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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
M378A1G43DB0-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1340 mA	1073741824 words		YES	COMMON	1.2	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	DRAMs		85 Cel	3-STATE	1GX64	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1200 MHz	3.9 mm	Not Qualified	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.12 Amp		133.35 mm	.175 ns
M378A2K43BB1-CTD	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.85 mm			2GX64	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M391A5143EB1-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			512MX72	512M		DUAL	1	R-XDMA-N288	1.26 V	31.25 mm		2.9 mm		38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393A1K43BB0-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						1GX72	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.1 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M391A2K43BB1-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			2GX72	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393AAG40M32-CYF	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		17179869184 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			16GX72	16G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.3 mm		1236950581248 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M378A1K43BB1-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.85 mm			1GX64	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		2.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393A8K40B22-CWD	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			8GX72	8G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		9.6 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH					133.35 mm
M378A5644EB0-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY						256MX64	256M		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		2.8 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393A8K40B21-CTC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						8GX72	8G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.1 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M378A5244BB0-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.85 mm			512MX64	512M		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		2.61 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393A4K40BB2-CTD	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4786 mA	4294967296 words		YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm			4GX72	4G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.3 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.723 Amp		133.35 mm
M393A8G40MB2-CVF	Samsung	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm	95 Cel		8GX72	8G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.25 mm		4.3 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX; SEATED HGT-NOM	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
M378A1K43CB2-CPB	Samsung	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	1073741824 words	4,8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm			1GX64	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1067 MHz	2.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.136 Amp	4,8	133.35 mm
M393A1K43BB1-CTD	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						1GX72	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.3 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393A2K40BB0-CPB	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33	Other Memory ICs	.85 mm	85 Cel	3-STATE	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1066 MHz	3.9 mm	Not Qualified	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm	.18 ns
M378A5244CB0-CPB	Samsung	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	816 mA	536870912 words	4,8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm			512MX64	512M		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1067 MHz	2.61 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.068 Amp	4,8	133.35 mm
M378A5244BB0-CTD	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.85 mm			512MX64	512M		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		2.61 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M378A2K43CB1-CTD	Samsung	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1624 mA	2147483648 words	4,8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm			2GX64	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1333 MHz	3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.336 Amp	4,8	133.35 mm
M393A2G40EB1-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						2GX72	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.1 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M392A2K43BB0-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						2GX72	2G		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		4.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M386A4G40DM0-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						4GX72	4G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M392A2K43BB0-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						2GX72	2G		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		4.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M378A2K43CB1-CRC	Samsung	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1624 mA	2147483648 words	4,8	YES	COMMON	1.2		64	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm			2GX64	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1200 MHz	3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.288 Amp	4,8	133.35 mm
M393A2K43CB1-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			2GX72	2G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.3 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M378A1G43DB0-CPRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY						1GX64	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393A8K40B21-CRB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						8GX72	8G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.1 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M392A4K40BM0-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						4GX72	4G		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		4.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M391A1G43EB1-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						1GX72	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393A1K43BB0-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						1GX72	1G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.1 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
M378A1G43DB0-CPB	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1310 mA	1073741824 words		YES	COMMON	1.2	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	DRAMs		85 Cel	3-STATE	1GX64	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1066 MHz	3.9 mm	Not Qualified	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.12 Amp		133.35 mm	.18 ns
M392A4K40BM0-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY						4GX72	4G		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		4.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M386AAK40B40-CWD	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		17179869184 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			16GX72	16G		DUAL	1	R-XDMA-N288	1.26 V	31.25 mm		4.1 mm		1236950581248 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M386A8K40BM1-CPB	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			8GX72	8G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
M393A1G43DB1-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3290 mA	1073741824 words		YES	COMMON	1.2	1.2,2.5	72	MICROELECTRONIC ASSEMBLY	DIMM288,33	Other Memory ICs	.85 mm	85 Cel	3-STATE	1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1200 MHz	3.9 mm	Not Qualified	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED	.17 Amp		133.35 mm	.175 ns
M393AAK40B41-CRB	Samsung	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS				YES		1.2		72	MICROELECTRONIC ASSEMBLY						16GX72	16G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.1 mm			1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
M393A2G40DB1-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	1.2,2.5	72	MICROELECTRONIC ASSEMBLY	DIMM288,33	Other Memory ICs	.85 mm	85 Cel	3-STATE	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1200 MHz	3.9 mm	Not Qualified	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
M378A5143DB0-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	536870912 words		YES	COMMON	1.2	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,33	DRAMs		85 Cel	3-STATE	512MX64	512M	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1200 MHz	2.7 mm	Not Qualified	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX			.06 Amp		133.35 mm	.175 ns
M393A2K43BB1-CTD	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			2GX72	2G		DUAL	1	R-XDMA-N288	1.26 V	31.25 mm		4.3 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX	NOT SPECIFIED	NOT SPECIFIED			133.35 mm
M386A8K40BM2-CTD	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8589934592 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm			8GX72	8G		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		4.3 mm		618475290624 bit	1.14 V	AUTO/SELF REFRESH					133.35 mm
M378A5244BB0-CRC	Samsung	DDR DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.85 mm			512MX64	512M		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		2.61 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA36ASF2G72LZ-2G1XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm	85 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF2G72PDZ-3G2XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF1G72AZ-1G9XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF2G72PZ-3G2XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA9ASF1G72PZ-3G2J3	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel		1GX72	1G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA36ASF4G72PZ-3G2XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		4GX72	4G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MTA18ASF2G72PDZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel	DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.