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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
MTA16ATF1G64HZ-2G3A2	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	512MX72	512M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
CT8G4SFS8266.M8XY	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words			1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	WD-MAX				69.6 mm
MTA8ATF51264HZ-2G1XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	512MX72	512M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA18ASF2G72HZ-3G2XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA8ATF1G64HZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA4ATF25664HZ-2G1XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	256MX64	256M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		2.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA16ATF1G64HZ-2G4XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
CT8G4SFS8213.C8XY	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words			1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	WD-MAX				69.6 mm
MTA8ATF1G64HZ-2G6XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	30	260		69.6 mm
MTA8ATF1G64HZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA4ATF25664HZ-2G6XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	256MX64	256M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		2.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA8ATF51264HZ-1G9XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	512MX64	512M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA4ATF1G64HZ-3G2	Micron Technology	DDR4 DRAM MODULE		260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	NO		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel	1GX64	1G	0 Cel	DUAL	1	R-XDMA-N260			1600 MHz		68719476736 bit			NOT SPECIFIED	NOT SPECIFIED
MTA16ATF1G64HZ-1G9XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA9ASF1G72HBZ-3G2E1	Micron Technology	DDR4 DRAM MODULE		260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1755 mA	1073741824 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY			105 Cel	1GX72	1G	-40 Cel	ZIG-ZAG	1	R-XZMA-N260		30.15 mm	1600 MHz	3.7 mm	77309411328 bit		AUTO/SELF REFRESH; WD-MAX			.234 Amp	69.6 mm
MTA8ATF2G64HZ-3G2B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel	2GX64	2G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA18ASF2G72HZ-2G7XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	2GX72	2G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
CT8G4SFS8213.M8XY	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words			1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	WD-MAX				69.6 mm
MTA18ASF2G72HZ-2G6XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	2GX72	2G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA4ATF51264HZ-3G2XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	512MX64	512M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		2.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA4ATF1G64HZ-2G6	Micron Technology	DDR4 DRAM MODULE		260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	NO		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel	1GX64	1G	0 Cel	DUAL	1	R-XDMA-N260			1333.33 MHz		68719476736 bit
MTA8ATF2G64HZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES			64	MICROELECTRONIC ASSEMBLY			95 Cel	2GX64	2G	0 Cel	DUAL	1	R-XDMA-N260					137438953472 bit		AUTO/SELF REFRESH
MTA16ATF2G64HZ-2G6XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	2GX64	2G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA16ATF1G64HZ-2G1A2	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA18ASF2G72HBZ-3G2XX	Micron Technology	DDR4 DRAM MODULE		260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY			105 Cel	2GX72	2G	-40 Cel	ZIG-ZAG	1	R-XZMA-N260		30.15 mm	1600 MHz	3.7 mm	154618822656 bit		AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA8ATF1G64HZ-3G2J2	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel	1GX64	1G	0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA16ATF2G64HZ-2G3XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	2GX64	2G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA16ATF2G64HZ-2G1XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	2GX64	2G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA9ASF1G72HBZ-3G2XX	Micron Technology	DDR4 DRAM MODULE		260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY			105 Cel	1GX72	1G	-40 Cel	ZIG-ZAG	1	R-XZMA-N260		30.15 mm	1600 MHz	3.7 mm	77309411328 bit		AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA8ATF2G64HZ-3G2XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM260,20	.5 mm	95 Cel	2GX64	2G	0 Cel	DUAL	1	R-XDMA-N260		30.15 mm	1600 MHz	3.7 mm	137438953472 bit		AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA8ATF51264HZ-2G6XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel	512MX72	512M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA18ASF1G72HZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	1GX72	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
CT8G4SFS8266.8XY	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words			1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	WD-MAX				69.6 mm
MTA8ATF51264HZ-2G3XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	512MX72	512M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA18ASF2G72HZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel	2GX72	2G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA4ATF25664HZ-2G3XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	256MX64	256M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		2.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
CT16G4SFD824A.Z16XY	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA16ATF4G64HZ-2G6XX	Micron Technology	DDR4 DRAM MODULE		260	ZMA	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY		.5 mm	95 Cel	4GX64	4G	0 Cel	ZIG-ZAG	1	R-XZMA-N288		30.15 mm	1333 MHz	3.7 mm	274877906944 bit		AUTO REFRESH AND SELF REFRESH; WIDTH MAX				69.6 mm
MTA16ATF2G64HZ-3G2XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel	2GX64	2G	0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA8ATF51264HZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	512MX72	512M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA9ASF1G72HZ-2G6E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel	1GX72	1G	0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA8ATF2G64HZ-2G6XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM260,20	.5 mm	95 Cel	2GX64	2G	0 Cel	DUAL	1	R-XDMA-N260		30.15 mm	1333.33 MHz	3.7 mm	137438953472 bit		AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA18ASF2G72HZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	2GX72	2G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA8ATF2G64HZ-2G6B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words				64	MICROELECTRONIC ASSEMBLY			95 Cel	2GX64	2G	0 Cel	DUAL	1	R-XDMA-N260					137438953472 bit
MTA16ATF1G64HZ-2G6XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	1GX64	1G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA16ATF2G64HZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			85 Cel	2GX64	2G	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm
MTA16ATF1G64HZ-2G3XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel	512MX72	512M	0 Cel	ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm	38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED		69.6 mm
MTA16ATF2G64HZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel	2GX64	2G	0 Cel	DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				69.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.