18 DRAM 643

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM41C4000BSLP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	70 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0001 Amp	22.02 mm	80 ns
LH2464-10	Sharp Corporation	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				23 mm	100 ns
MB81256-10	Fujitsu Semiconductor America	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		1	CHIP CARRIER				70 Cel	3-STATE	256KX1	256K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						100 ns
MB81256-12	Fujitsu Semiconductor America	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		1	CHIP CARRIER				70 Cel	3-STATE	256KX1	256K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						120 ns
MB8264A-15	Fujitsu Semiconductor America	PAGE MODE DRAM	COMMERCIAL	18	QCCN	128	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		1	CHIP CARRIER				70 Cel	3-STATE	64KX1	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH						150 ns
TMS4256-15FME	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words			5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.446 mm	150 ns
TMX4C1024-15N	Texas Instruments	FAST PAGE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V						22.48 mm	150 ns
SMJ4464-12FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	120 ns
SMJ4416-15JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	150 ns
5962-9062201MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V	3.93 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				22.86 mm	120 ns
5962-9062203MTX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V	4.44 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					23.085 mm	80 ns
SMJ4464-20FVL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	200 ns
TMS4464-20FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.446 mm	200 ns
5962-01-231-3789	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD		R-XQCC-N18				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
SMJ4C1024-10JD	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.606 mm	100 ns
TMS4C1025-15N	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL		R-PDIP-T18				Not Qualified	1048576 bit								150 ns
SMJ4164-15FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	150 ns
SMJ4464-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	150 ns
TMS4C1027-12N	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	22.48 mm	120 ns
TMS4464-10NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.48 mm	100 ns
TMS4C1025N-15	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL		R-PDIP-T18				Not Qualified	1048576 bit								150 ns
SMJ4464-15FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	150 ns
TMS4256-10FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.446 mm	100 ns
SMJ4464-12JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		22.606 mm	120 ns
TMS4256-20FME	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words			5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.446 mm	200 ns
5962-9061703MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		262144 words			5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					100 ns
SMJ4416-12FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	120 ns
TMS4C1027-15NL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.48 mm	150 ns
TMS4050-1JDL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			250 ns
TMS4050-1NL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			250 ns
SMJ44100-80JDBM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	85 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	22.86 mm	80 ns
TMS4257-15FME	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words			5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.446 mm	150 ns
M38510/24902BVA	Texas Instruments	PAGE MODE DRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	CMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		1024 words			5		1	IN-LINE				125 Cel		1KX1	1K	-55 Cel		DUAL	1	R-XDIP-T18	5.5 V			Not Qualified	1024 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						100 ns
SMJ44100-12JDBM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	70 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	22.86 mm	120 ns
TMS4C1025-12N	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	22.48 mm	120 ns
SMJ4164-20FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	200 ns
5962-01-266-1459	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel		QUAD		R-XQCC-N18				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns
SMJ4164-12FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.32 mm	120 ns
TMS4C1025-10NL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.48 mm	100 ns
TMS4C1024-12N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	22.48 mm	120 ns
SMJ44100-15JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel		DUAL	1	R-CDIP-T18	5.5 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS REFRESH					22.606 mm	150 ns
TMS4416-15FPL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	0 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.5 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	150 ns
TMS4050-2JDL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
TMS4050JL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
SMJ4256-20FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel		QUAD	1	R-CQCC-N18	5.25 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.32 mm	200 ns
TMS4050JR	Texas Instruments		OTHER	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		80 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-55 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
TMS4257-12FML	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.446 mm	120 ns
TMS4256-10FME	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words			5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.446 mm	100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.