Texas Instruments - TMS4161-20FME

  1. Home
  2. Texas Instruments - TMS4161-20FME
TMS4161-20FME by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TMS4161-20FME
Description VIDEO DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 22; Package Code: QCCJ; Refresh Cycles: 256; Package Shape: RECTANGULAR;
Datasheet TMS4161-20FME Datasheet
In Stock2,628
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 64KX1
Output Characteristics: 3-STATE
Maximum Seated Height: 3.53 mm
Access Mode: PAGE
Minimum Supply Voltage (Vsup): 4.5 V
Surface Mount: YES
No. of Terminals: 22
No. of Words: 65536 words
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
Technology: NMOS
JESD-30 Code: R-PQCC-J22
Package Shape: RECTANGULAR
Terminal Form: J BEND
Operating Mode: ASYNCHRONOUS
Maximum Operating Temperature: 85 Cel
Package Code: QCCJ
Width: 7.366 mm
No. of Ports: 2
Memory Density: 65536 bit
Memory IC Type: VIDEO DRAM
Minimum Operating Temperature: -40 Cel
Memory Width: 1
No. of Functions: 1
Qualification: Not Qualified
Refresh Cycles: 256
Length: 12.445 mm
Maximum Access Time: 200 ns
No. of Words Code: 64K
Nominal Supply Voltage / Vsup (V): 5
Additional Features: RAS ONLY REFRESH; 256 X 1 SAM PORT
Terminal Pitch: 1.27 mm
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 5.5 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,628 - -

Popular Products

Category Top Products

IS42S16800F-6TLI-TR by Integrated Silicon Solution

IS42S16800F-6TLI-TR

Integrated Silicon Solution

IS42S16800F-6TLI-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85 °C operating temp. Ideal for industrial applications requiring high-speed memory access in a small outline package.
IS42S16320D-7TLI by Integrated Silicon Solution

IS42S16320D-7TLI

Integrated Silicon Solution

IS42S16320D-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications requiring fast access time of 5.4ns and memory density of 536MB in a small outline package.
KVR16S11S8/4 by Kingston Technology Company

KVR16S11S8/4

Kingston Technology Company

Kingston's KVR16S11S8/4 DDR DRAM Module features 512MX64 organization, 1.5V nominal voltage, and operates synchronously. Ideal for applications requiring a memory width of 64 bits and a memory density of 34359738368 bits, such as servers or high-performance computing systems.
MT48LC4M32B2P-6:G by Micron Technology

MT48LC4M32B2P-6:G

Micron Technology

Micron Technology's MT48LC4M32B2P-6:G is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density in a small outline package.
MT48H32M16LFB4-6IT:C by Micron Technology

MT48H32M16LFB4-6IT:C

Micron Technology

Micron Technology's MT48H32M16LFB4-6IT:C is a DDR DRAM with 32MX16 organization, operating at 166 MHz. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and low power consumption.
K4B1G1646G-BCH9 by Samsung

K4B1G1646G-BCH9

Samsung

Samsung's K4B1G1646G-BCH9 DDR3 DRAM features 64MX16 organization, 667 MHz clock frequency, and 67108864 words capacity. Ideal for high-performance applications requiring fast memory access and data processing with a max standby current of 0.01 Amp.
AS4C512M16D3LC-12BCNTR by Alliance Memory

AS4C512M16D3LC-12BCNTR

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at up to 800 MHz. Featuring common I/O type and self-refresh mode, it offers 8192 refresh cycles and supports multi-bank page burst access. Ideal for applications requiring high-speed synchronous memory with low power consumption.
M378T2863RZS-CE6 by Samsung

M378T2863RZS-CE6

Samsung

Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
D2516ECMDXGJDI-U by Kingston Technology Company

D2516ECMDXGJDI-U

Kingston Technology Company

Kingston's D2516ECMDXGJDI-U is a DDR3L DRAM with 256MX16 organization, 1.35V supply voltage, and 95°C max operating temp. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and common I/O type for efficient data processing in thin profile grid array packages.
IS43DR16160A-3DBLI by Integrated Silicon Solution

IS43DR16160A-3DBLI

Integrated Silicon Solution

IS43DR16160A-3DBLI by Integrated Silicon Solution is a 16MX16 DDR2 DRAM with 333 MHz clock frequency. It operates at 1.8V, has 84 terminals in a grid array package, and supports synchronous mode. Ideal for industrial applications requiring high memory density and fast access times.
AS4C16M16SA-7TCN by Alliance Memory

AS4C16M16SA-7TCN

Alliance Memory

AS4C16M16SA-7TCN by Alliance Memory is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. Ideal for commercial applications, it offers self-refresh capability and supports common I/O type with a package size of 22.22mm x 10.16mm in a small outline, thin profile style.
S27KS0642GABHI030 by Infineon Technologies

S27KS0642GABHI030

Infineon Technologies

Infineon's S27KS0642GABHI030 is a 8MX8 DRAM with 67108864 bit memory density. Operating at 200 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring fast data access and low power consumption in compact devices.
IS42S16320D-7TLI-TR by Integrated Silicon Solution

IS42S16320D-7TLI-TR

Integrated Silicon Solution

IS42S16320D-7TLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation and self-refresh capability. It operates at 3.3V, has a clock frequency of 143MHz, and is ideal for industrial applications requiring high-speed memory access.
MT41K128M16JT-125AAT:K by Micron Technology

MT41K128M16JT-125AAT:K

Micron Technology

Micron Technology's MT41K128M16JT-125AAT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package, operates at 1.35V, and has an industrial temperature grade. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MTC8C1084S1SC48BA1 by Micron Technology

MTC8C1084S1SC48BA1

Micron Technology

DDR5 DRAM MODULE;
M378B5273CH0-CK0 by Samsung

M378B5273CH0-CK0

Samsung

Samsung's M378B5273CH0-CK0 DDR3 DRAM Module features 512MX64 organization, operates at 800 MHz, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT46V16M16P-5B:MTR by Micron Technology

MT46V16M16P-5B:MTR

Micron Technology

Micron Technology's MT46V16M16P-5B:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for applications requiring fast access times and high memory capacity in commercial temperature environments.
IS42S32800J-7TLI by Integrated Silicon Solution

IS42S32800J-7TLI

Integrated Silicon Solution

IS42S32800J-7TLI by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
KVR16LS11S6/2 by Kingston Technology Company

KVR16LS11S6/2

Kingston Technology Company

Kingston's KVR16LS11S6/2 DDR3L DRAM Module features 256MX64 organization, 1.35V nominal voltage, and operates synchronously. Ideal for applications requiring low power consumption and high memory density in microelectronic assemblies with a max operating temperature of 85°C.
KM416S4020AT-G10 by Samsung

KM416S4020AT-G10

Samsung

Samsung's KM416S4020AT-G10 is a 4MX16 DRAM with 3.3V supply, operating at 100MHz. It features a small outline, thin profile package and offers 67108864 bits memory density. Ideal for applications requiring high-speed data processing in commercial temperature environments.