144 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
THL64V8015BTG-4S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	536870912 bit	3.13 V					.0016 Amp			40 ns
THLG645111AFG-12	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		450 mA	524288 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX64	512K		DUAL		R-PDMA-N144			83 MHz		Not Qualified	33554432 bit						.004 Amp			9 ns
THLY648031BFG-10L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V	30.48 mm	100 MHz		Not Qualified	536870912 bit	3 V					.008 Amp			7 ns
THLY648031BFG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V	30.48 mm	125 MHz		Not Qualified	536870912 bit	3 V					.008 Amp			6 ns
TC59LM836DKG-30	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS	850 mA	8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M		BOTTOM	1	R-PBGA-B144	2.625 V	1.2 mm	333 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	18.5 mm	.5 ns
THLY6480H1FG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							5.4 ns
THL64V4075ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH							50 ns
THLY724031BFG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	700 mA	4194304 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX72	4M		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	301989888 bit	3 V					.005 Amp			6 ns
THLY648051FG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	720 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-X144	3.6 V	25.4 mm	125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
TC59LM836DMB-30	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	TIN LEAD	BOTTOM	1	R-PBGA-B144	2.625 V	1.2 mm	250 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0				2,4	18.5 mm	.5 ns
THLY25N01B80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
THLY641651FG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		ZIG-ZAG	1	R-XZMA-N144	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH							6 ns
THL64V8035BTG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	536870912 bit	3.13 V								40 ns
THLY641681FG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY			.8 mm	70 Cel		16MX64	16M		DUAL	1	R-XDMA-X144	3.6 V	26.67 mm		3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH						67.6 mm	6 ns
THLY12N01A70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1360 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	3.6 V		143 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
THLY25N01B75L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
THLY12N11B75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.004 Amp			5.4 ns
THLY12N11B80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
THLY648031FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1		NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		ZIG-ZAG	1	R-XZMA-N144	3.45 V				Not Qualified	536870912 bit	3.15 V	AUTO/SELF REFRESH							8.5 ns
TC59LM836DKB-30	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		8MX36	8M	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B144	2.625 V	1.2 mm		11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					18.5 mm	.5 ns
THLY6480X1MG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY			.5 mm	70 Cel		8MX64	8M		ZIG-ZAG	1	R-XZMA-N144	3.6 V	30 mm		3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH						38 mm	6 ns
THLY648031BFG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V	30.48 mm	125 MHz		Not Qualified	536870912 bit	3 V					.008 Amp			6 ns
THL64V4095BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	268435456 bit	3.13 V								40 ns
THL64V4075BTG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	268435456 bit	3.13 V								50 ns
THL64V8015ATG-5	Toshiba	EDO DRAM MODULE	COMMERCIAL	144		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	8MX64	8M		ZIG-ZAG	1	R-XZMA-N144	3.47 V				Not Qualified	536870912 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							50 ns
THLY641691FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1200 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-X144	3.6 V	26.67 mm	100 MHz	3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp		67.6 mm	7 ns
THLY641691FG-10L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1200 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-X144	3.6 V	26.67 mm	100 MHz	3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp		67.6 mm	7 ns
THL64V4075ATG-4S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH							40 ns
THLY25N01C75L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
THLY64N11A75L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	133 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp			5.4 ns
THLY6480H1FG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
THLY644031BFG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	125 MHz		Not Qualified	268435456 bit	3 V					.001 Amp			6 ns
THLY12N01A70L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1360 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	3.6 V		143 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
THLY648021BFG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	760 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	536870912 bit	3 V					.002 Amp			6 ns
THLY12N11C75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	16777216 words		YES	COMMON	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	1.27 mm	70 Cel	3-STATE	16MX16	16M		DUAL	1	R-XDMA-N144	3.6 V	25.53 mm	133 MHz	2.8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH; WD-MAX				.004 Amp		133.35 mm	5.4 ns
THLY64N11A80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	125 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
THLY641641FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	740 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M		ZIG-ZAG	1	R-XZMA-N144	3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH				.008 Amp			7 ns
THLY6480H1FG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
TC59LM836DKG-33	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS	800 mA	8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M		BOTTOM	1	R-PBGA-B144	2.625 V	1.2 mm	300 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	18.5 mm	.5 ns
THL64V4075ATG-5S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1		NO LEAD	ASYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH							50 ns
THLY25N01C80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
THLY25N01B80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
THLY648031BFG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V	30.48 mm	100 MHz		Not Qualified	536870912 bit	3 V					.008 Amp			7 ns
THLG641021AFG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		620 mA	1048576 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		DUAL		R-PDMA-N144			100 MHz		Not Qualified	67108864 bit						.008 Amp			8 ns
THL64V8015BTG-5S	Toshiba	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.47 V				Not Qualified	536870912 bit	3.13 V					.0016 Amp			50 ns
TC59LM836DMB-40	Toshiba	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	TIN LEAD	BOTTOM	1	R-PBGA-B144	2.625 V	1.2 mm	200 MHz	11 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0				2,4	18.5 mm	.6 ns
THLY641691FG-80L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1440 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-X144	3.6 V	26.67 mm	125 MHz	3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp		67.6 mm	6 ns
THLY641681FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY			.8 mm	70 Cel		16MX64	16M		DUAL	1	R-XDMA-X144	3.6 V	26.67 mm		3.8 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH						67.6 mm	7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.