Samsung - K4B1G1646E-HCF8

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K4B1G1646E-HCF8 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4B1G1646E-HCF8
Description DDR3 DRAM; No. of Terminals: 96; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Standby Current: .01 Amp;
Datasheet K4B1G1646E-HCF8 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .01 Amp
Organization: 64MX16
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 200 mA
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 96
Maximum Clock Frequency (fCLK): 533 MHz
No. of Words: 67108864 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B96
Package Shape: RECTANGULAR
Terminal Form: BALL
Package Code: FBGA
Moisture Sensitivity Level (MSL): 3
Input/Output Type: COMMON
Memory Density: 1073741824 bit
Sequential Burst Length: 4,8
Memory IC Type: DDR3 DRAM
JESD-609 Code: e1
Memory Width: 16
Qualification: Not Qualified
Package Equivalence Code: BGA96,9X16,32
Refresh Cycles: 8192
Interleaved Burst Length: 4,8
Maximum Access Time: .15 ns
No. of Words Code: 64M
Nominal Supply Voltage / Vsup (V): 1.5
Peak Reflow Temperature (C): 260
Terminal Pitch: .8 mm
Power Supplies (V): 1.5
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