240 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT16HTF6464AY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		30.175 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	.6 ns
MT9JSF25672PZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words				1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.425 V	AUTO REFRESH	e4					133.35 mm
MT9HTF12872FY-667E1D4	Micron Technology	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY						128MX72	128M		Gold (Au)	DUAL	1	R-XDMA-N240		1.9 V	5.1 mm		30.35 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4	30	260			133.35 mm
MT36HTS51272Y-667A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5256 mA	536870912 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm	333 MHz	30.175 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			.18 Amp		133.35 mm	.45 ns
MT36KDYS2G72PZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm		5.87 mm		154618822656 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT18HTF12872PZ-667G1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2520 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	GOLD	DUAL		R-PDMA-N240				333 MHz		Not Qualified	9663676416 bit			e4			.126 Amp			.45 ns
MT36KSZF51272PDZ-1G1XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		7.25 mm	Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX	e4					133.35 mm
MT36JBZS51272PY-80BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		4	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX4	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT72JSZS4G72LZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		4GX72	4G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm				309237645312 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18KSF25672PY-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words				1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.4175 V				Not Qualified	19327352832 bit	1.2825 V	AUTO REFRESH	e4
MT72KSZS1G72PZ-1G1XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	77309411328 bit	1.283 V	AUTO/SELF REFRESH	e4
MT8JTF12864AZ-1G1F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3120 mA	134217728 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N240				533 MHz		Not Qualified	8589934592 bit						.096 Amp
MT16HTF12864AY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT42L256M16D1MC-3AT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX16	256M			BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L256M64D4MC-3AT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX64	256M			BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT18JSF51272PDZ-1G6D1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4023 mA	536870912 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			800 MHz		Not Qualified	38654705664 bit			e3			.216 Amp			.225 ns
MT18JSF51272AIY-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4HTF12864AIZ-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		128MX64	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18HVF25672Y-80EE1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		6030 mA	268435456 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N240				400 MHz		Not Qualified	19327352832 bit						.126 Amp
MT9JSF51272AZ-1G9P1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		2.7 mm		38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT9HTF12872AZ-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30.175 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT36JCZS1G72PIY-1G0XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH	e4
MT72JSZS1G72PIY-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		4	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		2GX4	2G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm	Not Qualified	8589934592 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT18HVF25672PZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	18.05 mm		17.9 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9GTF12872FY-53EXX	Micron Technology	SYNCHRONOUS DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				1.5		72	MICROELECTRONIC ASSEMBLY						128MX72	128M		GOLD	DUAL	1	R-XDMA-N240		1.7 V				Not Qualified	9663676416 bit	1.4 V	CAS BEFORE RAS REFRESH	e4
MT42L128M32D1MC-18AT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT18HTF6472PY-53EXX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT18HTF25672DY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT9HTF12872PY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30 mm	Not Qualified	9663676416 bit	1.7 V	AUTO REFRESH	e4					133.35 mm	.6 ns
MT18JSZF25672PDIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4
MT18JDF1G72PZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18.9 mm		4 mm		77309411328 bit	1.425 V	SELF REFRESH; WD-MAX						133.35 mm
MT16HTF25664AIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		30.175 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9KSF12872PY-80BA1	Micron Technology	DDR3 DRAM MODULE		240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	8		COMMON	1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.4175 V	30.5 mm	400 MHz	4 mm		9663676416 bit	1.2825 V	WD-MAX					8	133.35 mm
MT18HTF12872PDIY-53EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.15 mm				9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4HTF6464AG-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				55 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH		30	235				.5 ns
MT9HTF6472AIY-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30.175 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT36JSZF2G72LZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX72	2G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm				154618822656 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4HTF6464AIY-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	.4 ns
MT36JSF1G72PIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		1GX72	1G	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm				77309411328 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT42L128M32D1MC-25AAT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA240,27X27,20		.5 mm	105 Cel	3-STATE	128MX32	128M	-40 Cel		BOTTOM	1	S-PBGA-B240		1.3 V	.8 mm	400 MHz	14 mm		4294967296 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY				.002 Amp	4,8,16	14 mm
MT9HTF3272AY-40E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2070 mA	33554432 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	2415919104 bit									.6 ns
MT16HTF51264AZ-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT16HTF25672AIY-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9HVF3272Y-40EC2	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2070 mA	33554432 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	32MX72	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			200 MHz		Not Qualified	2415919104 bit			e3			.045 Amp			.6 ns
MT18JSF25672PZ-1G4F1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5670 mA	268435456 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	GOLD	DUAL		R-PDMA-N240				667 MHz		Not Qualified	19327352832 bit			e4			.216 Amp			.255 ns
MT72KSZS2G72PZ-1G6F1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	154618822656 bit	1.283 V	AUTO/SELF REFRESH	e4
MT18HVF51272PZ-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	18.05 mm				38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18HTF12872Y-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		3.6 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.