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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Maximum Access Time
DM2M36SJ6-15L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	2097152 words	YES	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE		R-PSMA-N72		24.257 mm	Not Qualified	75497472 bit			.018 Amp	15 ns
DM2M36SJ7-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	2097152 words	NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE		R-PSMA-N72		24.257 mm	Not Qualified	75497472 bit			.018 Amp	12 ns
DM2M32SJ7-15L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE		R-PSMA-N72		24.257 mm	Not Qualified	67108864 bit			.016 Amp	15 ns
DM512K32ST-15	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE		R-PSMA-N72		24.257 mm	Not Qualified	16777216 bit			.004 Amp	15 ns
DM2M36SJ7-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	2097152 words	NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	85 Cel	3-STATE	2MX36	2M	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm	Not Qualified	75497472 bit			.018 Amp	12 ns
DM1M32SJ7-15L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE		R-PSMA-N72		24.257 mm	Not Qualified	33554432 bit			.008 Amp	15 ns
THM322500BS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		16	MICROELECTRONIC ASSEMBLY					70 Cel		512KX16	512K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
THM322020ASG-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		80 ns
THL32V4010BTG-7	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			4194304 words			3.3		32	SMALL OUTLINE							4MX32	4M		DUAL	1	R-PDSO-G72			Not Qualified	134217728 bit				70 ns
THM362020AS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		60 ns
THL32V1010ATG-8L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words			3.3		32	SMALL OUTLINE							1MX32	1M		DUAL	1	R-PDSO-G72			Not Qualified	33554432 bit				80 ns
THM3610B0ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		330 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE		R-PSMA-N72		17.78 mm	Not Qualified	37748736 bit			.002 Amp	70 ns
THM362040AS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		60 ns
THM402500ASG-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words			5		40	MICROELECTRONIC ASSEMBLY					70 Cel		256KX40	256K	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	10485760 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		100 ns
THM322020ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		70 ns
THM321000AS-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		600 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE		R-PSMA-N72		21.59 mm	Not Qualified	33554432 bit			.008 Amp	100 ns
THM322020S-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
THM3220C5BS-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		304 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE		R-PSMA-N72		17.78 mm	Not Qualified	67108864 bit			.004 Amp	70 ns
THM3251F5BSG70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		180 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE		R-PSMA-N72			Not Qualified	16777216 bit			.001 Amp	70 ns
THM364080AS-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2700 mA	4194304 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel	SINGLE		R-PSMA-N72		31.877 mm	Not Qualified	150994944 bit			.036 Amp	100 ns
THM324005BS-60	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		880 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE		R-PSMA-N72		22.86 mm	Not Qualified	134217728 bit			.008 Amp	60 ns
THM3251FOBS60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		205 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE		R-PSMA-N72			Not Qualified	16777216 bit			.001 Amp	60 ns
THM321020SG-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		100 ns
THM401020SG-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		40	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	1MX40	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	41943040 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		100 ns
THM3640A0S-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		4MX36	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		60 ns
THM325120ASG-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		16	MICROELECTRONIC ASSEMBLY					70 Cel		1MX16	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
THM362040AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		70 ns
THM321020S-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
THM3210B5BS-70	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		300 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE		R-PSMA-N72		17.78 mm	Not Qualified	33554432 bit			.002 Amp	70 ns
THM321000AS-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	33554432 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		80 ns
THM3610B0AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		330 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE		R-PSMA-N72		17.78 mm	Not Qualified	37748736 bit			.002 Amp	70 ns
THM362020SG-10	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		100 ns
THM402040SG-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	MOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		40	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	2MX40	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	83886080 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
THM3251FOBS70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		180 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE		R-PSMA-N72			Not Qualified	16777216 bit			.001 Amp	70 ns
THL32V1070ATG-7	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words			3.3		32	SMALL OUTLINE							1MX32	1M		DUAL	1	R-PDSO-G72			Not Qualified	33554432 bit				70 ns
THM3680A0S-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		8MX36	8M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	301989888 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		60 ns
THM3610B0ASG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		390 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE		R-PSMA-N72		17.78 mm	Not Qualified	37748736 bit			.002 Amp	60 ns
THM325120BSG-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		16	MICROELECTRONIC ASSEMBLY					70 Cel		1MX16	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
THM3640A0SG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		4MX36	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	150994944 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		70 ns
THM328025BS-60	Toshiba	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		896 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	SINGLE		R-PSMA-N72		25.4 mm	Not Qualified	268435456 bit			.016 Amp	60 ns
THL321010ATG-6L	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words					32	SMALL OUTLINE							1MX32	1M		DUAL	1	R-PDSO-G72			Not Qualified	33554432 bit				60 ns
THM3220C0ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		284 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE		R-PSMA-N72		17.78 mm	Not Qualified	67108864 bit			.004 Amp	70 ns
THL321010ATG-7	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1		GULL WING			1048576 words					32	SMALL OUTLINE							1MX32	1M		DUAL	1	R-PDSO-G72			Not Qualified	33554432 bit				70 ns
THL321010CTG-5	Toshiba	DRAM MODULE		72	SOP		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	GULL WING			1048576 words					32	SMALL OUTLINE							1MX32	1M		DUAL	1	R-PDSO-G72			Not Qualified	33554432 bit				50 ns
THM361070AS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		1MX36	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	37748736 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		60 ns
THM362060AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY					70 Cel		2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		70 ns
THM362020AS-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		70 ns
THM365120ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		18	MICROELECTRONIC ASSEMBLY					70 Cel		1MX18	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V		Not Qualified	18874368 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.