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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
HYB3117800BSJL-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	16777216 bit			e0	.0002 Amp		50 ns
HYB3117800BSJ-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.75 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.002 Amp	18.54 mm	50 ns
HYB5117805BSJ-60	Infineon Technologies	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	2097152 words	YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.75 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.54 mm	60 ns
HYB3117805BSJ-50	Infineon Technologies	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.75 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.54 mm	50 ns
HYB3117805BSJ-60	Infineon Technologies	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.75 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.54 mm	60 ns
HYB514800BJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	4194304 bit			e0	.001 Amp		60 ns
DM2202J1-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212J1-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2202J-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202J-20	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		20 ns
DM2202J-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202J1-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2212J-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202J1-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2212J-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212J1-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2212J-20	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		20 ns
DM2202J-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212J-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202J1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202J1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212J1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2212J-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2202J-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212J-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2200J-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202J-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2212J1-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2212J1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2202J-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212J-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2202J1-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2200J-20	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		20 ns
DM2212J1-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
SDA9251-2X	Infineon Technologies	VIDEO DRAM	COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS	100 mA	217088 words			5	5	4	SMALL OUTLINE	SOP28,.45	Other Memory ICs	1.27 mm	70 Cel		212KX4	212K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G28	5.5 V	2.54 mm	8.9 mm	Not Qualified	868352 bit	4.5 V	16 X 4 SAM PORT	e0	.005 Amp	18.3 mm	25 ns
TC514900AJLL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words	YES		5		9	SMALL OUTLINE			1.27 mm	70 Cel		512KX9	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0		18.42 mm	70 ns
TC514800AJ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		75 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	4194304 bit			e0	.001 Amp		100 ns
TC51V17800CFTS-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			18.41 mm	60 ns
TC5116400BJ-60	Toshiba	OTHER DRAM		28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND			4194304 words			5		4	SMALL OUTLINE						4MX4	4M			DUAL	1	R-PDSO-J28	5.5 V			Not Qualified	16777216 bit	4.5 V					60 ns
TC524258BJ-10	Toshiba	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J28	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4	e0		18.42 mm	100 ns
TC514800AZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	524288 words	NO	COMMON	5	5	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28				Not Qualified	4194304 bit			e0	.0003 Amp		100 ns
TC5117800CST-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			18.41 mm	60 ns
TC5117800CST-50	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			18.41 mm	50 ns
TC514900AJL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		75 mA	524288 words	NO	COMMON	5	5	9	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	4718592 bit			e0	.0003 Amp		100 ns
TC5117800ANT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		18.41 mm	70 ns
TC524258BZ-80	Toshiba	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4	e0		36.2 mm	80 ns
TC514800AZLL-70	Toshiba	FAST PAGE DRAM		28	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE			524288 words			5		8	IN-LINE			1.27 mm			512KX8	512K			ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V				36.2 mm	70 ns
TC524259BJ-80	Toshiba	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J28	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT	e0		18.42 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.