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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
S70KS1282GABHB030	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V	SELF REFRESH				.0005 Amp	8 mm	35 ns
S27KS0642GABHI020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	25 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V					.00022 Amp	8 mm
W958D8NBYA5I	Winbond Electronics	HYPERRAM		24	TBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	22 mA	33554432 words	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM	1	R-PBGA-B24		2 V	1.2 mm	200 MHz	6 mm		268435456 bit	1.7 V					.0012 Amp	8 mm
S70KS1282GABHB033	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V	SELF REFRESH				.0005 Amp	8 mm	35 ns
S27KL0642DPBHI020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V					.00025 Amp	8 mm
S27KL0642DPBHB020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V					.00036 Amp	8 mm
S70KS1282GABHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	50 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V					.00066 Amp	8 mm
W956D8MBYA5I	Winbond Electronics	HYPERRAM		24	TBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24		2 V	1.2 mm	200 MHz	6 mm		67108864 bit	1.7 V	AUTO/SELF REFRESH				.00025 Amp	8 mm
S27KS0642GABHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	25 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V					.00033 Amp	8 mm
S27KL0642DPBHB023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V					.00036 Amp	8 mm
S27KL0642GABHI020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V					.00025 Amp	8 mm
S27KL0642DPBHA020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V					.00025 Amp	8 mm
S27KL0642DPBHI023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH				.00025 Amp	8 mm	35 ns
S27KL0642DPBHI030	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH				.00025 Amp	8 mm	35 ns
S27KL0642GABHB020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V					.00036 Amp	8 mm
S70KL1282DPBHA020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V					.0005 Amp	8 mm
S27KL0642GABHB023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V					.00036 Amp	8 mm
S27KS0642GABHB020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	25 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V					.00033 Amp	8 mm
S27KS0642GABHI030	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	25 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH				.00025 Amp	8 mm	35 ns
S70KL1282GABHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V					.00075 Amp	8 mm
S70KS1282GABHB020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	50 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V					.00066 Amp	8 mm
S27KS0642GABHI023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	25 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V					.00022 Amp	8 mm
S70KL1282DPBHI020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	56 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH				.0005 Amp	8 mm	35 ns
S27KL0642GABHA023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V					.00025 Amp	8 mm
S70KS1282GABHI020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	50 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V					.00044 Amp	8 mm
S27KS0642GABHV023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	25 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V					.00033 Amp	8 mm
S70KL1282DPBHA023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V					.0005 Amp	8 mm
S70KL1283DPBHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	56 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH				.00075 Amp	8 mm	35 ns
KM424C64Z-10	Samsung	VIDEO DRAM	COMMERCIAL	24	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	100 mA	65536 words			5	5	4	IN-LINE	ZIP24,.1	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T24		5.5 V	10.16 mm		2.96 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.003 Amp		100 ns
KM44C4100AT-6	Samsung	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	100 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	18.41 mm	60 ns
MT4C4M4B1DJ-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	SYNCHRONOUS	130 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	17.17 mm	60 ns
TC51V16405CST-60	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		80 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0			.0005 Amp		60 ns
MT4C4M4B1DJ-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24		5.5 V	3.66 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.44 mm	80 ns
MT4C4M4B1DW-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp	18.44 mm	70 ns
S70KL1282GABHI023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V					.0005 Amp	8 mm
TC5117405CSJ-60	Toshiba	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24		5.5 V	3.7 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.15 mm	60 ns
TMS426409A-70DGA	Texas Instruments	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	SYNCHRONOUS	80 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.14 mm	70 ns
TMS416400A-50DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS		J BEND	ASYNCHRONOUS	100 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	50 ns
TMS416400P-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words	YES		5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH					17.14 mm	80 ns
TMS426400A-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24		3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	60 ns
TMS416400-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	70 ns
TMS417400DGA-80	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS					17.14 mm	80 ns
TMS426100-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words			3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX1	16M	0 Cel		DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					17.14 mm	60 ns
SMJ416100-70FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	80 mA	16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC24/28,.45	DRAMs	1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24		5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	19.685 mm	70 ns
TMS48C138-10DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		DUAL	1	R-PDSO-J24		5.5 V	3.76 mm		7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	17.145 mm	100 ns
TMS416409A-50DGA	Texas Instruments	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	100 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.14 mm	50 ns
TMS46460-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	17.14 mm	60 ns
TMS44460P-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.14 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.