240 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT18HVF51272PZ-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	18.05 mm				38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18HTF12872Y-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		3.6 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT9JDF51272AZ-1G4J1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm		2.7 mm		309237645312 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT4HTF3264AY-80EXX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		32MX64	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e4						.4 ns
MT9JSF25672AZ-1G9K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		2.7 mm		19327352832 bit	1.425 V	SELF REFRESH; WD-MAX						133.35 mm
MT9HVF6472PIY-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18HVF25672Y-53E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5310 mA	268435456 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N240				267 MHz		Not Qualified	19327352832 bit						.09 Amp			.5 ns
MT9HVF3272PY-53EC2	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2160 mA	33554432 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	32MX72	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			267 MHz		Not Qualified	2415919104 bit			e3			.045 Amp			.5 ns
EBJ10EE8BAWA-AG-E	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	9663676416 bit	1.425 V	AUTO/SELF REFRESH	e4
MT9JDF12872PIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	4 mm		18.75 mm	Not Qualified	9663676416 bit	1.425 V	SELF CONTAINED REFRESH	e4					133.35 mm
MT18HTF12872PDY-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.15 mm			Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18HVF12872PD-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		30	235
MT18KSF25672PZ-1G4XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm	667 MHz	4 mm	Not Qualified	19327352832 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					8	133.35 mm
MT36HVZS1G72PZ-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	18.05 mm		4 mm		38654705664 bit	1.7 V	SELF REFRESH; WD-MAX						133.35 mm
MT36JSZF51272PIY-1G1I	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4
MT72JSZS2G72PIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH
MT36JSZF51272PZ-80CXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH						133.5 mm
MT72JSZS1G72PZ-80BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH
MT36KSF1G72PDZ-1G4XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX	e4					133.35 mm
MT16JTF1G64AIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		1GX64	1G	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm				68719476736 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18KSF1G72AZ-1G4XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	e4					133.35 mm
MT18KSF25672AZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		19327352832 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	e4					133.35 mm
MT8JTF25664AZ-1G6D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3480 mA	268435456 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				800 MHz		Not Qualified	17179869184 bit						.096 Amp
MT18HTF25672AY-80EXX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4
MT36JSF2G72PZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		154618822656 bit	1.425 V	SELF REFRESH; WD-MAX						133.35 mm
MT36JSZF51272PDY-1G0XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4
MT9HTF12872Y-667D2	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2700 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	9663676416 bit			e3			.063 Amp			.45 ns
MT42L256M64D4MC-3AAT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA240,27X27,20		.5 mm	105 Cel	3-STATE	256MX64	256M	-40 Cel		BOTTOM	1	S-PBGA-B240		1.3 V	.8 mm	333 MHz	14 mm		17179869184 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	14 mm
MT9HVF12872PIY-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT8JTF25664AY-1G4B1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3680 mA	268435456 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				667 MHz		Not Qualified	17179869184 bit						.08 Amp			.255 ns
M18HVF12872PDY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9HTF12872FY-53EXX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	5.1 mm		30.35 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9HTF3272AY-667	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2250 mA	33554432 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	2415919104 bit					260				.45 ns
MT36JSF2G72PZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		154618822656 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT9HTF12872AZY-80EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH
MT18HTF51272AY-667XX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4
MT36JSF1G72PZ-1G9XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		77309411328 bit	1.425 V	SELF REFRESH; WD-MAX						133.35 mm
MT16JTF51264AIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		3.6 V				Not Qualified	34359738368 bit	3 V	SELF CONTAINED REFRESH	e4
MT9HVF3272PY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18JSF25672PIY-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4
MT42L64M64D2LC-3AT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	240	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		64MX64	64M	-40 Cel		BOTTOM	1	S-PBGA-B240		1.9 V	1 mm		14 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH						14 mm
MT36HTF25672PIY-53EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT36HVZS51272PY-53ED1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5076 mA	536870912 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel		DUAL		R-PDMA-N240				267 MHz		Not Qualified	38654705664 bit						.252 Amp
MT18JSF25672PY-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4	30	260			133.35 mm
MT36JSF51272PZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	e4					133.35 mm
MT18JBZF25672PDY-1G5XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX8	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	2147483648 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT36HTJ51272Y-667XX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT72JSZS1G72PIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.