144 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
M965G5115AQ0-C60	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		524288 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		512KX64	512K		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH							5.5 ns
M464S0924DTS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	1	3.6 V	25.4 mm	133 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
K4D263238E-GC220	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M		BOTTOM	1	S-PBGA-B144		2.94 V	1.4 mm		12 mm	Not Qualified	134217728 bit	2.66 V	AUTO/SELF REFRESH						12 mm	.55 ns
K4D26323QG-GC250	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	475 mA	4194304 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M		BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm	400 MHz	12 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	2,4,8	12 mm	.45 ns
KMM466S1724BT2-G0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH							7 ns
KMM965G112AQN-G8	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		ZIG-ZAG	1	R-XZMA-N144		3.6 V		125 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
KMM466F213CS2-L5	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	2097152 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N144		3.6 V	25.4 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH				.0016 Amp			50 ns
K4D263238K-VC40	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		402 mA	4194304 words	2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	TIN SILVER COPPER	BOTTOM		S-PBGA-B144	3			250 MHz		Not Qualified	134217728 bit			e1		260	.02 Amp	2,4,8		.6 ns
K4D26323QG-GC25T	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		475 mA	4194304 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M		BOTTOM		S-PBGA-B144				400 MHz		Not Qualified	134217728 bit						.01 Amp	2,4,8		.45 ns
M463S0924DT1-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	1	3.6 V	29.9974 mm	133 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
M464S1654ETS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	720 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
K4D553238E-EC500	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M		BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm		12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH						12 mm	.7 ns
M966G5115AQ0-C60	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		524288 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		512KX64	512K		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH							5.5 ns
KMM466F803CS2-L-6	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF/HIDDEN REFRESH				.0016 Amp			60 ns
M466S0404AT0-L100	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		600 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M		DUAL		R-PDMA-N144				100 MHz		Not Qualified	268435456 bit						.008 Amp			7 ns
M464S1724BT1-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	960 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
KMM965G112APN-G8	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	600 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		ZIG-ZAG	1	R-XZMA-N144		3.6 V		125 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
K4J55323QF-GC14T	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		1060 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144				700 MHz		Not Qualified	268435456 bit						.14 Amp	4		.26 ns
KMM466F803CS2-L-5	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/SELF/HIDDEN REFRESH				.0016 Amp			50 ns
M466S0824CT2-L100	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144			29.21 mm	100 MHz		Not Qualified	536870912 bit						.008 Amp			7 ns
M464S0424FTS-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	500 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N144	1	3.6 V	25.4 mm	100 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
K4J55323QF-VC160	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	970 mA	8388608 words	4	YES	COMMON	2	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	2	2.1 V	1.4 mm	600 MHz	12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1			.135 Amp	4	12 mm	.29 ns
K4D553235F-VC2A0	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	342 mA	8388608 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	1.9 V	1.4 mm	300 MHz	12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1				2,4,8	12 mm	.55 ns
K4D263238G-VC2A0	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B144	2	2.625 V	1.4 mm		12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e1	40	260			12 mm	.55 ns
KMM966G256BPN-G7	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		262144 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		256KX64	256K		ZIG-ZAG	1	R-XZMA-N144		3.6 V				Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH							6 ns
M464S6453DKS-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.032 Amp			6 ns
M463S1654DT1-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	760 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
M464S0924BT1-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	840 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		ZIG-ZAG	1	R-XZMA-N144	1	3.6 V	25.4 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
M966G0125AQ0-C70	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		DUAL	1	R-XDMA-N144		3.6 V		143 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.5 ns
M463S3254DK1-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.016 Amp			6 ns
KMM965G511APN-G8	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	400 mA	524288 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX64	512K		ZIG-ZAG	1	R-XZMA-N144		3.6 V		125 MHz		Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
KMM466S104CT-FL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	460 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
K4D553238F-JC2A0	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M		BOTTOM	1	S-PBGA-B144		2.9 V	1.4 mm		12 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		30	240			12 mm	.6 ns
K4D623238B-GL45	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	800 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	2MX32	2M	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm	222 MHz	12 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.065 Amp	2,4,8	12 mm	.7 ns
M464S3254BT1-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	980 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
KMM464S1724BT1-FL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	960 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
M464S6453CKS-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.032 Amp			6 ns
K4J55323QF-GC14	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		1060 mA	8388608 words	4		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				700 MHz		Not Qualified	268435456 bit			e0			.14 Amp	4		.26 ns
K4D623238B-GL33	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1050 mA	2097152 words	2,4,8,FP	YES	COMMON	2.8	2.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	2MX32	2M	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.94 V	1.4 mm	300 MHz	12 mm	Not Qualified	67108864 bit	2.66 V	AUTO/SELF REFRESH	e0			.075 Amp	2,4,8	12 mm	.6 ns
KMM965G511APN-G5	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	540 mA	524288 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX64	512K		ZIG-ZAG	1	R-XZMA-N144		3.6 V		200 MHz		Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				.004 Amp			4.5 ns
K4J55323QF-GC12	Samsung	GDDR3 DRAM	OTHER	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		1030 mA	8388608 words	4		COMMON	1.9	1.9	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	Tin/Lead (Sn/Pb)	BOTTOM		S-PBGA-B144				800 MHz		Not Qualified	268435456 bit			e0			.085 Amp	4		.23 ns
M464S6453CKS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1840 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M		DUAL	1	R-XDMA-N144		3.6 V		133 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.032 Amp			5.4 ns
M464S3323CN0-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
M463S3254DK1-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	880 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.016 Amp			6 ns
KMM466S804AT-F8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		860 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144			31.75 mm	125 MHz		Not Qualified	536870912 bit						.016 Amp			6 ns
K4D553238F-JC360	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M		BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm		12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH		30	240			12 mm	.6 ns
K4D55323QF-VC33	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	4		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144	3			300 MHz		Not Qualified	268435456 bit					260				.55 ns
M463S1654DT1-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.