144 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KMM466S804AT2-F0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	720 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144		3.6 V	29.21 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.016 Amp			7 ns
K4J55323QF-GL200	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	950 mA	8388608 words	4	YES	COMMON	1.8	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm	500 MHz	12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0			.13 Amp	4	12 mm	.35 ns
KMM965G512BQN-G8	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	1024	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	630 mA	524288 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX64	512K		ZIG-ZAG	1	R-XZMA-N144		3.6 V		125 MHz		Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6.5 ns
K4D55323QF-GC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M		BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH						12 mm	.55 ns
M966G0115MQ0-C70	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	460 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		DUAL	1	R-XDMA-N144		3.6 V		143 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.004 Amp			5.5 ns
M464S6453J60-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1504 mA	67108864 words		YES	COMMON	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M		DUAL	1	R-XDMA-N144	3	3.6 V	31.75 mm	133 MHz	3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX			260	.032 Amp		67.6 mm	5.4 ns
K4D26323QG-VC250	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	475 mA	4194304 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	1.9 V	1.4 mm	400 MHz	12 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	2,4,8	12 mm	.45 ns
M464S3254BT1-L1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	980 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
K4D263238E-GC2A0	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M		BOTTOM	1	S-PBGA-B144		2.94 V	1.4 mm		12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						12 mm	.55 ns
K4C89093AF-GCF50	Samsung	DDR1 DRAM	COMMERCIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		9	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		32MX9	32M	TIN LEAD	BOTTOM	1	R-PBGA-B144		2.625 V	1.2 mm		10 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					15.5 mm	.6 ns
M464S0924ETS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	1	3.6 V	31.75 mm	133 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
K4D263238I-VC50	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	344 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	200 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e1		260	.011 Amp	2,4,8	12 mm	.7 ns
K4D26323QG-VC2AT	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		440 mA	4194304 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M		BOTTOM		S-PBGA-B144				350 MHz		Not Qualified	134217728 bit						.01 Amp	2,4,8		.55 ns
KMM466F803AS2-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1120 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144						Not Qualified	536870912 bit						.0024 Amp			60 ns
K4D553235F-VC200	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.1 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1					12 mm	.35 ns
K4D553238F-JC2A	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8		COMMON	2.8	2.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM		S-PBGA-B144				350 MHz		Not Qualified	268435456 bit			e0				2,4,8		.6 ns
M464S0924DTS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	800 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	1	3.6 V	25.4 mm	133 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns
K4D553238F-EC40	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144	3			250 MHz		Not Qualified	268435456 bit					260		2,4,8		.6 ns
KMM966G112QN-G7	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	630 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		ZIG-ZAG	1	R-XZMA-N144		3.6 V		143 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
KMM965G511PN-G7	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	560 mA	524288 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX64	512K		ZIG-ZAG	1	R-XZMA-N144		3.6 V		143 MHz		Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
M464S3254DTS-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	920 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144		3.6 V		133 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			5.4 ns
KMM464S924BT1-GH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
KMM466S803AT-F8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1360 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144			31.75 mm	125 MHz		Not Qualified	536870912 bit						.016 Amp			6 ns
M464S6453BK0-L75	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M		DUAL	1	R-XDMA-N144		3.6 V		133 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.038 Amp			5.4 ns
KMM466F804AS1-L5	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		604 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144						Not Qualified	536870912 bit						.0024 Amp			50 ns
KMM464S824DT1-FH	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH							6 ns
KMM466S824AT2-F8	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		860 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144			29.21 mm	125 MHz		Not Qualified	536870912 bit						.016 Amp			6 ns
K4D553235F-VC25	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		368 mA	8388608 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M		BOTTOM		S-PBGA-B144	3			400 MHz		Not Qualified	268435456 bit					260		2,4,8		.45 ns
M464S0424ETS-LIL	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		4MX64	4M		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH							6 ns
M965G0115MQ0-C70	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	460 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		DUAL	1	R-XDMA-N144		3.6 V		143 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.004 Amp			5.5 ns
M464S3254BT1-L1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	980 mA	33554432 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX64	32M		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH				.016 Amp			6 ns
KMM466S823AT-F2	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		920 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144			31.75 mm	83 MHz		Not Qualified	536870912 bit						.016 Amp			8 ns
K4D26323QG-VC33T	Samsung	GDDR1 DRAM	COMMERCIAL	144	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	BALL		410 mA	4194304 words	2,4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M		BOTTOM		S-PBGA-B144				300 MHz		Not Qualified	134217728 bit						.01 Amp	2,4,8		.55 ns
K4D263238A-GC50	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	690 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm	200 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0			.065 Amp	2,4,8	12 mm	.7 ns
M464S0924CT1-C1L	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	840 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	1	3.6 V	25.4 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp			6 ns
KMM466F203BS1-L7	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		640 mA	2097152 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		DUAL		R-PDMA-N144						Not Qualified	134217728 bit						.0024 Amp			70 ns
M464S6453BK0-L7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M		DUAL	1	R-XDMA-N144		3.6 V		133 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.038 Amp			5.4 ns
M464S0824FTS-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	620 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	1	3.6 V		100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.008 Amp			6 ns
KMM466F104BT1-L6	Samsung	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	440 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN /SELF REFRESH				.0008 Amp			60 ns
K4D553238E-JC33	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm	300 MHz	12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH	e0				2,4,8	12 mm	.6 ns
M464S1724ETS-C7A	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	920 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.016 Amp			5.4 ns
KMM466S823AT2-F2	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		920 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144			29.21 mm	83 MHz		Not Qualified	536870912 bit						.016 Amp			8 ns
M464S6453BK0-C1H	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1920 mA	67108864 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX64	64M		DUAL	1	R-XDMA-N144		3.6 V		100 MHz		Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.038 Amp			6 ns
KMM466S823AT2-F0	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL		R-PDMA-N144			29.21 mm	100 MHz		Not Qualified	536870912 bit						.016 Amp			7 ns
K4D263238E-VC25	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1210 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M		BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	400 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH			260	.11 Amp	2,4,8	12 mm	.55 ns
KMM965G112QN-G6	Samsung	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	690 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M		ZIG-ZAG	1	R-XZMA-N144		3.6 V		166 MHz		Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.5 ns
K4D553238E-JC360	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M		BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm		12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH						12 mm	.6 ns
M464S1724CT1-L75	Samsung	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1000 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	1	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH				.008 Amp			5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.