Infineon Technologies - S27KS0642GABHV020

  1. Home
  2. Infineon Technologies - S27KS0642GABHV020
S27KS0642GABHV020 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number S27KS0642GABHV020
Description HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Input/Output Type: COMMON;
Datasheet S27KS0642GABHV020 Datasheet
In Stock111
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .00033 Amp
Organization: 8MX8
Output Characteristics: 3-STATE
Maximum Seated Height: 1 mm
Minimum Supply Voltage (Vsup): 1.7 V
Surface Mount: YES
Maximum Supply Current: 25 mA
No. of Terminals: 24
Maximum Clock Frequency (fCLK): 200 MHz
No. of Words: 8388608 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, VERY THIN PROFILE
Technology: CMOS
JESD-30 Code: R-PBGA-B24
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 105 Cel
Package Code: VBGA
Width: 6 mm
Moisture Sensitivity Level (MSL): 3
Input/Output Type: COMMON
No. of Ports: 1
Memory Density: 67108864 bit
Self Refresh: YES
Memory IC Type: HYPERRAM
Minimum Operating Temperature: -40 Cel
Memory Width: 8
No. of Functions: 1
Package Equivalence Code: BGA24,5X5,40
Length: 8 mm
No. of Words Code: 8M
Nominal Supply Voltage / Vsup (V): 1.8
Terminal Pitch: 1 mm
Maximum Supply Voltage (Vsup): 2 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
111 - -

Popular Products

Category Top Products

MT48LC32M16A2P-75:CTR by Micron Technology

MT48LC32M16A2P-75:CTR

Micron Technology

Micron Technology's MT48LC32M16A2P-75:CTR is a 32MX16 DRAM with 33554432 words and 536870912 bit memory density. Operating at 3.3V, it offers synchronous operation, self-refresh capability, and a max access time of 5.4 ns. Ideal for commercial applications requiring fast and reliable memory performance.
MT53D512M32D2DS-053AIT:D by Micron Technology

MT53D512M32D2DS-053AIT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-053AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a max clock frequency of 1869.1 MHz and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics and industrial devices.
K4B1G1646G-BCMA by Samsung

K4B1G1646G-BCMA

Samsung

Samsung's K4B1G1646G-BCMA DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max standby current of 0.01 Amp.
EDB4432BBBJ-1D-F-D by Micron Technology

EDB4432BBBJ-1D-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F-D is a 128MX32 LPDDR2 DRAM with 134 terminals in a very thin profile grid array package. Operating at 1.2V, it offers synchronous access mode and self-refresh capability for low power consumption. Ideal for applications requiring high memory density and fast data processing in compact devices.
S70KS1282GABHI020 by Infineon Technologies

S70KS1282GABHI020

Infineon Technologies

Infineon's S70KS1282GABHI020 is a 16MX8 DRAM with 200 MHz clock frequency, 1.8V supply voltage, and 85°C operating temp. Ideal for applications requiring high-speed synchronous memory in compact devices due to its very thin profile grid array package style.
IS42S32800J-6TL by Integrated Silicon Solution

IS42S32800J-6TL

Integrated Silicon Solution

IS42S32800J-6TL by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 86 terminals, and supports four bank page burst access mode. Ideal for applications requiring high-speed memory performance in commercial temperature environments.
M392B2G70BM0-YH9 by Samsung

M392B2G70BM0-YH9

Samsung

Samsung M392B2G70BM0-YH9 DRAM features 240 terminals, 1.35V supply, and 667MHz clock frequency. Ideal for servers due to its high memory density of 154618822656 bits and organization of 2GX72, offering fast data processing at temperatures ranging from 0 to 85°C.
MT46H64M32LFBQ-48IT:C by Micron Technology

MT46H64M32LFBQ-48IT:C

Micron Technology

Micron Technology's MT46H64M32LFBQ-48IT:C is a 64MX32 LPDDR1 DRAM with 67108864 words, operating at 208 MHz. It features a very thin profile, fine pitch grid array package and supports synchronous operation with self-refresh capability. Ideal for industrial applications requiring fast memory access and low power consumption.
MT46H128M32L2KQ-6WT:B by Micron Technology

MT46H128M32L2KQ-6WT:B

Micron Technology

Micron Technology's MT46H128M32L2KQ-6WT:B is a DDR1 DRAM with 128MX32 organization, operating at 166 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.
MT53E512M32D1ZW-046AIT:B by Micron Technology

MT53E512M32D1ZW-046AIT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046AIT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features self-refresh mode, common I/O type, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption in automotive electronics and industrial devices.
IS42S83200G-7BLI-TR by Integrated Silicon Solution

IS42S83200G-7BLI-TR

Integrated Silicon Solution

IS42S83200G-7BLI-TR by Integrated Silicon Solution is a 32MX8 Synchronous DRAM with 3.3V supply, 85°C max temp, and 143 MHz clock frequency. Ideal for industrial applications requiring high memory density and fast access times.
MT53E1G16D1FW-046AAT:A by Micron Technology

MT53E1G16D1FW-046AAT:A

Micron Technology

LPDDR4 DRAM;
KVR1333D3S9/4G by Kingston Technology Company

KVR1333D3S9/4G

Kingston Technology Company

DRAMs;
IS43DR16160A-3DBLI by Integrated Silicon Solution

IS43DR16160A-3DBLI

Integrated Silicon Solution

IS43DR16160A-3DBLI by Integrated Silicon Solution is a 16MX16 DDR2 DRAM with 333 MHz clock frequency. It operates at 1.8V, has 84 terminals in a grid array package, and supports synchronous mode. Ideal for industrial applications requiring high memory density and fast access times.
KVR16LS11/4 by Kingston Technology Company

KVR16LS11/4

Kingston Technology Company

Kingston's KVR16LS11/4 DDR DRAM MODULE features 512MX64 organization, 1.35V supply voltage, and 64-bit memory width. Ideal for applications requiring synchronous operation in microelectronic assemblies with a max operating temperature of 85°C.
NT6AN512T32AV-J2 by Nanya Technology

NT6AN512T32AV-J2

Nanya Technology

NT6AN512T32AV-J2 by Nanya Technology is a LPDDR4 DRAM with 512MX32 organization, operating at 1.1V. It features synchronous operation, multi-bank page burst access mode, and a memory width of 32 bits. Ideal for applications requiring high memory density and fast data processing in compact devices.
AS4C1G8MD3L-12BCN by Alliance Memory

AS4C1G8MD3L-12BCN

Alliance Memory

Alliance Memory's AS4C1G8MD3L-12BCN is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. Featuring synchronous operation and self-refresh capability, it offers 1073741824 words of memory with a width of 8 bits. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
IS42S16400J-7BL by Integrated Silicon Solution

IS42S16400J-7BL

Integrated Silicon Solution

IS42S16400J-7BL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. It features self-refresh and common I/O for various applications requiring fast memory access in commercial temperature environments.
IS42S16800F-6TLI by Integrated Silicon Solution

IS42S16800F-6TLI

Integrated Silicon Solution

IS42S16800F-6TLI by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 54 terminals, and supports self-refresh mode. Ideal for industrial applications requiring fast memory access and low standby current consumption.
NT5TU64M16HG-ACH by Nanya Technology

NT5TU64M16HG-ACH

Nanya Technology

NT5TU64M16HG-ACH by Nanya Technology is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and fast access times in a compact grid array package.