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Manufacturer | Micron Technology |
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Manufacturer's Part Number | MT40A1G8WE-075EAIT:B |
Description | DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Self Refresh: YES; |
Datasheet | MT40A1G8WE-075EAIT:B Datasheet |
In Stock | 364 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Standby Current: | .025 Amp |
Organization: | 1GX8 |
Output Characteristics: | 3-STATE |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Maximum Seated Height: | 1.2 mm |
Access Mode: | MULTI BANK PAGE BURST |
Minimum Supply Voltage (Vsup): | 1.14 V |
Surface Mount: | YES |
Maximum Supply Current: | 182 mA |
Terminal Finish: | Tin/Silver/Copper (Sn/Ag/Cu) |
No. of Terminals: | 78 |
Maximum Clock Frequency (fCLK): | 1333 MHz |
No. of Words: | 1073741824 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
Screening Level: | AEC-Q100 |
Technology: | CMOS |
JESD-30 Code: | R-PBGA-B78 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | SYNCHRONOUS |
Maximum Operating Temperature: | 95 Cel |
Package Code: | TFBGA |
Width: | 8 mm |
Input/Output Type: | COMMON |
No. of Ports: | 1 |
Memory Density: | 8589934592 bit |
Self Refresh: | YES |
Sequential Burst Length: | 8 |
Memory IC Type: | DDR4 DRAM |
JESD-609 Code: | e1 |
Minimum Operating Temperature: | -40 Cel |
Memory Width: | 8 |
No. of Functions: | 1 |
Package Equivalence Code: | BGA78,9X13,32 |
Refresh Cycles: | 8192 |
Interleaved Burst Length: | 8 |
Length: | 12 mm |
No. of Words Code: | 1G |
Nominal Supply Voltage / Vsup (V): | 1.2 |
Additional Features: | AUTO/SELF REFRESH |
Peak Reflow Temperature (C): | 260 |
Terminal Pitch: | .8 mm |
Maximum Supply Voltage (Vsup): | 1.26 V |