144 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TM4EJ64NPU-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	520 mA	4194304 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.002 Amp		50 ns
TM2EJ64DPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		60 ns
TM8FJ64KPU-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	444 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		60 ns
TM2FJ64EPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	720 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		60 ns
TM2EJ64EPN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	640 mA	2097152 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		70 ns
TM2EJ64EPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		50 ns
TM8SK64JPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	200 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	28.702 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.001 Amp		7.5 ns
TM8FJ64KPU-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	524 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		50 ns
TM2SJ64EPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		100 MHz		Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH		.016 Amp		7.5 ns
TM2FJ64DPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	960 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		50 ns
TM2FJ64DPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.0012 Amp		60 ns
HYS64V8000GD-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.008 Amp		7 ns
HYS64V32220GDL-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1920 mA	33554432 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N144			133 MHz		Not Qualified	2147483648 bit				.016 Amp		5.4 ns
HYS64V64220GBDL-8-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH				6 ns
HYS64V64220GBDL-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	67108864 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N144			100 MHz		Not Qualified	4294967296 bit				.016 Amp		6 ns
HYS64V1620GCD-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1760 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N144			100 MHz		Not Qualified	1073741824 bit				.016 Amp		6 ns
HYM64V2005GCL-50	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF REFRESH				50 ns
HYM64V8005GCDL-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF REFRESH				60 ns
HYS64V8220GDL-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		560 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144			133 MHz		Not Qualified	536870912 bit				.004 Amp		5.4 ns
HYS64V64220GBDL-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1920 mA	67108864 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N144			133 MHz		Not Qualified	4294967296 bit				.016 Amp		5.4 ns
HYS64V8200GDL-7-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				5.4 ns
HYS64V8000GDL-10	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		600 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144		25.4 mm	100 MHz		Not Qualified	536870912 bit				.008 Amp		7 ns
HYS64V32220GCDL-8-C	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				6 ns
HYB18RL28809AC-2.5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			1.8		9	GRID ARRAY, THIN PROFILE			1 mm			32MX9	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH			18.5 mm
HYS64V16200GDL-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		960 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N144			133 MHz		Not Qualified	1073741824 bit				.008 Amp		5.4 ns
HYS64V16220GDL-8-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				6 ns
HYB18T256321F-22	Infineon Technologies	DDR3 DRAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1		11 mm	.45 ns
HYS64V8000GCD-10	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	31.75 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.008 Amp		8 ns
HYM64V2005GC-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		2MX64	2M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS REFRESH				60 ns
HYS64V32220GDL-7	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1920 mA	33554432 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N144			133 MHz		Not Qualified	2147483648 bit				.016 Amp		5.4 ns
HYS64V32220GDL-8-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	680 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		.008 Amp		6 ns
HYM64V4005GCL-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF REFRESH				60 ns
HYB18T256324F-22	Infineon Technologies	SYNCHRONOUS GRAPHICS RAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144	2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH			11 mm	.45 ns
HYB18RL28836AC-3.3	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words			1.8		36	GRID ARRAY, THIN PROFILE			1 mm			8MX36	8M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH			18.5 mm
HYS64V8000GD-10	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	8388608 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.008 Amp		8 ns
HYS64V32220GDL-7.5-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	920 mA	33554432 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		.008 Amp		5.4 ns
HYS64V64220GBDL-7-D	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	67108864 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V		143 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		.016 Amp		5.4 ns
HYS64V16220GDL-8-X	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				6 ns
HYM64V1005GCDL-60	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	144	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words	YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V	25.4 mm			Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF REFRESH				60 ns
HYS64V32220GCDL-7.5	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	33554432 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N144			133 MHz		Not Qualified	2147483648 bit				.008 Amp		5.4 ns
HYS64V4200GDL-8-X	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				6 ns
HYS64V16221GDL-8-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				6 ns
HYS64V4200GDL-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		520 mA	4194304 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL		R-PDMA-N144			100 MHz		Not Qualified	268435456 bit				.004 Amp		6 ns
HYB18T256321F-20	Infineon Technologies	DDR3 DRAM	OTHER	144	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	2.1 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1		11 mm	.4 ns
HYS64V32220GCDL-7.5-X	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				5.4 ns
HYS64V8000GCDL-8	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		880 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N144		31.75 mm	100 MHz		Not Qualified	536870912 bit				.008 Amp		6 ns
HYS64V32220GDL-7.5-XX	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				5.4 ns
HYS64V32220GBDL-8-C2	Infineon Technologies	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.