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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
TM4257EC4-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5		4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		150 ns
TM4256EC4-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		120 ns
TMS4060-1NL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		250 ns
TMS4030JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TM4256FC1-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	SEPARATE	5		1	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		200 ns
TM4256EC4-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		150 ns
TM4256EC4-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		200 ns
TM4257FC1-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	SEPARATE	5		1	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		200 ns
5962-01-130-4023	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TM4164EC4-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	SEPARATE	5		4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		200 ns
TMS4030-2JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
TM4257EC4-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5		4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		200 ns
SMC4060JR	Texas Instruments		OTHER	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4KX1	4K	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TMS4062NL	Texas Instruments		COMMERCIAL	22	DIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		30 mA	1024 words	COMMON			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel		1KX1	1K	0 Cel		DUAL		R-PDIP-T22				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED
TMS4060JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TM4256HE4-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS	78 mA	524288 words	SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	512KX4	512K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		120 ns
TMS4062JL	Texas Instruments		COMMERCIAL	22	DIP	1024	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	1024 words	COMMON			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel		1KX1	1K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED
5962-01-064-1311	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TMS4161-15FME	Texas Instruments	VIDEO DRAM	INDUSTRIAL	22	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		QUAD	2	R-PQCC-J22	5.5 V	3.53 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT				12.445 mm	150 ns
TMS4030-1JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		250 ns
TM4256FC1-10L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	SEPARATE	5		1	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		100 ns
TMS4030-2NL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
5962-01-048-5199	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TM4256HE4-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS	58 mA	524288 words	SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	512KX4	512K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		200 ns
SMC4030JR	Texas Instruments		OTHER	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4KX1	4K	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TMS4060-2JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
TM4257FC1-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	SEPARATE	5		1	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		120 ns
TMS4060-1JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		250 ns
TMS4060-2NL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
TMS4030JR	Texas Instruments		OTHER	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		80 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4KX1	4K	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
5962-01-037-2094	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		250 ns
TM4256HE4-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS	68 mA	524288 words	SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	512KX4	512K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4060NL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TM4164EC4-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	SEPARATE	5		4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		150 ns
TM4256FC1-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	SEPARATE	5		1	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		150 ns
TM4256FC1-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	SEPARATE	5		1	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		120 ns
TM4257EC4-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5		4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		120 ns
TMS4030-1NL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		250 ns
TMS4161-20FME	Texas Instruments	VIDEO DRAM	INDUSTRIAL	22	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		QUAD	2	R-PQCC-J22	5.5 V	3.53 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT				12.445 mm	200 ns
TM4256EC4-10L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words	SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		100 ns
TMS4060JR	Texas Instruments		OTHER	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		80 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4KX1	4K	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TM4164EC4-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words	SEPARATE	5		4	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		120 ns
TM4257FC1-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	SEPARATE	5		1	MICROELECTRONIC ASSEMBLY	SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		SINGLE	1	R-XSMA-T22	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4030NL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		60 mA	4096 words	SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
MC-411000A1A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS					1048576 words	SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0				120 ns
MC-411000A1A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS					1048576 words	SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0				150 ns
MC-41256A4C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		CERAMIC		NO		MOS					262144 words	SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0				150 ns
MC-41256A4A-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS					262144 words	SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0				100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.