30 DRAM 854

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
TM124GU8A-6	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	190 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		SINGLE	1	R-XSMA-N30	5.25 V	16.637 mm	Not Qualified	8388608 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp	60 ns
TM4100EAD9-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	4194304 words	YES	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M		SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm	Not Qualified	37748736 bit	4.5 V	AUTO/SELF REFRESH				.009 Amp	80 ns
TM4256FL8-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	1	R-XSMA-T30	5.5 V	16.51 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		200 ns
TM497GU8-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	200 mA	4194304 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX8	4M		SINGLE	1	R-XSMA-N30	5.5 V	16.637 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp	70 ns
TM497GU8-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	220 mA	4194304 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX8	4M		SINGLE	1	R-XSMA-N30	5.5 V	16.637 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp	60 ns
TM024GAD8-6	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		8	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	1MX8	1M		SINGLE	1	R-XSMA-N30	5.25 V		Not Qualified	8388608 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					60 ns
TM4100EBD9-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	675 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M		SINGLE	1	R-XSMA-N30	5.5 V	23.114 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp	80 ns
TM4100GAD8-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	4194304 words	YES	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX8	4M		SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm	Not Qualified	33554432 bit	4.5 V	AUTO/SELF REFRESH				.008 Amp	70 ns
HYM22100S-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	170 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		SINGLE	1	R-XSMA-N30	5.5 V	15.24 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp	80 ns
HYM84500S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	4194304 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX8	4M		SINGLE	1	R-XSMA-N30	5.5 V	20.32 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp	70 ns
HYM91000L-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	810 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.009 Amp	60 ns
HYM94500L-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	990 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX9	4M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.32 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT	e0			.009 Amp	60 ns
HYM84500L-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	800 mA	4194304 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX8	4M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	22.606 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.008 Amp	70 ns
HYM91000S-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	630 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.009 Amp	80 ns
HYM22100S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	200 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		SINGLE	1	R-XSMA-N30	5.5 V	15.24 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp	70 ns
HYM22100S-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	220 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		SINGLE	1	R-XSMA-N30	5.5 V	15.24 mm	Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp	60 ns
HYM32200S-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	250 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE	1	R-XSMA-N30	5.5 V	15.24 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.003 Amp	80 ns
HYM32200S-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	310 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE	1	R-XSMA-N30	5.5 V	15.24 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.003 Amp	60 ns
HYM32200L-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	280 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	17.5006 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT	e0			.003 Amp	70 ns
HYM94500L-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	900 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX9	4M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.32 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT	e0			.009 Amp	70 ns
HYM32200L-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	250 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	17.5006 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT	e0			.003 Amp	80 ns
HYM91000LL-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	720 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0018 Amp	70 ns
HYM84500S-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	4194304 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX8	4M		SINGLE	1	R-XSMA-N30	5.5 V	20.32 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp	60 ns
HYM91000SL-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				.0018 Amp	60 ns
HYM94000S-10	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M		SINGLE	1	R-XSMA-N30	5.5 V	24.257 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp	100 ns
HYM84500L-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	880 mA	4194304 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX8	4M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	22.606 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.008 Amp	60 ns
HYM94500S-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M		SINGLE	1	R-XSMA-N30	5.5 V	20.32 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.009 Amp	80 ns
HYM32200S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	280 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE	1	R-XSMA-N30	5.5 V	15.24 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.003 Amp	70 ns
HYM91000S-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.009 Amp	60 ns
HYM84500S-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	680 mA	4194304 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX8	4M		SINGLE	1	R-XSMA-N30	5.5 V	20.32 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp	80 ns
HYM94500L-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	810 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX9	4M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.32 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT	e0			.009 Amp	80 ns
HYM91000S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.009 Amp	70 ns
HYM84500L-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	680 mA	4194304 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX8	4M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	22.606 mm	Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.008 Amp	80 ns
HYM91000L-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	720 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.009 Amp	70 ns
HYM91000L-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	630 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.009 Amp	80 ns
HYM32200L-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	310 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	17.5006 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT	e0			.003 Amp	60 ns
HYM94500S-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	990 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M		SINGLE	1	R-XSMA-N30	5.5 V	20.32 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.009 Amp	60 ns
HYM91000SL-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				.0018 Amp	70 ns
HYM91000LL-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	810 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	TIN LEAD	SINGLE	1	R-XSMA-T30	5.5 V	20.447 mm	Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0018 Amp	60 ns
HYM94000S-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	910 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M		SINGLE	1	R-XSMA-N30	5.5 V	24.257 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp	80 ns
HYM94500S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M		SINGLE	1	R-XSMA-N30	5.5 V	20.32 mm	Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT				.009 Amp	70 ns
HYM39500S-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	190 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	1	R-XSMA-N30	5.5 V	15.24 mm	Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0045 Amp	80 ns
THM91000S-85	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		630 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M		SINGLE		R-PSMA-N30		20.32 mm	Not Qualified	9437184 bit						.009 Amp	85 ns
THM91001L-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			540 mA	1048576 words		COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE				22.86 mm	Not Qualified	9437184 bit			e0			.009 Amp	100 ns
THM81001S-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		400 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M		SINGLE		R-PSMA-N30		20.32 mm	Not Qualified	8388608 bit						.008 Amp	120 ns
THM91001L-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			450 mA	1048576 words		COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE				22.86 mm	Not Qualified	9437184 bit			e0			.009 Amp	120 ns
THM91070AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	30			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1		NO LEAD	ASYNCHRONOUS		1048576 words			5		9	MICROELECTRONIC ASSEMBLY				70 Cel		1MX9	1M		SINGLE	1	R-XSMA-N30	5.5 V		Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					80 ns
THM91021L-10	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			540 mA	1048576 words		COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE				12.7 mm	Not Qualified	9437184 bit			e0			.009 Amp	100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.