240 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT9HTF12872FY-667EXX	Micron Technology	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						128MX72	128M		GOLD	DUAL	1	R-XDMA-N240		1.9 V	5.1 mm		30.35 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT16HTF25664AY-40E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2136 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	256MX64	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			200 MHz		Not Qualified	17179869184 bit			e3			.112 Amp		.6 ns
MT36HTJ25672Y-53EXX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					.5 ns
MT18KDF25672PZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	19327352832 bit	1.283 V	AUTO/SELF REFRESH
MT36KSZF1G72PZ-1G1XX	Micron Technology	DDR3 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		7.25 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e4				133.35 mm
MT16KTF2G64AZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX64	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		137438953472 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					133.35 mm
MT9JBF12872PY-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	18 mm			Not Qualified	9663676416 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT36KSZF51272PDZ-80CF1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH	e4
MT9KSF25672PZ-1G6XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.283 V	AUTO REFRESH	e4				133.35 mm
MT18JSF51272PZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	38654705664 bit	1.425 V	SELF CONTAINED REFRESH	e4				133.35 mm
MT18JSF51272AZ-1G6M1	Micron Technology	DDR3 DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			536870912 words		COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	GOLD	DUAL		R-PDMA-N240				800 MHz		Not Qualified	38654705664 bit			e4
MT18JSF2G72PDZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		154618822656 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT36JDZS51272DIZ-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	18.9 mm			Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT9JSF25672PZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.425 V	AUTO REFRESH	e4				133.35 mm
MT18HTF51272AIZ-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M	-40 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		30 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH					133.35 mm
MT18HVF6472PY-53E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4320 mA	67108864 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N240				267 MHz		Not Qualified	4831838208 bit						.09 Amp		.5 ns
MT9HTF3272PY-667	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	55 Cel	3-STATE	32MX72	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	2415919104 bit			e3			.045 Amp		.45 ns
MT16JTF51264AIY-1G3B1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5120 mA	536870912 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	512MX64	512M	-40 Cel		DUAL		R-PDMA-N240				667 MHz		Not Qualified	34359738368 bit						.16 Amp
MT36KSZF1G72LDZ-1G4M1A5	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm				77309411328 bit	1.283 V	AUTO/SELF REFRESH	e4				133.35 mm
MT18HTF12872DG-40EC2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				55 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		30	235			.6 ns
MT18HVF12872PD-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		30	235
MT4HTF3264AG-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				55 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		30	235			.5 ns
MT36HVS51272PY-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	3.99 mm		17.9 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT36HTF25672PY-53E	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		7200 mA	268435456 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	55 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			267 MHz		Not Qualified	19327352832 bit			e3					.5 ns
MT42L128M32D1MC-18WT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM					14 mm
MT18HTF6472PDY-667	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3240 mA	67108864 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	4831838208 bit						.09 Amp		.45 ns
MT8JTF25664AY-80CB1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3200 mA	268435456 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				400 MHz		Not Qualified	17179869184 bit						.08 Amp		.4 ns
MT16JTF51264AIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX64	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT36KSZF51272PZ-1G4D1	Micron Technology	DDR3 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4
MT9KSF51272AZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		2.7 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					133.35 mm
MT18HTF6472PDY-53ED2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2205 mA	67108864 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			266 MHz		Not Qualified	4831838208 bit			e3			.09 Amp		.5 ns
MT18JSF51272AZ-1G6XX	Micron Technology	DDR3 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH					133.35 mm
MT36HTF51272FZ-80EH1D6	Micron Technology	DDR DRAM MODULE		240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm		3-STATE	512MX72	512M		Gold (Au)	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm	400 MHz	4 mm	Not Qualified	38654705664 bit	1.7 V	WD-MAX	e4				133.35 mm
MT36HVZS51272PY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	3.99 mm		17.9 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
EBJ34LH4E6PA-GN-F	Micron Technology	DDR3L DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	8220 mA	4294967296 words	YES	COMMON	1.35		72	MICROELECTRONIC ASSEMBLY	DIMM240,40		1 mm	95 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.35 mm		8.5 mm		309237645312 bit	1.283 V						133.35 mm
M18HVF12872PTY-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT8JTF12864AZ-1G6G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4800 mA	134217728 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N240				800 MHz		Not Qualified	8589934592 bit						.096 Amp
MT9HTF25672PZ-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT9JDF25672AZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	18.9 mm				154618822656 bit	1.283 V	AUTO/SELF REFRESH	e4				133.35 mm
MT18HTF25672PDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1728 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm	333 MHz	4 mm	Not Qualified	19327352832 bit	1.7 V	SELF CONTAINED REFRESH; WD-MAX	e4			.126 Amp	133.35 mm	.45 ns
MT18HTF25672G-40E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			268435456 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	19327352832 bit								.6 ns
MT36HTF1G72PZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	77309411328 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
EBJ21EE8BAWA-AC-E	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4
MT18JSF1G72PZ-1G9N1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT36JSZF51272PY-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4	30	260
MT36JSZF51272PDY-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT18JDF25672PZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N240		1.575 V	4 mm		18.75 mm		19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT18HTF25672PDY-40E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4320 mA	268435456 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	19327352832 bit						.09 Amp		.6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.