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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4B1G1646C-ZCH9T |
| Description | DDR3 DRAM; No. of Terminals: 112; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; No. of Words Code: 64M; |
| Datasheet | K4B1G1646C-ZCH9T Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 64MX16 |
| Output Characteristics: | 3-STATE |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| No. of Terminals: | 112 |
| Maximum Clock Frequency (fCLK): | 667 MHz |
| No. of Words: | 67108864 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B112 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Package Code: | FBGA |
| Input/Output Type: | COMMON |
| Memory Density: | 1073741824 bit |
| Sequential Burst Length: | 8 |
| Memory IC Type: | DDR3 DRAM |
| Memory Width: | 16 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA112,11X22,32 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 8 |
| Maximum Access Time: | .255 ns |
| No. of Words Code: | 64M |
| Nominal Supply Voltage / Vsup (V): | 1.5 |
| Terminal Pitch: | .8 mm |
| Power Supplies (V): | 1.5 |
