50 DRAM 1,078

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT4LC4M16U6TG-52TR	Micron Technology	EDO DRAM		50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm		3-STATE	4MX16	4M		TIN LEAD	DUAL	1	R-PDSO-G50	3.47 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH	e0					20.95 mm	52 ns
MT4LC4M16F5TG-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					20.95 mm	70 ns
MT4LC4M16N3TG-5TR	Micron Technology	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					20.95 mm	50 ns
MT4LC4M16F5TG-5	Micron Technology	FAST PAGE DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	175 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	30	235	.0005 Amp		20.95 mm	50 ns
MT4LC4M16N3TG-5	Micron Technology	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	SYNCHRONOUS	155 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	50 ns
MT4LC4M16R6TG-5S	Micron Technology	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.00035 Amp		20.95 mm	50 ns
MT4LC4M16R6TG-6S	Micron Technology	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	SYNCHRONOUS	165 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.00035 Amp		20.95 mm	60 ns
MT4LC4M16K2TG-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					20.95 mm	60 ns
MT4LC4M16N3TG-7	Micron Technology	EDO DRAM	COMMERCIAL	50	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	125 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.95 mm	70 ns
MT48LC1M16A1TG-7SIT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	16777216 bit	3 V		e0			.002 Amp	1,2,4,8	20.95 mm	5.5 ns
MT48LC1M16A1TG-12S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	115 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	8	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	83 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20.95 mm	9 ns
MT48LC1M16A1-8AS	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE					70 Cel		1MX16	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G50	3.6 V				Not Qualified	16777216 bit	3 V		e3						6 ns
MT48LC1M16A1TG-7S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20.95 mm	5.5 ns
MT48LC1M16A1TG-10S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	130 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20.95 mm	7.5 ns
MT48LC1M16A1TG-8ASIT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	135 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	16777216 bit	3 V		e0			.002 Amp	1,2,4,8	20.95 mm	6 ns
MT48LC1M16A1TG-6S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	145 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	16777216 bit	3 V		e0			.002 Amp	1,2,4,8	20.95 mm	5.5 ns
MT48LC1M16A1TG-8AS	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	135 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	20.95 mm	6 ns
MT48LC1M16A1-7S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE					70 Cel		1MX16	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G50	3.6 V				Not Qualified	16777216 bit	3 V		e3						5.5 ns
MT48LC1M16A1TG-6STR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e0					20.95 mm	5.5 ns
MT48LC1M16A1TG-6SIT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	145 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	16777216 bit	3 V		e0			.002 Amp	1,2,4,8	20.95 mm	5.5 ns
MT48LC1M16A1TG-8BS	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		135 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50			125 MHz		Not Qualified	16777216 bit			e0			.002 Amp	1,2,4,8		6 ns
MT48LC1M16A1-6S	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	50	SOP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE					70 Cel		1MX16	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G50	3.6 V				Not Qualified	16777216 bit	3 V		e3						5.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.