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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
SMJ4464-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		22.606 mm	200 ns
TMS4C1024-15NL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		22.48 mm	150 ns
TMS4051JL	Texas Instruments		COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		50 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel	DUAL		R-XDIP-T18				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED			300 ns
TMS1103NC	Texas Instruments		OTHER	18	DIP	32	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			1024 words		SEPARATE			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel		1KX1	1K	-25 Cel	DUAL		R-PDIP-T18				Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED			300 ns
SMJ4164-20FGL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		1	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				12.32 mm	200 ns
TMS4063JL	Texas Instruments		COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	1024 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel		1KX1	1K	0 Cel	DUAL		R-XDIP-T18				Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED
TMS4051-1NL	Texas Instruments		COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		54 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel	DUAL		R-PDIP-T18				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED			250 ns
TMS4132-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			32768 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	32KX1	32K	0 Cel	DUAL		R-XDIP-T18				Not Qualified	32768 bit							200 ns
SM4C1024-10JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL		R-XDIP-T18				Not Qualified	1048576 bit							100 ns
TMX4C1027-15N	Texas Instruments	STATIC COLUMN DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V					22.48 mm	150 ns
TMS4C1025-80N	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	22.48 mm	80 ns
SMJ44100-10JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	80 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.4	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	DUAL	1	R-CDIP-T18	5.5 V	3.56 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	22.606 mm	100 ns
TMS4161-15FML	Texas Instruments	VIDEO DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS	95 mA	65536 words			5		1	CHIP CARRIER	LDCC22,.33X.53	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	QUAD	2	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT	NOT SPECIFIED	NOT SPECIFIED	.02 Amp	12.446 mm	150 ns
SMJ4164-20FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel	QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.32 mm	200 ns
SMJ4416-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		22.606 mm	150 ns
TMS4051NL	Texas Instruments		COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		50 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel	DUAL		R-PDIP-T18				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED			300 ns
TMS4C1024-15N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		55 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL		R-PDIP-T18				Not Qualified	1048576 bit					.003 Amp		150 ns
M38510/24904BVA	Texas Instruments	PAGE MODE DRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	CMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		1024 words			5		1	IN-LINE				125 Cel		1KX1	1K	-55 Cel	DUAL	1	R-XDIP-T18	5.5 V			Not Qualified	1024 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					150 ns
TMS4C1025-10N	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		22.48 mm	100 ns
TMS1103JL	Texas Instruments		COMMERCIAL	18	DIP	32	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		59 mA	1024 words		SEPARATE			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel		1KX1	1K	0 Cel	DUAL		R-XDIP-T18				Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED			300 ns
TMS4063NL	Texas Instruments		COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		30 mA	1024 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel		1KX1	1K	0 Cel	DUAL		R-PDIP-T18				Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED
SMJ4164-15FGL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		1	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH				12.32 mm	150 ns
TMS4C1024-80N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	22.48 mm	80 ns
SMJ4C1024-80JD	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDIP-T18	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				22.606 mm	80 ns
TMX4C1029-15N	Texas Instruments	NIBBLE MODE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V					22.48 mm	150 ns
TMS4050-1JL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel	DUAL		R-XDIP-T18				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED			250 ns
SMJ4C1024-10JDM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDIP-T18	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH	NOT SPECIFIED	NOT SPECIFIED	.003 Amp	22.606 mm	100 ns
SMJ4464-15FVL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				12.32 mm	150 ns
SMJ4464-20FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				12.32 mm	200 ns
SMJ4164-15FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel	QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.32 mm	150 ns
TMS4164-20FPL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.5 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		10.795 mm	200 ns
SMJ4416-12FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		10.795 mm	120 ns
SMJ44100-10JDBM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	80 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	22.86 mm	100 ns
SMJ4464-15JDS	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		22.606 mm	150 ns
SMJ4164-15FGM	Texas Instruments	PAGE MODE DRAM	MILITARY	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	QUAD		R-XQCC-N18				Not Qualified	65536 bit			NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS4257-12FME	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words			5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				12.446 mm	120 ns
TMS4257-10FML	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.446 mm	100 ns
SMJ4416-12JDS	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		22.606 mm	120 ns
SMJ4416-15FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		10.795 mm	150 ns
TMS4C1024-12NL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				22.48 mm	120 ns
TMS4132-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			32768 words		SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	32KX1	32K	0 Cel	DUAL		R-XDIP-T18				Not Qualified	32768 bit							150 ns
5962-01-303-3553	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	DUAL		R-XDIP-T18				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED			150 ns
TMS4257-15FML	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.446 mm	150 ns
TMS4256-20FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm	7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED		12.446 mm	200 ns
SMJ4416-20JDS	Texas Instruments	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED		22.606 mm	200 ns
TMS4464-15JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	DUAL		R-XDIP-T18				Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED			150 ns
TMX4C1025-10N	Texas Instruments	NIBBLE MODE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm		3-STATE	1MX1	1M		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V					22.48 mm	100 ns
TMS4050JDL	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			4096 words		COMMON			1	IN-LINE	DIP18,.3	Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel	DUAL		R-XDIP-T18				Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED			300 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.