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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4T51043QC-ZLE7T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M		BOTTOM		R-PBGA-B63	3			400 MHz		Not Qualified	536870912 bit					260		4,8		.4 ns
K4T51043QC-ZCF7T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M		BOTTOM		R-PBGA-B63	3			400 MHz		Not Qualified	536870912 bit					260	.008 Amp	4,8		.4 ns
K4T51043QC-ZCD5T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	TIN SILVER COPPER	BOTTOM		R-PBGA-B63	3			267 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.5 ns
K4T51043QC-ZLE6T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M		BOTTOM		R-PBGA-B63	3			333 MHz		Not Qualified	536870912 bit					260	.005 Amp	4,8		.45 ns
K4T51043QC-ZLF7T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M		BOTTOM		R-PBGA-B63	3			400 MHz		Not Qualified	536870912 bit					260		4,8		.4 ns
K4T51043QC-ZLCCT	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M		BOTTOM		R-PBGA-B63	3			200 MHz		Not Qualified	536870912 bit					260	.0045 Amp	4,8		.6 ns
K4T51043QC-ZLD5T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M		BOTTOM		R-PBGA-B63	3			267 MHz		Not Qualified	536870912 bit					260	.0045 Amp	4,8		.5 ns
K4T51043QC-ZCE7T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M		BOTTOM		R-PBGA-B63	3			400 MHz		Not Qualified	536870912 bit					260	.008 Amp	4,8		.4 ns
K4T51043QC-ZCE6T	Samsung	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX4	128M	TIN SILVER COPPER	BOTTOM		R-PBGA-B63	3			333 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.45 ns
MT47H256M8THN-25E:M	Micron Technology	DDR2 DRAM		63	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	230 mA	268435456 words		YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,9X11,32		.8 mm	85 Cel		256MX8	256M		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm	400 MHz	8 mm		2147483648 bit	1.7 V	SELF REFRESH				.02 Amp		10 mm
MT47H512M4THN-25:M	Micron Technology	DDR2 DRAM		63	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	230 mA	536870912 words		YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,9X11,32		.8 mm	85 Cel		512MX4	512M		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm	400 MHz	8 mm		2147483648 bit	1.7 V	SELF REFRESH				.02 Amp		10 mm
MT47H512M4THN-25:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	347 mA	268435456 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H512M4-25:G	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY				85 Cel		256MX4	256M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H256M8-25:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H512M4-25E:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY				85 Cel		256MX4	256M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H256M8THN-25:G	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	347 mA	134217728 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H256M8THN-3:HTR	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		8 mm		2147483648 bit	1.7 V	SELF REFRESH	e1					10 mm
MT47H256M8THN-25E:G	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			11.5 mm
MT47H512M4-3:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY				85 Cel		256MX4	256M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H256M8THN-3:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	292 mA	134217728 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H512M4THN-3:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	292 mA	268435456 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63	1	1.9 V	1.35 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H256M8-25E:G	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H512M4THN-3:H	Micron Technology	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		192 mA	536870912 words			COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M		BOTTOM		R-PBGA-B63				333 MHz		Not Qualified	2147483648 bit				30	260	.014 Amp
MT47H256M8-3:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H512M4THN-25E:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	347 mA	268435456 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H512M4-37E:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY				85 Cel		256MX4	256M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H512M8WTR-3:C	Micron Technology	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			536870912 words			COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	MATTE TIN	BOTTOM		R-PBGA-B63	1					Not Qualified	4294967296 bit			e3
MT47H512M8THM-37E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	SELF CONTAINED REFRESH	e1					14 mm
MT47H1G4THM-25	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.8		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	SELF CONTAINED REFRESH	e1					14 mm
MT47H512M4THN-25:G	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						11.5 mm
MT47H256M8-25E:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H512M8THM-25	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	SELF CONTAINED REFRESH	e1					14 mm
MT47H256M8-37E:E	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H512M4-25E:G	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY				85 Cel		256MX4	256M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H512M4THN-37E:G	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	282 mA	268435456 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm	267 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H512M8THM-3:A	Micron Technology	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		353 mA	536870912 words			COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M		BOTTOM		R-PBGA-B63						Not Qualified	4294967296 bit						.016 Amp
MT47H256M8-25:G	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY				85 Cel		128MX8	128M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H512M4THN-25E:G	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						11.5 mm
MT47H1G4WTR-3:C	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm		4294967296 bit	1.7 V	SELF REFRESH	e1	30	260			11.5 mm
MT47H512M4THN-25E:M	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		8 mm		2147483648 bit	1.7 V	SELF REFRESH						10 mm
MT47H256M8THN-37E:M	Micron Technology	DDR2 DRAM		63	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,9X11,32		.8 mm	85 Cel		256MX8	256M		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm	266.6 MHz	8 mm		2147483648 bit	1.7 V	SELF REFRESH						10 mm
MT47H256M8THN-25:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	347 mA	134217728 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H256M8THN-37E	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH						11.5 mm
MT47H1G4THM-3	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.8		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	SELF CONTAINED REFRESH	e1					14 mm
MT47H512M4-37E:G	Micron Technology	DDR2 DRAM	OTHER	63	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY				85 Cel		256MX4	256M		BOTTOM	1	R-PBGA-B63		1.9 V				Not Qualified	1073741824 bit	1.7 V	SELF CONTAINED REFRESH
MT47H512M4THN-37E:M	Micron Technology	DDR2 DRAM		63	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,9X11,32		.8 mm	85 Cel		512MX4	512M		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm	266.6 MHz	8 mm		2147483648 bit	1.7 V	SELF REFRESH						10 mm
MT47H256M8THN-25E:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	347 mA	134217728 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H512M8THM-37E:A	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	308 mA	536870912 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	SELF CONTAINED REFRESH	e1	30	260	.016 Amp		14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.