50 DRAM 1,078

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
IS42S16100H-7TLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M	-40 Cel	Tin (Sn)	DUAL	1	R-PDSO-G50	3	3.6 V	1.2 mm		10.16 mm		16777216 bit	3 V	AUTO/SELF REFRESH	e3	10	260			20.95 mm	5.5 ns
W9816G6JH-6I	Winbond Electronics	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M	-40 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm		16777216 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20.95 mm	5 ns
IS42S16100C1-7TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	140 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e3	10	260	.002 Amp	1,2,4,8	20.95 mm	5.5 ns
IS42S16100H-7TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	70 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH				.0035 Amp	1,2,4,8	20.95 mm	5.5 ns
MT4LC4M16R6TG-5	Micron Technology	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	SYNCHRONOUS	150 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	30	235	.0005 Amp		20.95 mm	50 ns
SMJ626162-15DGEM	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50		3.465 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH						20.95 mm
5962-9674302QXX	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					21 mm	70 ns
TMS464169P-40DGE	Texas Instruments	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	140 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		20.95 mm	40 ns
SMJ418160-70HKDM	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	MOS	38535Q/M;38534H;883B	FLAT	ASYNCHRONOUS	180 mA	1048576 words		NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		21 mm	70 ns
SMJ626162-12HKDM	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS		FLAT	SYNCHRONOUS		1048576 words				3.3		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		3.465 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH						21 mm	8 ns
SMJ626162HKD	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS		FLAT	SYNCHRONOUS		1048576 words				3.3		16	FLATPACK				125 Cel		1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		3.465 V				Not Qualified	16777216 bit	3.135 V	AUTO REFRESH							8 ns
5962-9754503NYB	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-STD-883	GULL WING	SYNCHRONOUS	180 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50		3.465 V	1.2 mm	83 MHz	10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	12 ns
SMJ416160-70HKD	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						21 mm	70 ns
5962-9674304QXX	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					21 mm	70 ns
5962-9674302QXA	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	ASYNCHRONOUS	80 mA	1048576 words		NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-XDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		21 mm	70 ns
TMS626162-12ADGER	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20.95 mm	9 ns
TMS465169P-50DGE	Texas Instruments	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	130 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		20.95 mm	50 ns
TMS465169-60DGE	Texas Instruments	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	110 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	60 ns
TMS465169-40DGE	Texas Instruments	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	160 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	40 ns
5962-9674303QXA	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	ASYNCHRONOUS	170 mA	1048576 words		NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-XDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		21 mm	80 ns
5962-9754502QXA	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	SYNCHRONOUS	150 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		3.465 V	3.55 mm	50 MHz	16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	21 mm	20 ns
5962-9674301QXA	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-XDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		21 mm	80 ns
5962-9674304QXA	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	ASYNCHRONOUS	180 mA	1048576 words		NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-XDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		21 mm	70 ns
TMS626162-12A	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G50		3.63 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH						20.95 mm
SMJ626162-20DGEM	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50		3.465 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH						20.95 mm
SMJ626162-20DGE	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-PRF-38535 Class N	GULL WING	SYNCHRONOUS	150 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50		3.465 V	1.2 mm	50 MHz	10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	10 ns
TMS626162-12DGER	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20.95 mm	9 ns
SMJ418160-80HKDM	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	MOS	38535Q/M;38534H;883B	FLAT	ASYNCHRONOUS	170 mA	1048576 words		NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		21 mm	80 ns
5962-9754502QXX	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	SYNCHRONOUS		1048576 words				3.3		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-CDFP-F50		3.465 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH	e0					21 mm	20 ns
5962-9754502NYB	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-STD-883	GULL WING	SYNCHRONOUS	150 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50		3.465 V	1.2 mm	50 MHz	10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	20 ns
TMS626162-15DGER	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20.95 mm
SMJ626162-15DGE	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-PRF-38535 Class N	GULL WING	SYNCHRONOUS	175 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50		3.465 V	1.2 mm	66 MHz	10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	9 ns
5962-9754503QXA	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	SYNCHRONOUS	180 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		3.465 V	3.55 mm	83 MHz	16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	21 mm	12 ns
SMJ626162-15HKDM	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS		FLAT	SYNCHRONOUS		1048576 words				3.3		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		3.465 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH						21 mm	9 ns
5962-9754502NYX	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-STD-883	GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.465 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH	e0					20.95 mm	20 ns
5962-9674301QXX	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					21 mm	80 ns
SMJ418160-60HKDM	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						21 mm	60 ns
TMS465169P-40DGE	Texas Instruments	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	160 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		20.95 mm	40 ns
SMJ418160-80HKD	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						21 mm	80 ns
TMS464169P-60DGE	Texas Instruments	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	100 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		20.95 mm	60 ns
5962-9754501NYB	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-STD-883	GULL WING	SYNCHRONOUS	175 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50		3.465 V	1.2 mm	66 MHz	10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	15 ns
TMS626162-12	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						20.95 mm
TMS626162A-10DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS	140 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	7 ns
TMS464169-40DGE	Texas Instruments	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	140 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	40 ns
SMJ626162DGE	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50		3.465 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH						20.95 mm	10 ns
5962-9754501NYX	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	MIL-STD-883	GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-PDSO-G50		3.465 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH	e0					20.95 mm	15 ns
SMJ626162-12HKD	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	SYNCHRONOUS	180 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		3.465 V	3.55 mm	83 MHz	16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	21 mm	8 ns
SMJ418160-70HKD	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50		5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						21 mm	70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.