24 DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
HYB5117400ASJ-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		120 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0	.001 Amp		50 ns
HYB3116400BJ-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.27 mm	70 ns
HYB5117400ASJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		110 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0	.001 Amp		60 ns
HYB3116405BJ-50	Infineon Technologies	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.27 mm	50 ns
HYB5116100ASJ-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.75 mm		10.28 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE	e0	.001 Amp	18.54 mm	70 ns
HYB3117405BJ-50	Infineon Technologies	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.27 mm	50 ns
HYB5117405BJ-60	Infineon Technologies	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	17.27 mm	60 ns
HYB5117400BT-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		120 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0	.001 Amp		50 ns
HYB5116400AJ-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0	.001 Amp		80 ns
HYB5116405BT-60	Infineon Technologies	EDO DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		90 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0	.001 Amp		60 ns
HYB5117400BJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.27 mm	60 ns
HYB5116400BT-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOP	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		5.5 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.001 Amp	17.27 mm	50 ns
HYB5117405BT-50	Infineon Technologies	EDO DRAM	COMMERCIAL	24	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		120 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24						Not Qualified	16777216 bit			e0	.002 Amp		50 ns
HYB5117400AJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		110 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0	.001 Amp		60 ns
HYB5116400BT-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOP	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		5.5 V	3.75 mm		7.75 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.001 Amp	17.27 mm	70 ns
HYB5116400AJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		90 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0	.001 Amp		60 ns
HYB3117400BT-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	110 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.14 mm	60 ns
HYB3116405BTL-50	Infineon Technologies	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0	.0002 Amp	17.14 mm	50 ns
HYB3116400BT-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	24	LSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	4194304 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, LOW PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		3.6 V	1.27 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.27 mm	70 ns
HYB5117405BJ-70	Infineon Technologies	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		100 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0	.002 Amp		70 ns
S27KL0642GABHI033	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm
S70KL1283DPBHB020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	56 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH		.00075 Amp	8 mm	35 ns
S70KS1282GABHI023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	50 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V			.00044 Amp	8 mm
S27KS0642GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words			1.8		1	GRID ARRAY				125 Cel		64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V		200 MHz			67108864 bit	1.7 V					35 ns
S70KS1282GABHA023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	50 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V			.00044 Amp	8 mm
S27KL0642DPBHV023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V			.00036 Amp	8 mm
S27KL0643DPBHB020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00036 Amp	8 mm	35 ns
S70KL1282DPBHV023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V			.00075 Amp	8 mm
S27KL0642DPBHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V			.00036 Amp	8 mm
S70KS1282GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words			1.8		1	GRID ARRAY				125 Cel		128MX1	128M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V		200 MHz			134217728 bit	1.7 V					35 ns
S27KL0643DPBHA020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S70KL1282DPBHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V			.00075 Amp	8 mm
S70KL1282GABHI020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V			.0005 Amp	8 mm
S27KL0642GABHI023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V			.00025 Amp	8 mm
S27KL0643GABHB023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00036 Amp	8 mm	35 ns
S70KS1283GABHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V	SELF REFRESH		.00075 Amp	8 mm	35 ns
S70KL1282DPBHB023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V			.00075 Amp	8 mm
S27KL0642GABHV020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V			.00036 Amp	8 mm
S27KS0643GABHI020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S70KS1282GABHB023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	50 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V			.00066 Amp	8 mm
S70KL1283GABHB020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH		.00075 Amp	8 mm	35 ns
S70KL1283GABHI023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH		.0005 Amp	8 mm	35 ns
S27KL0642GABHV023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V			.00036 Amp	8 mm
S27KL0642DPBHA023	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V			.00025 Amp	8 mm
S70KL1282GABHB020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V			.00075 Amp	8 mm
S27KS0642GABHB030	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY	HYPER BUS	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	35 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24		2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH		.00033 Amp	8 mm	35 ns
S70KL1282DPBHB030	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	56 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH		.0005 Amp	8 mm	35 ns
S27KS0642GABHV033	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY	HYPER BUS	YES	1	CMOS		BALL	SYNCHRONOUS	35 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24		2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH		.00033 Amp	8 mm	35 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.