240 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT18JSF2G72PZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		154618822656 bit	1.425 V	SELF REFRESH; WD-MAX						133.35 mm
M18HVF25672PDY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT42L384M32D3MC-3WT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			384MX32	384M			BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT72JSZS1G72PZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
MT18HVF12872PZ-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	18.05 mm				9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18KSF25672PDZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		262144 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256KX72	256K	0 Cel		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	18874368 bit	1.283 V	AUTO/SELF REFRESH
MT4KTF25664AZ-1G9XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		2.7 mm		19327352832 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT16JTF51264AY-1G1B1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4560 mA	536870912 words		YES	COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm	533 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4			.16 Amp		133.35 mm
MT18HVF12872D-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		30	235
MT18JSF25672PDY-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9JBF12872PIY-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	1073741824 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT72HTS1G72PIY-667XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		30 mm	Not Qualified	77309411328 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9HTF6472AY-667C2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30.175 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	.45 ns
MT18JDF1G72AZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	18.9 mm				77309411328 bit	1.283 V	AUTO/SELF REFRESH	e4					133.35 mm
MT36HTF25672PY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	45 ns
EBJ10UE8BAFA-8A-E	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2000 mA	134217728 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N240				400 MHz		Not Qualified	8589934592 bit						.096 Amp			.4 ns
MT9HVF3272PY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18HVF6472Y-40EXX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT9HTF12872PY-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30 mm	Not Qualified	9663676416 bit	1.7 V	AUTO REFRESH	e4					133.35 mm
MT36GTS1G72FY-667E1D4	Micron Technology	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY						1GX72	1G		GOLD	DUAL	1	R-XDMA-N240		1.625 V	5.1 mm		30.35 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18HTF51272PDZ-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT16HTF51272AIY-40EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18KDF1G72PDZ-1G4E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT36KSF51272PZ-1G4XX	Micron Technology	DDR3 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e4					133.35 mm
MT36HTS51272PY-40EA1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4896 mA	536870912 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			200 MHz		Not Qualified	38654705664 bit			e3			.18 Amp			.6 ns
MT36KSF1G72PZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT18HVF25672Y-40EE1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4680 mA	268435456 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	19327352832 bit						.126 Amp
MT18HTF12872AZ-667G1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1323 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	9663676416 bit			e3						.45 ns
MT36HVS51272PIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9KDF51272AZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm		2.7 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT16JTF51264AZ-1G0XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	34359738368 bit	1.425 V	SELF CONTAINED REFRESH
MT18KDF2G72AZ-1G9XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm		4 mm		154618822656 bit	1.235 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT72KSZS4G72LZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		4GX72	4G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm				309237645312 bit	1.283 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18HTF12872PIY-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.15 mm				9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18JSZF25672PDIY-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4
MT9HTF12872AY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30.175 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	.6 ns
MT36KDZS1G72LDZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	18.9 mm				77309411328 bit	1.283 V	AUTO/SELF REFRESH	e4					133.35 mm
MT36HVZS1G72PIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel		DUAL	1	R-XDMA-N240		1.9 V	18.05 mm		4 mm		38654705664 bit	1.7 V	SELF REFRESH; WD-MAX						133.35 mm
MT9HTF6472AY-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30.175 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	.4 ns
MT18KSF51272AZ-1G6P1	Micron Technology	DDR3L DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1467 mA	536870912 words	8	YES	COMMON	1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		38654705664 bit	1.283 V					.27 Amp	8	133.35 mm
MT9KDF12872PZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	9663676416 bit	1.283 V	AUTO/SELF REFRESH
MT18JSF51272AZ-1G1XX	Micron Technology	DDR3 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
EBJ34LH4B6PP-DJ-F	Micron Technology	DDR3 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	8580 mA	4294967296 words		YES	COMMON	1.5		72	MICROELECTRONIC ASSEMBLY	DIMM240,40		1 mm	95 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.35 mm		8.5 mm		309237645312 bit	1.425 V					.72 Amp		133.35 mm
MT18HTF12872DY-80ED2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2763 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			400 MHz		Not Qualified	9663676416 bit			e3			.126 Amp			.4 ns
MT36JSZS1G72PY-80BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		4	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX4	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm	Not Qualified	8589934592 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
M18HVF25672PIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT36HTF1G72PIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		1GX72	1G	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	77309411328 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18JSF25672PDIY-1G1D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3600 mA	268435456 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	-40 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			533 MHz		Not Qualified	19327352832 bit			e3			.18 Amp

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.