28 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT42C4256Z-8	Micron Technology	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	130 mA	262144 words			5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.008 Amp	36 mm	80 ns
KM48V2104BK-6	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	100 mA	2097152 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	18.42 mm	60 ns
KM48V514BJ-6	Samsung	EDO DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	524288 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp	18.42 mm	60 ns
TMS427800P-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words	YES		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					18.415 mm	80 ns
TMS416800P-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words	YES		5		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					18.415 mm	80 ns
TMS427800A-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		90 mA	2097152 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL		R-PDSO-G28				Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp		70 ns
TMS427800-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					18.415 mm	80 ns
TMS417809-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.415 mm	70 ns
SMJ44C251B-10SVL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-CZIP-T28	5.5 V	13.08 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					36.83 mm	100 ns
SMJ44C251B-12HMM	Texas Instruments	VIDEO DRAM	MILITARY	28	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	100 mA	262144 words			5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-N28	5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.288 mm	120 ns
TMS427809AP-50DGC	Texas Instruments	EDO DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	120 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp	18.41 mm	50 ns
TMS417800-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.415 mm	80 ns
TMS44800L-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.415 mm	70 ns
SMJ44C251-10HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	110 mA	262144 words			5	5	4	SMALL OUTLINE	SOJ28,.4	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.521 mm	10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.542 mm	100 ns
SMJ44C251B-12JDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-CDIP-T28	5.5 V	3.56 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						120 ns
TMS427809A-50DZ	Texas Instruments	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		120 mA	2097152 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	16777216 bit						.001 Amp		50 ns
TMS44C250-1DZL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-PDSO-J28	5.25 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.415 mm	100 ns
5962-8949704MXX	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	120 mA	262144 words			5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	2	R-XDIP-T28	5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				.015 Amp		100 ns
TMS44800P-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		524288 words	YES		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					18.415 mm	60 ns
5962-8949704MYA	Texas Instruments	VIDEO DRAM	MILITARY	28	QCCJ		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	2	R-XQCC-J28	5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0					100 ns
SMJ417400-70HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		4194304 words			5		4	FLATPACK			1.27 mm	125 Cel		4MX4	4M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					19.685 mm	70 ns
TMS427809A-50DGC	Texas Instruments	EDO DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	120 mA	2097152 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	18.41 mm	50 ns
TMS416809-80DZ	Texas Instruments	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.415 mm	80 ns
SMJ44C251-1JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.25 V	4.445 mm	10.16 mm	Not Qualified	1048576 bit	4.75 V	CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					36.83 mm	100 ns
SMJ416400-80HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	SYNCHRONOUS	70 mA	4194304 words	NO	COMMON	5	5	4	FLATPACK	FL28,.5	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	19.655 mm	80 ns
5962-8949703MMA	Texas Instruments	VIDEO DRAM	MILITARY	28	ZIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	110 mA	262144 words			5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		ZIG-ZAG	2	R-XZIP-T28	5.5 V	13.08 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	36.83 mm	120 ns
TMS44C251-10DJL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-PDSO-J28	5.5 V	3.76 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	18.415 mm	100 ns
TMS416800A-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		70 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL		R-PDSO-G28				Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp		70 ns
SMJ44C251B-10HMMT	Texas Instruments	VIDEO DRAM	MILITARY	28	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS		NO LEAD	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	2	R-CDSO-N28	5.5 V	2.54 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.285 mm	100 ns
SMJ44C251-15HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28		4.52 mm	10.541 mm	Not Qualified	1048576 bit		CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.545 mm	150 ns
TMS427809AP-70DGC	Texas Instruments	EDO DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	90 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp	18.41 mm	70 ns
TMS44800L-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.415 mm	60 ns
TMS44C251-12DZL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.415 mm	120 ns
TMS417809A-50DZ	Texas Instruments	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	130 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	18.415 mm	50 ns
SMJ417100-80HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		16777216 words			5		1	FLATPACK			1.27 mm	125 Cel		16MX1	16M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					19.685 mm	80 ns
TMS44800L-60DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	120 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.41 mm	60 ns
SMJ44C251-15JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28		3.56 mm	10.16 mm	Not Qualified	1048576 bit		CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						150 ns
TMS427800P-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words	YES		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					18.415 mm	70 ns
TMS416800-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.415 mm	60 ns
SMJ44C250-2HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	100 mA	262144 words			5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.25 V	4.521 mm	10.541 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.542 mm	120 ns
TMS417800P-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words	YES		5		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					18.415 mm	60 ns
5962-8949703MYA	Texas Instruments	VIDEO DRAM	MILITARY	28	QCCJ		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	2	R-XQCC-J28	5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0					120 ns
TMS44800S-60DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	120 mA	524288 words	YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.41 mm	60 ns
TMS44C251-12DJL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		DUAL	2	R-PDSO-J28	5.5 V	3.76 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	18.415 mm	120 ns
TMS416800P-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words	YES		5		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					18.415 mm	70 ns
5962-8949703MMX	Texas Instruments	VIDEO DRAM	MILITARY	28	ZIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		ZIG-ZAG	2	R-XZIP-T28	5.5 V	13.08 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH					36.83 mm	120 ns
5962-9231203MXX	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS	80 mA	4194304 words	NO	COMMON	5	5	4	FLATPACK	FL28,.5	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F28	5.5 V	3.32 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0			.001 Amp	19.685 mm	70 ns
SMJ44C250-12HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	100 mA	262144 words			5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDSO-J28	5.5 V	4.521 mm	10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	18.542 mm	120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.