255 ns
K4B1G1646C-ZCF7T	Samsung	DDR3 DRAM		112	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		67108864 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B112				400 MHz		Not Qualified	1073741824 bit						8		.4 ns
MT46H16M32LFT67M-N1002	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	2,4,8,16	YES	COMMON	1.8		32	UNCASED CHIP	DIE OR CHIP			85 Cel		16MX32	16M	-40 Cel		DUAL	1	R-XUUC-N112		1.95 V		200 MHz			536870912 bit	1.7 V	AUTO/SELF REFRESH				2,4,8,16
MT46H32M16LFT67MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	2,4,8,16	YES	COMMON	1.8		16	UNCASED CHIP	DIE OR CHIP			85 Cel		32MX16	32M	-40 Cel		DUAL	1	R-XUUC-N112		1.95 V		166 MHz			536870912 bit	1.7 V	AUTO/SELF REFRESH				2,4,8,16
MT46HC16M32LGT67MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	2,4,8,16	YES	COMMON	1.8		32	UNCASED CHIP	DIE OR CHIP			85 Cel		16MX32	16M	-40 Cel		DUAL	1	R-XUUC-N112		1.95 V		166 MHz			536870912 bit	1.7 V	AUTO/SELF REFRESH				2,4,8,16
MT46H32M16LFT67M-N1001	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	33554432 words	2,4,8,16	YES	COMMON	1.8		16	UNCASED CHIP	DIE OR CHIP			85 Cel		32MX16	3M	-40 Cel		DUAL	1	R-XUUC-N112		1.95 V		200 MHz			536870912 bit	1.7 V	AUTO/SELF REFRESH				2,4,8,16
MT46HC16M32LFT67MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	2,4,8,16	YES	COMMON	1.8		32	UNCASED CHIP	DIE OR CHIP			85 Cel		16MX32	16M	-40 Cel		DUAL	1	R-XUUC-N112		1.95 V		166 MHz			536870912 bit	1.7 V	AUTO/SELF REFRESH				2,4,8,16
MT46H16M32LFT67MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	16777216 words	2,4,8,16	YES	COMMON	1.8		32	UNCASED CHIP	DIE OR CHIP			85 Cel		16MX32	16M	-40 Cel		DUAL	1	R-XUUC-N112		1.95 V		166 MHz			536870912 bit	1.7 V	AUTO/SELF REFRESH				2,4,8,16

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.